EDI8F32512C [WEDC]

512Kx32 Static RAM CMOS, High Speed Module; 512Kx32静态RAM CMOS ，高速模块


型号：	EDI8F32512C
厂家：	WHITE ELECTRONIC DESIGNS CORPORATION
描述：	512Kx32 Static RAM CMOS, High Speed Module 512Kx32静态RAM CMOS ，高速模块
文件：	总8页 (文件大小：103K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EDI8F32512C

512Kx32 Static RAM CMOS, High Speed Module

FEATURES

DESCRIPTION

ꢀ

512Kx32 bit CMOS Static

Random Access Memory

The EDI8F32512C is a high speed 16 megabit Static RAM

module organized as 512K words by 32 bits. This module is

constructed from four 512Kx8 Static RAMs in SOJ packages

on an epoxy laminate (FR4) board.

ꢀ

Access Times: 15, 20, and 25ns

Individual Byte Selects

Fully Static, No Clocks

TTL Compatible I/O

Four chip enables (EØ-E3) are used to independently

enable the four bytes. Reading or writing can be executed on

individual bytes or any combination of multiple bytes through

proper use of selects.

ꢀ

High Density Package

The EDI8F32512C is offered in 72 pin ZIP and 72 lead SIMM

packages, which enable 16 megabits of memory to be placed

in less than 1.3 square inches of board space.

ꢀ

72 Pin ZIP, No. 173

72 lead SIMM, No. 174 (Gold Option)

Common Data Inputs and Outputs

All inputs and outputs are TTL compatible and operate from

a single 5V supply. Fully asynchronous circuitry requires no

clocks or refreshing for operation and provides equal access

and cycle times for ease of use.

Single +5V ( 10ꢀ) Supply Operation

Note: Consult factory for availability of:

• RoHS compliant products

Pins PD1- PD4, are used to identify module memory density in

applications where alternate modules can be interchanged.

• Vendor source control options

• Industrial temperature option

FIG. 1

Pin Names

A0-A18

E0#-E3#

Address Inputs

Chip Enables

Write Enable

Output Enable

Pin Conﬁgurations and Block Diagram

PD2

V^SS

PD1

DQ8

DQ9

DQ10

DQ11

PD3

PD0

DQ0

DQ1

DQ2

DQ3

V^CC

DQ4

DQ5

DQ6

DQ7

DQ0-DQ31

Common Data

Input/Output

V_CC

V_SS

Power (+5V 10ꢀ%

Ground

No Connectiona

DQ12

DQ13

DQ14

DQ15

V^SS

A0-A18

A15

E1#

A14

E0#

512K

E3#

A17

DQ24

DQ25

DQ26

DQ27

V^CC

DQ28

DQ29

DQ30

DQ31

A18

E2# 38

A16 40

V^SS

DQ16 44

DQ17 46

DQ18 48

DQ19 50

A10 52

A11 54

A12 56

A13 58

DQ20 60

DQ21 62

DQ22 64

DQ23 66

DQ0-DQ7

E0#

512K

DQ8-DQ15

DQ16-DQ23

DQ24-DQ31

E1#

E2#

512K

V^SS

NC 70

NC 72

512K

PD0, PD1, PD3= OPEN

PD2= VSS

E3#

8G32512C Pin Config.

8G32512C Blk Dia.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

ABSOLUTE MAXIMUM RATINGS*

RECOMMENDED DC OPERATING

CONDITIONS

Voltage on any pin relative to V_SS

Operating Temperature TA (Ambient%

Commercial

Industrial

Storage Temperature, Plastic

Power Dissipation

-0.5V to 7.0V

Parameter

Sym

V_CC

V_SS

V_IH

Min

4.5

2.2

-0.3

Typ

5.0

Max

5.5

6.0

0.8

Units

0°C to +70°C

-40°C to +85°C

-55°C to +125°C

5.0 Watts

Supply Voltage

Input High Voltage

Input Low Voltage

V_IL

Output Current

20 mA

*Stress greater than those listed under "Absolute Maximum Ratings" may cause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions greater than those indicated in the

operational sections of this speciﬁcation is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect reliability.

AC TEST CONDITIONS

Input Pulse Levels

Input Rise and Fall Times

Input and Output Timing Levels

Output Load

V_SSto 3.0V

5ns

1.5V

1TTL, CL = 30pF

(Note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF%

DC ELECTRICAL CHARACTERISTICS

Parameter

Sym

_CC1

I_CC

Conditions

W#, E# = V_IL, II/O = 0mA, Min Cycle

Min

Typ*

Max

800

300

Units

Operating Power Supply Current

Standby (TTL% Power Supply Current

Full Standby Power Supply Current

CMOS

E > V_IH, V_IN> V_ILor V_IN> V_IH

E > V_CC-0.2V

V_IN> V_CC=0.2V or V_IN> 0.2V

I_LI

I_LO

V_OH

V_OL

V_IN= 0V to V_CC

V I/O = 0V TO V_CC

I_OH= -4.0mA

2.4

µA

Input Leakage Current

Output Leakage Current

Output High Voltage

I_OL= 8.0mA

0.4

Output Low Voltage

*Typical: TA = 25°C, VCC = 5.0V

CAPACITANCE

(f=1.0MHz, VIN=VCC or VSS%

TRUTH TABLE

Parameter

Address Lines

Data Lines

Chip Enable Line

Write Line

Sym

CD/Q

Max

Unit

Mode

Standby

Read

Write

Output

Deselect

Output

HIGH Z

D_OUT

D_IN

HIGH Z

Power

I_CC2/I_CC

I_CC1

These parameters are sampled, not 100ꢀ tested.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

AC CHARACTERISTICS READ CYCLE

Symbol

15ns

20ns

25ns

Units

Parameter

JEDEC

t_AVAV

Alt.

