8R256SRV0100C15 [WEDC]
SRAM Card, 16MX16, 150ns, CMOS, CARD-68;
| 型号： | 8R256SRV0100C15 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | SRAM Card, 16MX16, 150ns, CMOS, CARD-68 静态存储器 |
| 文件： | 总11页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRV01-SRV04
White Electronic Designs
PCMCIA SRAM MEMORY CARD — SRV SERIES
SRAM Memory Card 256KB Through 8MB
FEATURES
GENERAL DESCRIPTION
High Performance SRAM memory Card
The WEDC SRAM Series (SRV) memory cards offer a
high performance nonvolatile storage solution for code
and data storage, disk caching, and write intensive mobile
and embedded applications.
Universal 3.3 to 5 Volt Supply allows for wider
compatibility between systems.
Fast Access times: 150ns @ 5V
250ns @ 3.3V
Packaged in PCMCIA type I or type II housing (type II for
cards with extended battery backup time and 8MB cards),
the WEDC SRAM SRV series is based on 1 or 4Mbit
SRAM memories, providing densities from 256 Kilobytes
to 8 Megabytes.
x8/x16 PCMCIA standard interface
Low Power CMOS technology provides very low
power and reliable data retention characteristics
• Standby current < 100μA typical
The SRV series of SRAM memory cards is a universal
3V/ 5V power supply and operates at speeds as high
as 150ns. The cards are based on advanced CMOS
technology providing very low power and reliable data
retention characteristics. WEDC’s SRAM cards contain
a rechargeable lithium battery and recharge circuitry,
eliminating the need for replaceable batteries found in
many SRAM cards.
Rechargeable Lithium battery with recharge
circuitry
• eliminates the need for replaceable batteries
• standby current during recharge typically < 2mA
• battery backup time
– 7 months - type I card
WEDC’s standard cards are shipped with WEDC’s SRAM
Logo. Cards are also available with blank housings
(no Logo). The blank housings are available in both a
recessed (for label) and flat housing. Please contact
WEDC sales representative for further information on
Custom artwork.
– 18 months - type II card
typical based on 4MB (lower
densities will have greater storage
times)
Unlimited write cycles, no endurance issues
Optional Features:
• 2KB EEPROM attribute memory containing CIS
• Optional Hardware Write Protect switch
PC Card Standard Type I or Type II Form Factor
February 2007
Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
BLOCK DIAGRAM
4MB SRAM Card Shown
[A1..A19]
address
buffer
SRAM
512K x 8
SRAM
512K x 8
SRAM
SRAM
[A20..A22]
512K x 8
512K x 8
CSHi#
CSLi#
SRAM
512K x 8
SRAM
512K x 8
+
+
+ +
+
decoder
and
CE1#
CE2#
WE#
OE#
REG#
A0
CSHi#
SRAM
512K x 8
control
logic
SRAM
512K x 8
CS-A#
RD#
RD#
WR#
WR#
CTRL
[A1..A11]
CS-A#
RD#
S1
ATTRIBUTE
MEMORY
Vcc
WP
WR#
Write Prot
Switch
VS1
VS2
GND
NC
NC
CTRL
I/O BUFFER
[DO..D7]
[DO..D7]
[D8..D15]
+
[D8..D15]
Vcc
Notes: 1. pull down resistor (min 100k)
2. pull up resistor (min 10k)
Power Management
and
BVD1
BVD2
to internal
Battery Control
+
power
supply
Lithium Bat.
February 2007
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
PINOUT
Pin
1
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
I/O
Function
Ground
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
I/O
Function
Ground
Active
2
I/O
Data bit 3
O
I/O
I/O
I/O
I/O
I
Card Detect 1
Data bit 11
LOW
3
I/O
Data bit 4
4
I/O
Data bit 5
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
5
I/O
Data bit 6
6
I/O
Data bit 7
7
I
I
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
LOW
LOW
8
I
LOW
N.C.
9
I
O
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
I
N.C.
A9
I
N.C.
A8
I
A17
I
I
I
I
I
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
Address bit 22
N.C.
256KB(2)
512KB(2)
1MB(2)
A13
A14
WE#
RDY/BSY#
Vcc
I
A18
I
A19
I
LOW
N.C.
