7R64FLE230I25 [WEDC]
Flash Card, 44MX16, 150ns, CARD-68;
| 型号： | 7R64FLE230I25 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | Flash Card, 44MX16, 150ns, CARD-68 内存集成电路 |
| 文件： | 总13页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
PCMCIA Flash Memory Card
8MB Through 64 MB (AMD based)
FEATURES
ARCHITECTURE OVERVIEW
Very High Density Linear Flash Card
WEDC’s FLE series is designed to support up to twenty (see
Block diagram) 32Mb components, providing a wide range
of density options. Cards are based on the Am29F032
(32Mb) device for 5V only applications. The device code
for theAm29F032 is 41h and the manufacturer’s ID is 01h.
Systems should be able to recognize these codes. Cards
utilizing 32Mb components provide densities ranging from
8MB to 64MB in 8MB increments.
Supports 5V only systems
Based on AMD Flash Components
• Low standby power without entering reset mode
• Allows standard access from standby mode
Fast Read Performance
• 150ns Maximum Access Time
x8/ x16 Data Interface
In support of the PC Card (PCMCIA) standard for word
wide access, devices are paired. Therefore, the Flash
array is structured in 64K word blocks. Write, read and
block erase operations can be performed as either a
word or byte wide operation . By multiplexing A0, CE1#
and CE2#, 8-bit hosts can access all data on data lines
DQ0 - DQ7. The FLE series cards conform with the PC
Card Standard (formerly PCMCIA) and supported JEIDA,
providing electrical and physical compatibility. The PC
Card form factor offers an industry standard pinout and
mechanical outline, allowing density upgrades without
system design changes.
High Performance Random Writes
• 7μs Typical Word Write Time
Automated Write and Erase Algorithms
• AMD Command Set
1,000,000 Erase Cycles per Block
64K word (128kB) symmetrical Block Architecture
PC Card Standard Type I Form Factor
WEDC’s standard cards are shipped with WEDC’s
silkscreen design. Cards are also available with blank
housings (no silkscreen). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact your WEDC sales representative for further
information on Custom artwork.
GENERAL DESCRIPTION
WEDC’s PCMCIA Flash memory cards offer the highest
density, linear Flash solid state storage solutions for code
and data storage, high performance disk emulation and
execute in place (XIP) applications in mobile PC and
dedicated (embedded) equipment.
Packaged in a PCMCIAtype I housing, each card contains
a connector, an array of Flash memories packaged in
TSOP packages and card control logic. The card control
logic provides the system interface and controls the
internal Flash memories. Combined with file management
software, such as Flash Translation Layer (FTL), WEDC
Flash cards provide removable high-performance disk
emulation.
The WEDC FLE series is based onAMD Flash memories.
The FLE series offers byte wide and word wide operation,
low power modes and Card Information Structure (CIS)
for easy identification of card characteristics.
Note: Standard options include attribute memory. Cards without attribute memory are
available. Cards are also available with or without a hardware write protect switch.
August 2000
Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
FLE BLOCK DIAGRAM
Device type
Manuf ID
Device ID
Am29F032
01H
41H
CSn
Device Pair (N/2 - 1)
Device (N-1)
Device (N-2)
Array
Address
Bus
ADDRESS
ADDRESS BUS
A1-A25
BUFFER
Control
Address
Bus
M Res
WE#
OE#
WL#
RL#
WH#
Control Logic
PCMCIA Interface
CE2#
CE1#
RH#
Qn
CSn
Device Pair 1
REG#
A0
WP
Q2
Q0
Device 3
Device 1
Device 2
Device 0
CS1
CS0
CS0
At/Reg enable
Ctrl
Device Pair 0
Vcc
WL# RL#
WH# RH#
DATA
BUS
DATA
BUS
Vcc
0000h
attrib. mem
CIS
Q8-Q15
Q0-Q7
EEPROM 2kB
control
Q0-Q7
Vcc
I/O buffer
DATA
BUS
DATA
BUS
D8-D15
D0-D7
August 2000
Rev. 4
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
PINOUT
Pin
1
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
I/O
Function
Ground
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
I/O
Function
Ground
Active
2
I/O
Data bit 3
O
I/O
I/O
I/O
I/O
I
Card Detect 1
Data bit 11
LOW
3
I/O
Data bit 4
4
I/O
Data bit 5
Data bit 12
5
I/O
Data bit 6
Data bit 13
6
I/O
Data bit 7
Data bit 14
7
I
I
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
LOW
LOW
Data bit 15
8
I
Card Enable 2
Voltage Sense 1
Reserved
LOW
9
OE#
A11
I
O
N.C.
