VSSA3L6S-M3 [VISHAY]
Trench MOS Schottky technology;
| 型号： | VSSA3L6S-M3 |
| 厂家： | 
VISHAY |
| 描述： | Trench MOS Schottky technology |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSSA3L6S-M3
Vishay General Semiconductor
www.vishay.com
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
TMBS®
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Not recommended for PCB bottom side wave mounting
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
3.0 A
60 V
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
80 A
VF at IF = 3.0 A
TJ max.
0.41 V
Base P/N-M3
- halogen-free, RoHS-compliant, and
150 °C
commercial grade
Package
DO-214AC (SMA)
Single die
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variations
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSA3L6S
UNIT
Device marking code
3L6
60
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF
3.0
2.5
Maximum DC forward current
(2)
IF
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
80
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1)
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB
Free air, mounted on recommended copper pad area
(2)
Revision: 05-Nov-13
Document Number: 89346
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA3L6S-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
TA = 25 °C
0.49
0.41
-
0.58
0.50
1500
30
(1)
Instantaneous forward voltage
IF = 3.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
(2)
Reverse current
VR = 60 V
IR
6.0
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
395
-
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
VSSA3L6S
UNIT
(1)
RJA
115
15
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance RJA - junction to ambient
Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB; RJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
VSSA3L6S-M3/61T
VSSA3L6S-M3/5AT
UNIT WEIGHT (g)
0.064
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.064
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
TM Measured at Terminal
D = tp/T
tp
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Average Forward Current (A)
0
25
50
75
100
125
150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 05-Nov-13
Document Number: 89346
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA3L6S-M3
Vishay General Semiconductor
www.vishay.com
100
10
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
10
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
100
10
Junction to Ambient
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
TA = 25 °C
1
0.01
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 05-Nov-13
Document Number: 89346
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16
Document Number: 91000
1
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