A20
2MB(2)
O
A21
4MB(2)
Vcc
Vppl
A16
A15
A12
A7
N.C.
Vpp2
A22
N.C.
I
8MB(2,4)
I
A23
I
A24
N.C.
I
A25
N.C.
A6
I
VS2
O
O
Voltage Sense 2
N.C.
Low
Low
(3)
A5
I
N.C.
A4
I
I
Wait#
N.C.
Extended Bus Cycle
A3
A2
I
REG#
BVD2
BVD1
DQ8
I
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
A1
I
O
A0
I
O
DQ0
DQ1
DQ2
WP
I/O
I/O
I/O
O
I/O
I/O
O
Data bit 1
DQ9
Data bit 9
Data bit 2
DQ10
CD2#
GND
Data bit 10
Write Potect
Ground
HIGH
O
Card Detect 2
Ground
LOW
GND
Notes:
1. CD1# and CD2# are grounded internal to PC Card.
2. Shows density for which specified address bit is MSB. Higher order address bits are
no connects (i.e., 1MB A19 is MSB, A20 - A21 are NC).
3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor.
4. Address bit 22 is used for the 8MB cards as well as the 6MB Cards.
February 2007
Rev. 2
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
PACKAGE DIMENSIONS
Type I
Interconnect area
3.0mm MIN
10.0mm MIN
1.6mm
(0.400”)
0.05
1.0mm 0.05
(0.039”)
(0.063”)
Substrate area
54.0mm 0.10
(2.126”)
85.6mm 0.20
(3.370”)
1.0mm 0.05
(0.039”)
10.0mm MIN
(0.400”)
3.3mm T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
Type II
1.6mm
85.6mm 0.20
(3.370”)
3.0mm MIN
0.05
(0.063”)
1.0mm 0.05
(0.039”)
Substrate area
54.0mm 0.10
(2.126”)
1.0mm 0.05
(0.039”)
10.0mm MIN
0.400”
Interconnect area
5.0mm T1
(0.197”)
February 2007
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
CARD SIGNAL DESCRIPTION
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not
used in word access mode. A25 is the most significant bit. (address pins used are based on card density,see pinout
for highest used address pin)
DQ0 - DQ15
CE1#, CE2#
INPUT/OUTPUT
INPUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ0 - DQ7 constitute the lower
(even) byte and DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0,
CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE: Active low signal enabling read data from the memory card.
WRITE ENABLE: Active low signal gating write data to the memory card.
READY/BUSY OUTPUT: Not used for SRAM cards
WE#
INPUT
RDY/BSY#
CD1#, CD2#
OUTPUT
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.
WP
OUTPUT
N.C.
WRITE PROTECT: Follows hardware Write Protect Switch. When Switch is placed in on position, signal is pulled high
(10K ohm). When switch is off signal is pulled low.
VPP1, VPP2
VCC
PROGRAM/ERASE POWER SUPPLY: Not used for SRAM cards.
CARD POWER SUPPLY: 5.0V for all internal circuitry.
GND
GROUND: for all internal circuitry.
REG#
INPUT
ATTRIBUTE MEMORY SELECT: only used with cards built with optional attribute memory.
RESET: Not used for SRAM cards
RST
INPUT
WAIT#
BVD1, BVD2
OUTPUT
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No wait states are generated.
BATTERY VOLTAGE DETECT: Provides status of Battery voltage.
BVD2 = BVD1 = VOH (battery voltage is guaranteed to retain data)
BVD2 = VOL, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = VOL (data may no longer be valid, battery requires extended recharge)
VS1, VS2
OUTPUT
VOLTAGE SENSE: Notifies the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V,
16 bit card has been inserted.
