EDI8L21664V15BI [WEDC]

SRAM Module, 128KX16, 15ns, CMOS, PBGA74, 15 X 15 MM, MO-151, BGA-74;
EDI8L21664V15BI
型号: EDI8L21664V15BI
厂家: WHITE ELECTRONIC DESIGNS CORPORATION    WHITE ELECTRONIC DESIGNS CORPORATION
描述:

SRAM Module, 128KX16, 15ns, CMOS, PBGA74, 15 X 15 MM, MO-151, BGA-74

静态存储器 内存集成电路
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EDI8L21664V  
TMS320C54x External SRAM Memory Solution  
FEATURES  
DESCRIPTION  
n DSP Memory Solution  
The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed  
with two 64Kx16 die mounted on a multi-layer laminate substrate.  
The device is packaged in a 74 lead, 15mm by 15mm, BGA.  
Ÿ Texas Instruments TMS320C54x  
n 3.3V Operating Supply Voltage  
Operating with a 3.3V power supply and with access times as fast  
as 10ns, the device allows the user to develop a fast external  
memory for Texas Instuments' TMS320C54x DSP.  
n Access Times of 10, 12 and 15ns  
n Single Write Control and Output Enable Lines  
n One Chip Enable Line per Memory Bank  
n 50% Space Savings vs. Monolithic TSOPs  
n Upgrade Path Available in Same Footprint  
n Multiple VCC and VSS Pins  
The device consists of two separate banks of 64Kx16 of memory.  
Each bank has a separate Chip Enable pin and higher order  
address select pin. Bank 'A' is controlled using CE1\ and A15A.  
Bank 'B' is controlled using CE2\ and A15B. The two banks have  
common I/Os (DQ0-15) and control lines (WE\ and G\).  
n Reduced Inductance and Capacitance  
n 74 pin BGA, JEDEC MO-151  
PIN CONFIGURATION  
1
2
3
4
5
6
7
8
9
10  
11  
A
B
C
D
E
F
G
H
J
VSS VCC VCC DQ15 DQ14 VCC DQ13 DQ11 DQ9 DQ8 N/C A  
VSS VCC VCC VSS VSS VCC DQ12 DQ10 DQ4 VCC VCC B  
VSS VSS  
VSS VSS  
VSS VSS  
A15A CE1\  
VCC  
VSS VCC C  
VSS VCC D  
VSS VCC E  
DQ3 DQ7 F  
DQ5 DQ0 G  
DQ6 DQ1 H  
N/C  
WE\  
VSS CE2\  
VSS A14  
VSS A12  
A15B A13  
VCC  
VSS  
VSS  
DQ2 N\C  
J
K
L
K
L
VCC A10  
VCC A11  
A8  
A9  
A6  
A7  
A4  
VSS A5  
A2  
A0  
A3  
G\  
A1  
1
2
3
4
5
6
7
8
9
10  
11  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Dec. 2002 Rev. 1  
ECO #15721  
1
EDI8L21664V  
BLOCK DIAGRAM  
A0-A14  
G\  
WE\  
CE1\  
A15 A  
64K x 16  
SRAM  
DQ0-DQ15  
CE2\  
A15 B  
64K x 16  
SRAM  
PIN DESCRIPTIONS  
Pin  
Symbol  
A0-A14  
A15A  
A15B  
WE\  
CE1\  
CE2\  
G\  
Type  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Description  
Addresses  
Addresses: A15 on Bank 'A' of memory  
Addresses: A15 on Bank 'B' of memory  
Write Enable: This active LOW input allows a full 16-bit WRITE to occur.  
Chip Enable: This active LOW input is used to enable the 'A' Bank of the device.  
Chip Enable: This active LOW input is used to enable the 'B' Bank of the device.  
Output Enable: This active LOW asynchronous input enables the data output drivers.  
Various  
Various  
Various  
DQ0-15  
Vcc  
Vss  
Input/Output Data Inputs/Outputs  
Supply  
Ground  
Core power supply: +3.3V -5%/+10%  
Ground  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
2
Dec. 2002 Rev. 1  
ECO #15721  
EDI8L21664V  
ABSOLUTE MAXIMUM RATINGS*  
RECOMMENDED DC OPERATING CONDITIONS  
Voltage on Vcc Supply Relative to Vss -0.5V to 4.6V  
Description  
Sym  
VIH  
VIL  
Min  
2.2  
-0.3  
3.0  
Max  
Vcc+0.5  
0.8  
Units  
VIN  
-0.5V to Vcc+0.5V  
-55°C to +125°C  
+125°C  
Input High Voltage  
Input Low Voltage  
Supply Voltage  
V
V
V
Storage Temperature  
Junction Temperature  
Power Dissipation  
Vcc  
3.6  
3 Watts  
Short Circuit Output Current (per I/O)  
50 mA  
*Stress greater than those listed under "Absolute Maximum Ratings"  
may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other  
conditions greater than those indicated in the operational sections of  