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
I
RFU
A9
I
RFU
Reserved
A8
I
A17
I
I
I
I
I
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
A13
I
A18
A14
I
A19
WE#
RDY/BSY#
Vcc
I
LOW
LOW
A20
O
A21
Vcc
Vpp1
A16
N.C.
Vpp2
A22
N.C.
I
8MB (3)
16MB (3)
32MB (3)
64MB (3)
N.C.
A15
I
A23
A12
I
A24
A7
I
A25
A6
I
VS2
O
I
A5
I
RST
HIGH
A4
I
I
Wait#
RFU
O
Extended Bus Cycle
Reserved
LOW (2)
A3
A2
I
REG#
BVD2
BVD1
DQ8
I
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
A1
I
O
(2)
(2)
A0
I
O
DQ0
DQ1
DQ2
WP
I/O
I/O
I/O
O
I/O
I/O
O
Data bit 1
DQ9
Data bit 9
Data bit 2
DQ10
CD2#
GND
Data bit 10
Write Potect
Ground
HIGH
O
Card Detect 2
Ground
LOW
GND
Notes:
1. RDY/BSY is an open drain output, external pull-up resistor is required.
2. Wait#, BVD1 and BVD2 are driven high for compatibility.
3. Shows density for which specified address bit is MSB. Higher order address bits are
no connects (i.e., 16MB A23 is MSB A24, A25 are NC).
August 2000
Rev. 4
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
PACKAGE DIMENSIONS
0.063
3.370
0.039
2.126
0.039
0.400
0.130
MAX.
August 2000
Rev. 4
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
CARD SIGNAL DESCRIPTION
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not
used in word access mode. A25 is the most significant bit
DQ0 - DQ15
CE1#, CE2#
INPUT/OUTPUT
INPUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0,
CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE: Active low signal gating read data from the memory card.
WRITE ENABLE: Active low signal gating write data to the memory card.
WE#
INPUT
RDY/BSY#
OUTPUT
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy
with internally timed erase or write activities.
CD1#, CD2#
WP
OUTPUT
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.
WRITE PROTECT: Write protect reflects the status of the Write Protect switch on the memory card. WP set to high
= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write
protect switch, this signal will be pulled low internally indicating write protect = “off”.
VPP1, VPP2
VCC
N.C.
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V only card.
CARD POWER SUPPLY: 5.0V for all internal circuitry.
GROUND: for all internal circuitry.
GND
REG#
INPUT
INPUT
ATTRIBUTE MEMORY SELECT: provides access to Flash memory card registers and Card Information Structure in
the Attribute Memory Plane.
RST
RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for
the memory array.
WAIT#
OUTPUT
OUTPUT
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No wait states are generated.
BVD1, BVD2
VS1, VS2
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.
VOLTAGE SENSE: Notifies the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V
card has been inserted.
RFU
N.C.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD: pin may be driven or left floating
August 2000
Rev. 4
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
Absolute Maximum Ratings2
Notes:
Operating Temperature TA (ambient)
1. During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for
periods less than 20ns.
Commercial
Industrial
0°C to +60 °C
2. Stress greater than those listed under “Absolute Maximum ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
at these or any other conditions greater than those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
-40°C to +85 °C**
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C**
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
Voltage on any pin relative to VSS
V
CC supply Voltage relative to VSS
DC CHARACTERISTICS (1)
Sym
Parameter
Density
Notes
Typ(4)
Max
Units
Test Conditions
(Mbytes)
ICCR
VCC Read Current
All
40(5)
75
mA
VCC = VCC MAX
tcycle = 150ns,CMOS levels
ICCW
ICCE
VCC Program Current
VCC Erase Current
VCC Standby Current
All
All
30(6)
30(6)
50
40(6)
40(6)
200
mA
mA
μA
ICCS
8MB
2,3
VCC = VCC MAX
(CMOS)
Control Signals = VCC
Reset = VSS, CMOS levels
64MB
100
400
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. ICCS is specified for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.
4. Typical: VCC = 5V, T = +25°C.
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
μA
VCC = VCC MAX
VIN =VCC or VSS
ILO
Output Leakage Current
1
±20
μA
VCC = VCC MAX
VOUT =VCC or VSS
VIL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
1
1
1
0
0.8
VCC+0.5
0.4
V
V
V
V
V
VIH
0.7 VCC
VOL
VOH
VLKO
IOL = 3.2mA
IOH = -2.0mA
VCC-0.4
3.25
VCC
VCC Erase/Program
Lock Voltage
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to internal pull-up resistors.