TRA

TAA

TACS

TCLZ

TCHZ

TOH

TOE

TOLZ

TOHZ

Min

Max

Min

Max

Min

Max

Read Cycle Time

Address Access Time

Chip Enable Access

t_AVQV

t_ELQV

t_ELQX

t_EHQZ

t_AVQX

t_GLQV

t_GLQX

t_GHQZ

Chip Enable to Output in Low Z (1%

Chip Disable to Output in High Z (1%

Output Hold from Address Change

Output Enable to Output Valid

Output Enable to Output in Low Z (1%

Output Disable to Output in High (1%

620

Notes: 1. Parameter guaranteed, but not tested.

FIG. 2

READ CYCLE 1 - W# HIGH, G#, E# LOW

tAVAV

tELWH

tWHAX

tAVWH

tWLWH

tAVWL

DVWH

tWHDX

DATA VALID

tWHQX

tWLQZ

HIGH Z

8F32512C Write Cyc1

FIG. 3

READ CYCLE 2 - W# HIGH

tAVAV

tAVQV

tELQV

tEHQZ

tELQX

GLQV

GLQX

tGHQZ

8F32512C Rd Cyc2

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

AC CHARACTERISTICS WRITE CYCLE

Symbol

15ns

20ns

25ns

Units

Parameter

JEDEC

Alt.

Min

Max

Min

Max

Min

Max

Write Cycle Time

t_AVAV

TWC

Chip Enable to End of Write

t_ELWH

t_WLEH

t_AVWL

t_AVEL

t_AVWH

t_AHEH

t_WLWH

t_ELEH

t_WHAX

t_EHAX

t_WHDX

t_EHDX

TCW

Address Setup Time

Address Valid to End of Write

Write Pulse Width

TAS

TAW

TWP

TWR

Write Recovery Time

Data Hold Time

TDH

Write to Output in High Z (1%

Data to Write Time

t_WLQZ

t_DVWH

t_DVEH

TWHZ

TDW

Output Active from End of Write (1%

t_WHQX

TWLZ

Notes: 1. Parameter guaranteed, but not tested.

FIG. 4

WRITE CYCLE 1 - W# CONTROLLED

tAVAV

tELWH

tWHAX

tWHDX

tAVWH

tWLWH

tAVWL

tDVWH

DATA VALID

tWHQX

tWLQZ

HIGH Z

8F32512C Write Cyc1

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

FIG. 5

WRITE CYCLE 2 - E# CONTROLLED

tAVAV

tAVEL

tELEH

tAVEH

tEHAX

tWLEH

tDVEH

tEHDX

DATA VALID

HIGH Z

8F32512C Write Cyc2

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

ORDERING INFORMATION

Part Number

Speed

(ns)

Package

No.

Part Number

Speed

(ns)

Package

No.

EDI8F32512C15MMC

EDI8F32512C20MMC

EDI8F32512C25MMC

NOTES:

174

EDI8F32512C15MZC

EDI8F32512C20MZC

EDI8F32512C25MZC

173

• Consult Factory for availability of RoHS compliant products. (indicated with "G" at the end of the part number%

• Vendor speciﬁc part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to

be replaced with the respective vendors code. Consult factory for qualiﬁed sourcing options. (M = Micron, S = Samsung & consult factory for others%

• Consult factory for availability of industrial temperature (-40°C to 85°C% option

• To order gold SIMM option, change from "EDI8F" to "EDI8G".

PACKAGE DESCRPTION

PACKAGE NO. 173: 72 PIN ZIP

3.865 MAX.

.032

0.600

MAX.

.032

.100

TYP.

.060

MAX.

.022

.018

.100 TYP.

.050 TYP.

.273

MAX.

PACKAGE NO. 174: 72 LEAD SIMM

.125 DIA. TYP.

(2 PLCS.)

4.255 MAX.

3.984

.213

MAX.

1.992

.625 MAX.

.250

.050 TYP.

2.045

.250

.400

.125

MIN.

R.062

3.730

ALL DIMENSIONS ARE IN INCHES

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

PART NUMBERING GUIDE

EDI 8 F 32 512 C 20 MM C -G

PREFIX

PRODUCT GROUP

8 = SRAM

SUBSTRATE

F = FR4 with Tin Lead Contacts

G = FR4 with Gold Contacts

DATA BUS WIDTH

32 = 32 Bit

DENSITY

512 = 512K

TECHNOLOGY

C = CMOS (5.0V)

SPEED

15 = 15ns

20 = 20ns

25 = 25ns

PACKAGE

MM = Straight SIMM

MZ = ZIP

TEMPERATURE RANGE

C = Commercial 0°C to +70°C

I = Industrial

-40°C to +85°C

G = RoHS COMPLIANT

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

EDI8F32512C

Document Title

512Kx32 Static Ram CMOS, High Speed Module

Revision History

Rev #

History

Release Date Status

Rev 9

9.1 Added RoHS compliance option

9.2 Offer vendor source control

9.3 Provide industrial temperature option

9.4 Added part number guide

March 2006

Final

9.5 Added document title page

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

March 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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