ZTE4.7/TR [VISHAY]
Zener Diode, 4.7V V(Z), 6.4%, 0.3W,;
| 型号： | ZTE4.7/TR |
| 厂家： | 
VISHAY |
| 描述： | Zener Diode, 4.7V V(Z), 6.4%, 0.3W, 稳压器 二极管 齐纳二极管 |
| 文件： | 总4页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Voltage Stabilizers
DO-204AH (DO-35 Glass)
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
max.
.079 (2.0)
Cathode
Mark
Dimensions are in inches
and (millimeters)
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
max. .020 (0.52)
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Operating Current (see Table “Characteristics”)
Inverse Current
IF
Ptot
TJ
100
300(1)
mA
mW
°C
Power dissipation at Tamb = 25°C
Junction temperature
150
Storage temperature range
TS
–55 to +150
°C
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage at IF = 10 mA
VF
–
–
1.1
V
Temperature Coefficient of the
stabilized voltage at IZ = 5 mA
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
αVZ
αVZ
–
–
–26
–34
–
–
10–4/°C
10–4/°C
Thermal resistance junction to ambient air
RθJA
–
–
400(1)
°C/W
Document Number 88425
02-May-02
www.vishay.com
1
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TA = 25°C unless otherwise noted)
Operating Voltage
at IZ = 5mA(2)
VZ (Ω)
Dynamic resistance
Permissable operating current
at Tamb = 25°C(1)
at IZ = 5mA
Type
rzj (Ω)
IZ max. (mA)
ZTE1.5
ZTE2
1.35 ... 1.55
2.0 ... 2.3
2.2 ... 2.56
2.5 ... 2.9
2.8 ... 3.2
3.1 ... 3.5
3.4 ... 3.8
3.7 ... 4.1
4.0 ... 4.6
4.4 ... 5.0
4.8 ... 5.4
13(<20)
18(<30)
14(<20)
15(<20)
15(<20)
16(<20)
16(<25)
17(<25)
17(<25)
18(<25)
18(<25)
120
120
120
105
95
ZTE2.4
ZTE2.7
ZTE3
ZTE3.3
ZTE3.6
ZTE3.9
ZTE4.3
ZTE4.7
ZTE5.1
90
80
75
65
60
55
Notes: (1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case
(2) Tested with pulses tp = 5ms
www.vishay.com
2
Document Number 88425
02-May-02
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
ZTE1.5 ... 5.1
5.1
ZTE1.5
ZTE2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7
ZTE1.5 ... 5.1x
4.7 5.1
ZTE1.5
ZTE2 2.4 2.7
3 3.3 3.6 3.9 4.3
Document Number 88425
02-May-02
www.vishay.com
3
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
ZTE 1.5 ... 5.1
ZTE1.5 ... 5.1
ZTE
5.1
4.3
3.6
3
www.vishay.com
4
Document Number 88425
02-May-02
相关型号：
ZTE5.1-TAP
Zener Diode, 5.1V V(Z), 5.88%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2
VISHAY
ZTE5.1-TR
Zener Diode, 5.1V V(Z), 5.88%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2
VISHAY
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