Leakage currents on RST will be <150μA when VIN=VCC due to internal pull-down resistor.
August 2000
Rev. 4
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
AC CHARACTERISTICS
Read Timing Parameters
150ns
SYM (PCMCIA)
tRC
Parameter
Min
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
150
ta(A)
Address Access Time
Card Enable Access Time
Output Enable Access Time
Address Setup Time
Card Enable Setup Time
Address Hold Time
150
150
75
ta(CE)
ta(OE)
tsu(A)
20
0
tsu(CE)
th(A)
20
20
th(CE)
tv(A)
Card Enable Hold Time
Output Hold from Address Change
Output Disable Time from CE#
Output Disable Time from OE#
Output Enable Time from CE#
Output Enable Time from OE#
0
tdis(CE)
tdis(OE)
ten(CE)
ten(CE)
75
75
5
5
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Read Timing Diagram
tc(R)
th(A)
ta(A)
A[25::0], REG#
CE1#, CE2#
tv(A)
ta(CE)
tsu(CE)
NOTE 1
NOTE 1
th(CE)
ta(OE)
tsu(A)
tdis(CE)
OE#
tdis(OE)
ten(OE)
D[15::0]
DATA VALID
Note: Signal may be high or low in this area.
August 2000
Rev. 4
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
AC CHARACTERISTICS
Write Timing Parameters
150ns
SYM (PCMCIA)
tCW
Parameter
Min
150
80
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
tw(WE)
Write Pulse Width
Address Setup Time
Address Setup Time for WE#
tsu(A)
20
tsu(A-WEH)
tsu(CE-WEH)
tsu(D-WEH)
th(D)
100
Card Enable Setup Time for WE#
Data Setup Time for WE#
Data Hold Time
100
50
20
trec(WE)
tdis(WE)
tdis(OE)
Write Recover Time
20
Output Disable Time from WE#
Output Disable Time from OE#
Output Enable Time from WE#
Output Enable Time from OE#
Output Enable Setup from WE#
Output Enable Hold from WE#
Card Enable Setup Time from OE#
Card Enable Hold Time
75
75
ten(WE)
5
5
ten(OE)
tsu(OE-WE)
th(OE-WE)
tsu(CE)
10
10
0
th(CE)
20
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Write Timing Diagram
tc(W)
A [25::0], REG#
tsu(A-WEH)
trec(WE)
th(CE)
tsu(CE-WEH)
tsu(CE)
CE1#, CE2#
OE#
NOTE 1
NOTE 1
th(OE-WE)
th(D)
tw(WE)
tsu(A)
WE#
tsu(OE-WE)
NOTE 2
tsu(D-WEH)
D[15::0](Din)
DATA INPUT
tdis(WE)
tdis(OE)
ten(OE)
ten(WE)
NOTE 2
D[15::0](Dout)
Note:
1. Signal may be high or low in this area.
2. When the data I/O pins are in the output state, no signals shall be
applied to the data pins (D15 -D0) by the host system.
August 2000
Rev. 4
8
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
DATA WRITE AND ERASE PERFORMANCE (1, 3)
VCC = 5V ± 5%, 0°C ≤ TA ≤ 60°C
SYM
Parameter
Notes
2,4
Min
Typ(1)
7
Max
300
Units
Test Conditions
tWHQV1
tEHQV1
Word/Byte Program time
μs
Excludes system-level overhead
tWHQV2
tEHQV2
Block Program Time
Block Erase Time
2
2
0.5
1
2.0
8
sec
sec
Excludes 00h prog. prior to erasure
Notes:
1. Typical: Nominal voltages and TA = 25°C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance, RDY/BSY# signal or component status register should be polled.
August 2000
Rev. 4
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
PRODUCT MARKING
WED 7P016FLE2200C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/
acronym (EDI). During our transition period, some products will also be marked
with our new company name/acronym (WED). Starting October 2001 all
PCMCIA products will be marked only with the WED prefix.
PRODUCT NUMBERING
7 P 016 FLE22 00 C 20
Card access time
15
25
150ns
250ns
Temperature range
C
I
Commercial
Industrial
0°C to +70°C
-40°C to +85°C
Packaging option
00 Standard, type 1
Card family and version
– See Card Family and Version Info. for
details (next page)
Card capacity
016 16MB
PC card
P
R
Standard PCMCIA
Ruggedized PCMCIA
Card technology
7
8
FLASH
SRAM
August 2000
Rev. 4
10
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
ORDERING INFORMATION
EDI7P XXX FLE 22 SS T ZZ
Based on AM29F032 for 5V only applications
where
XXX: 008
016
8MB
16MB
24MB
32MB
40MB
48MB
56MB
64MB
024
032
040
048
056
064
SS:
00
01
02
WEDC Silkscreen
Blank Housing, Type I
Blank Housing, Type I Recessed
T:
C
I
Commercial
Industrial
ZZ:
15
150ns
Note: Options without attribute memory and with hardware write protect switch are available.