RFU
N.C.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD: pin may be driven or left floating
SRAM FUNCTIONAL TRUTH TABLE
READ function
Function Mode
Standby Mode
Common Memory
D15-D8
Attribute Memory
D15-D8
CE2# CE1# A0 OE# WE#
REG#
D7-D0
High-Z
REG#
D7-D0
High-Z
H
H
H
L
H
L
X
L
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z
X
L
L
L
L
High-Z
Byte Access (8 bits)
High-Z
Even-Byte
Odd-Byte
Even-Byte
High-Z
High-Z
Even-Byte
Not Valid
Even-Byte
High-Z
L
H
X
X
High-Z
High-Z
Word Access (16 bits)
Odd-Byte Only Access
L
Odd-Byte
Odd-Byte
Not Valid
Not Valid
L
H
WRITE function
Standby Mode
H
H
H
H
L
L
X
L
X
H
H
X
L
L
X
H
H
X
X
X
X
X
L
L
X
X
X
X
Even-Byte
X
Byte Access (8 bits)
Even-Byte
Odd-Byte
H
February 2007
Rev. 2
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
Absolute Maximum Ratings2
Notes:
Operating Temperature TA (ambient)
1. During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for
periods less than 20ns.
Commercial
Industrial
0°C to +60 °C
2. Stress greater than those listed under “Absolute Maximum ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
at these or any other conditions greater than those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
-40°C to +85 °C
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
Voltage on any pin relative to VSS
V
CC supply Voltage relative to VSS
DC CHARACTERISTICS1
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Sym
ICC
Parameter
VCC Active Current
Density
64KB
Notes
1
Min
Typ(3)
90
90
90
90
Max
180
180
180
180
190
10
Units
mA
Test Conditions
VCC = 5.25V
tcycle = 150ns
128KB
256KB
512KB
1MB to 8MB
All
110
< 1
ICCS
ILI
VCC Standby Current
Input Leakage Current
Output Leakage Current
2,4
5,6
6
< 0.1
mA
μA
μA
VCC = 5.25V
Control Signals = VCC
VCC = VCC MAX
VIN =VCC or VSS
VCC = VCC MAX
All
All
±20
±20
ILO
VOUT =VCC or VSS
VIL
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
All
All
All
All
6
6
6
6
0
3.85
0.8
VCC +0.5
0.4
V
V
V
V
VIH
VOL
VOH
IOL = 3.2mA
IOH = -2.0mA
VCC- 0.4
VCC
Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully charged battery.
CCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
I
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to internal pull-up resistors
BATTERY CHARACTERISTICS
SRA11-14
SRA01-04
Type I Type II
Parameter
Battery Life
Density
All
256KB
512KB, 1MB
2MB
Notes
(1)
(2)
Type I
Units
years
Conditions
Normal operation, T=25C
T=25C
Battery backup time is a calculated value and is not
guaranteed. This should not be used to schedule battery
recharging.
min 10
-
min 10
24
18
12
7
7
-
60
45
30
17
17
12
32
22
12
12
-
Battery
Backup Time
months
(typical)
4MB
6MB
8MB
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
February 2007
Rev. 2
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
AC CHARACTERISTICS
Read Timing Parameters
5.0V
3.3V
SYM (PCMCIA)
tRC
Parameter
Min
Max
Min
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
150
250
ta(A)
Address Access Time
150
150
75
250
250
125
ta(CE)
ta(OE)
tsu(A)
Card Enable Access Time
Output Enable Access Time
Address Setup Time
20
0
30
0
tsu(CE)
th(A)
Card Enable Setup Time
Address Hold Time
20
20
0
20
20
0
th(CE)
tv(A)
Card Enable Hold Time
Output Hold from Address Change
Output Disable Time from CE#
Output Disable Time from OE#
Output Enable Time from CE#
Output Enable Time from OE#
tdis(CE)
tdis(OE)
75
75
100
100
t
dis(CE)
5
5
5
5
tdis(CE)
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Read Timing Diagram
tc(R)
ta(A)
th(A)
A[25::0], REG#
tv(A)
ta(CE)
tsu(CE)
CE1#, CE2#
NOTE 1
NOTE 1
th(CE)
ta(OE)
tsu(A)
tdis(CE)
OE#
tdis(OE)
ten(OE)
D[15::0]
DATA VALID
Note: Signal may be high or low in this area.