this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
AC TEST CONDITIONS  
Input Pulse Levels  
VSS to 3.0V  
1.5ns  
1.5V  
See Figure 1  
Input Rise and Fall Times (Max)  
Input and Output Timing Levels  
Output Load  
CAPACITANCE  
(f=1.0MHz, VIN=VCC or VSS)  
Figure 1 - Output Load Equivalent  
Parameter  
Address Lines  
Data Lines  
Sym  
CA  
CD/Q  
CC  
Max  
8
17  
15  
Unit  
pF  
pF  
Output  
Z0 = 50  
Control Lines  
pF  
50  
Vt = 1.25V  
DC ELECTRICAL CHARACTERISTICS  
(f=1.0MHz, VIN=VCC or VSS)  
Parameter  
Power Supply  
Current: Operating  
Sym  
ICC1  
Conditions  
Device Selected; all inputs £VIL or ³VIH;  
cycle time ³tKC MIN;  
Min  
Max  
380  
360  
260  
60  
Units  
mA  
-10ns  
-12ns  
-15ns  
VCC=MAX; outputs open  
CMOS Standby  
TTL Standby  
ISB2 Device deselected; VCC=MAX; all inputs £VSS +0.2  
or ³ VCC -0.2; all inputs static; CLK frequency = 0  
ISB3  
mA  
mA  
Device deselected; all inputs £VIL or ³VIH;  
all inputs static; VCC=MAX; CLK frequency = 0  
0V£VIN£VCC  
120  
Input Leakage Current  
Output Leakage Current  
Output High Voltage  
Output Low Voltage  
ILI  
ILO  
VOH  
VOL  
-5  
--5  
2.4  
5
5
µA  
µA  
V
Output(s) disabled, 0V£VOUT£VCC  
IOH = -4.0mA  
IOL = 4.0mA  
0.4  
V
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Dec. 2002 Rev. 1  
ECO #15721  
3
EDI8L21664V  
AC ELECTRICAL CHARACTERISTICS  
Symbol  
10ns  
12ns  
15ns  
Read Cycle  
Min Max Min Max Min  
Max Units  
Read Cycle Time  
Address Access Time  
Chip Enable Access  
Output Hold from Address Change  
Chip Enable to Output in Low-Z  
Chip Disable to Output in High-Z  
Output Enable access time  
Output Enable to Output in Low-Z  
Output Disable to Output in High-Z  
Write Cycle  
tAVAV  
tAVQV  
tELQV  
tAVQX  
tELQX  
tEHQZ  
tGLQV  
tGLQX  
tGHQZ  
10  
12  
15  
ns  
10  
10  
12  
12  
15  
15  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
3
3
4
4
4
4
5
5
6
6
7
7
0
0
0
5
6
7
Write Cycle Time  
Chip Enable to End of Write  
tAVAV  
tELWH  
10  
8
12  
8
15  
9
ns  
ns  
Address valid to End of Write,  
with G\ HIGH  
tAVGHWH  
tAVWL  
tAVWH  
tWLWH  
tWLGHWH  
tDVWH  
tWHDX  
tWHQX  
tWLQZ  
8
0
0
10  
8
6
8
0
0
10  
8
6
9
0
0
11  
9
7
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
Address Hold from End of Write  
Write Pulse Width  
Write Pulse Width, with G\ HIGH  
Data Setup Time  
Data Hold Time  
0
3
0
4
0
5
Write Disable to Output in Low-Z  
Write Enable to Output in High-Z  
5
6
7
READ CYCLE 1 - W HIGH, G, E LOW  
TAVAV  
A
ADDRESS 1  
ADDRESS 2  
TAVQX  
TAVQV  
Q
DATA 2  
DATA 1  
READ CYCLE 2 - W HIGH  
TAVAV  
A
E
TAVQV  
TELQV  
TEHQZ  
TGHQZ  
TELQX  
G
Q
TGLQV  
TGLQX  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
4
Dec. 2002 Rev. 1  
ECO #15721  
EDI8L21664V  
WRITE CYCLE 1 - W CONTROLLED  
TAVAV  
TELWH  
A
E
TWHAX  
TWHDX  
TAVWH  
TWLWH  
W
TAVWL  
TDVWH  
HIGH Z  
DATA VALID  
D
Q
TWHQX  
TWLQZ  
WRITE CYCLE 2 - E CONTROLLED  
TAVAV  
A
TAVEL  
TELEH  
E
TAVEH  
TEHAX  
TEHDX  
TWLEH  
W
TDVEH  
D
Q
DATA VALID  
HIGH Z  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Dec. 2002 Rev. 1  
ECO #15721  
5
EDI8L21664V  
ORDERING INFORMATION  
COMMERCIAL TEMPERATURE RANGE (0°C TO +70°C)  
INDUSTRIAL TEMPERATURE RANGE (-40°C TO +85°C)  
Part Number  
Speed  
(ns)  
10  
12  
15  
Package  
No.  
Part Number  
Speed  
(ns)  
15  
Package  
No.  
EDI8L21664V10BC  
EDI8L21664V12BC  
EDI8L21664V15BC  
EDI8L21664V15BI  
PACKAGE DESCRIPTION  
74 PIN BGA JEDEC MO-151  
15.0 max.  
3.0 max.  
1.27  
15.0  
max.  
0.50/.070  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
6
Dec. 2002 Rev. 1  
ECO #15721  

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