VSSC520S-M3-57T [VISHAY]
Surface Mount Trench MOS Barrier Schottky Rectifier; 表面贴装Trench MOS势垒肖特基整流器
| 型号： | VSSC520S-M3-57T |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
VSSC520S
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AB (SMC)
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
5.0 A
200 V
100 A
0.67 V
150 °C
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
- halogen-free and RoHS compliant,
VF at IF = 5.0 A
TJ max.
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
V5D
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
200
V
A
(1)
IF
5.0
Maximum DC forward current
(2)
IF
2.2
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
Notes
(1)
Units mounted on PCB with 25 mm x 25 mm copper pad areas, 1 oz. FR4 PCB
Free air, mounted on recommended PCB 1 oz. pad area
(2)
Document Number: 89318
Revision: 10-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
VSSC520S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
1.19
0.67
2.0
MAX.
1.70
0.75
-
UNIT
TA = 25 °C
(1)
Instantaneous forward voltage
IF = 5.0 A
VF
V
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 180 V
2.0
-
(2)
Reverse current per diode
Typical junction capacitance
IR
4
200
25
VR = 200 V
3.2
mA
pF
4.0 V, 1 MHz
CJ
280
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
UNIT
(1)
RJA
95
9
Typical thermal resistance
°C/W
(2)
RJM
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
Units mounted on PCB with 25 mm x 25 mm copper pad areas; thermal resistance RJM - junction to mount
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
VSSC520S-M3/57T
VSSC520S-M3/9AT
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
0.235
0.235
57T
9AT
850
7" diameter plastic tape and reel
13" diameter plastic tape and reel
3500
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
6
5
4
3
2
4.5
4
D = 0.5
D = 0.8
D = 0.3
D = 0.2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
D = 1.0
D = 0.1
T
1
TM Measured at Terminal
D = tp/T
tp
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
25
50
75
100
125
150
175
Average Forward Current (A)
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89318
Revision: 10-Nov-10
New Product
VSSC520S
Vishay General Semiconductor
100
10
1
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
100
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
10
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
100
1000
100
10
Junction to Ambient
10
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
0.01
0.001
0.0001
TA = 25 °C
1
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 89318
Revision: 10-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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VISHAY
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