February 2007
Rev. 2
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
AC CHARACTERISTICS
Write Timing Parameters
5.0V
3.3V
SYM (PCMCIA)
tCW
Parameter
Min
150
80
Max
Min
250
150
30
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
tw(WE)
Write Pulse Width
tsu(A)
Address Setup Time
20
tsu(A-WEH)
tsu(CE-WEH)
tsu(D-WEH)
th(D)
Address Setup Time for WE#
Card Enable Setup Time for WE#
Data Setup Time for WE#
Data Hold Time
100
100
50
180
180
80
20
30
trec(WE)
tdis(WE)
tdis(OE)
Write Recover Time
20
30
Output Disable Time from WE#
Output Disable Time from OE#
Output Enable Time from WE#
Output Enable Time from OE#
Output Enable Setup from WE#
Output Enable Hold from WE#
Card Enable Setup Time from OE#
Card Enable Hold Time
75
75
100
100
ten(WE)
5
5
5
5
tdis(OE)
tsu(OE-WE)
th(OE-WE)
tsu(CE)
10
10
0
10
10
0
th(CE)
20
20
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Write Timing Diagram
tc(W)
A [25::0], REG#
tsu(A-WEH)
trec(WE)
tsu(CE-WEH)
th(CE)
tsu(CE)
CE1#, CE2#
NOTE 1
NOTE 1
OE#
th(OE-WE)
th(D)
tw(WE)
tsu(A)
WE#
tsu(OE-WE)
NOTE 2
tsu(D-WEH)
D[15::0](Din)
DATA INPUT
tdis(WE)
tdis(OE)
ten(OE)
ten(WE)
NOTE 2
D[15::0](Dout)
Note:
1. Signal may be high or low in this area.
2. When the data I/O pins are in the output state, no signals shall be
applied to the data pins (D15 -D0) by the host system.
February 2007
Rev. 2
8
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
PRODUCT MARKING
WED 8P512SRV0100C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/
acronym (EDI). During our transition period, some products will also be marked
with our new company name/acronym (WED). Starting October 2001 all
PCMCIA products will be marked only with the WED prefix.
PRODUCT NUMBERING
8 P 512 SRV01 00 C 15
Card access time
15
25
150ns
250ns
Temperature range
C
I
Commercial
Industrial
0°C to +70°C
-40°C to +85°C
Packaging option
00 Standard, type 1
Card family and version
– See Card Family and Version Info. for
details (next page)
Card capacity
512 512KB
PC card
P
R
Standard PCMCIA
Ruggedized PCMCIA
Card technology
7
8
FLASH
SRAM
February 2007
Rev. 2
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
ORDERING INFORMATION
8P XXX SRV YY SS T ZZ
where
XXX: 256* 256KB
512* 512KB
001
002
004
006
1MB
2MB
4MB
6MB
008* 8MB
*= Capacities available only in SRV01-SRV04
YY:
01
02
03
04
no attribute memory, no Write Protect Switch
with attribute memory, no Write Protect Switch
with Write Protect Switch, no attribute memory
with attribute memory, with Write Protect Switch
11
12
13
14
Extended Battery Backup Time, no attribute memory, no Write Protect Switch
Extended Battery Backup Time, with attribute memory, no Write Protect Switch
Extended Battery Backup Time, with Write Protect Switch, no attribute memory
Extended Battery Backup Time, with attribute memory, with Write Protect Switch
SS:
00
01
02
03
04
05
WEDC SRAM Logo Type I
Blank Housing,
Blank Housing,
Type I
Type I Recessed
WEDC SRAM Logo, Type II
(8MB and extended battery backup time)
(8MB and extended battery backup time)
(8MB and extended battery backup time)
Blank Housing,
Blank Housing,
Type II
Type II Recessed
T:
C
I
Commercial
Industrial
ZZ:
15
150ns
February 2007
Rev. 2
10
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
SRV01-SRV04
White Electronic Designs
Document Title
PCMCIA SRAM Memory Card — SRV Series
SRAM Memory Card 256KB through 8MB
Revision History
Rev #
History
Release Date Status
Rev 0
Rev 1
Initial release
9-27-99
1.0 Added page 8, added SRV11-14 to page 9, changed page 6-2-00
header
Rev 2
2.0 Updated data sheet title from "Flash Memory Card" to
"SRAM Memory Card"
February 2007
Final
February 2007
Rev. 2
11
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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