Card families:
FLE 21
FLE 22
FLE 23
FLE 24
- No Attribute memory, No WP switch
- With Attribute Memory, No WP switch
- No Attribute Memory, With WP switch
- With Attribute Memory, With WP switch
August 2000
Rev. 4
11
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
CIS INFORMATION FOR FLE SERIES CARDS
CIS for FLE22, 150ns
Address Value Description
Address Value Description
Address Value
Description
00H
02H
04H
06H
01H CISTPL_DEVICE
03H TPL_LINK
53H writable)
1EH CARD SIZE: 8MB
3EH 16MB
5EH 24MB
7EH 32MB
9EH 40MB
BEH 48MB
DEH 56MB
40H
42H
44H
46H
48H
4AH
4CH
4EH
50H
52H
54H
56H
58H
5AH
5CH
5EH
60H
62H
64H
66H
68H
6AH
6CH
6EH
70H
72H
74H
76H
78H
7AH
7CH
7EH
80H
82H
84H
86H
88H
8AH
8CH
8EH
90H
92H
45H
44H
49H
37H
50H
30H
1)
E
D
I
7
P
0
x
x
F
L
E
2
x
-
-
-
94H
96H
98H
9AH
9CH
9EH
A0H
A2H
A4H
A6H
A8H
AAH
ACH
AEH
B0H
B2H
B4H
B6H
B8H
BAH
BCH
BEH
C0H
C2H
C4H
C6H
C8H
45H
53H
49H
47H
4EH
53H
20H
49H
4EH
43H
4FH
52H
50H
4FH
52H
41H
54H
45H
44H
20H
00H
31H
39H
39H
39H
00H
00H
E
S
I
G
N
S
SPACE
I
N
C
O
R
P
O
R
A
T
E
1)
46H
4CH
45H
32H
2)
FEH 64MB
08H
0AH
0CH
0EH
10H
12H
14H
16H
18H
1AH
1CH
1EH
20H
22H
24H
26H
28H
2AH
FFH END OF DEVICE
18H CISTPL_JEDEC_C
02H TPL_LINK
01H AMD - ID
41H 29F032 - ID
2DH
2DH
2DH
31H
35H
20H
00H
43H
4FH
50H
59H
52H
49H
47H
48H
54H
20H
45H
4CH
45E
43H
54H
52H
4FH
4EH
49H
43H
20H
44H
17H CISTPL_DEVICE_A
03H TPL_LINK
1
5
42H EEPROM - 200ns
01H Device Size = 2KBytes
FFH END OF TUPLE
1EH CISTPL_DEVICEGEO
06H TPL_LINK
SPACE
END TEXT
D
SPACE
END TEXT
C
O
P
Y
R
I
G
H
1
9
9
9
02H DGTPL_BUS
11H DGTPL_EBS
01H DGTPL_RBS
01H DGTPL_WBS
01H DGTPL_PART
01H FLASH DEVICE
NON-INTERLEAVED
20H CISTPL_MANFID
04H TPL_LINK(04H)
F6H EDITPLMID_MANF: LSB
01H EDI PLMID_MANF: MSB
00H LSB: Number Not Assign.
00H MSB: Number Not Assign.
15H CISTPL_VERS1
47H TPL_LINK
END TEXT
END OF LIST
T
1)
SPACE
E
L
E
C
T
R
O
Address Value Description
2CH
2EH
30H
32H
34H
36H
38H
3AH
3CH
3EH
4CH
30
31
32
33
34
36
0
1
2
3
4
6
4EH
58H
30
32
34
36
38
0
2
4
6
8
N
I
C
04H TPLLV1_MAJOR
01H TPLLV1_MINOR
2)
SPACE
D
32
34
2
4
August 2000
Rev. 4
12
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PCMCIA Flash Memory Card
FLE Series
White Electronic Designs
Document Title
PCMCIA FLASH MEMORY CARD — FLE SERIES
8MB Through 64 MB (AMD based)
Revision History
Rev #
History
Release Date Status
Rev 1
Rev 2
Rev 3
Rev 4
Initial release
2-7-98
5-27-99
5-31-00
8-1-00
Logo change
Added page 9, heading change on all pages
Corrected timing errors, pages 6 and 7
August 2000
Rev. 4
13
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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