W3EG7266S262D3S [WEDC]
暂无描述;
| 型号： | W3EG7266S262D3S |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | 暂无描述 存储 内存集成电路 动态存储器 双倍数据速率 |
| 文件： | 总12页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
W3EG7266S-D3
White Electronic Designs
PRELIMINARY*
512MB – 64Mx72 DDR SDRAM REGISTERED w/PLL
FEATURES
DESCRIPTION
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Double-data-rate architecture
The W3EG7266S is a 64Mx72 Double Data Rate
SDRAM memory module based on 512Mb DDR SDRAM
component. The module consists of nine 64Mx8 DDR
SDRAMs in 66 pin TSOP package mounted on a 184 Pin
FR4 substrate.
Clock speeds of 100MHz and 133MHz
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2,5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lenths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
Serial presence detect
Power Supply: 2.5V 0.20V
NOTE: Consult factory for availability of:
• RoHS compliant products
Standard 184 pin DIMM package
• D3 = 26.67mm (1.05")
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
DDR266 @CL=2
133MHz
DDR266 @CL=2.5
133MHz
DDR200 @CL=2
100MHz
Clock Speed
CL-tRCD-tRP
2-2-2
2.5-3-3
2-2-2
October 2005
Rev. 3
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
PIN CONFIGURATIONS
PIN NAMES
PIN
1
2
3
4
5
6
7
8
SYMBOL
VREF
DQ0
VSS
DQ1
DQS0
DQ2
VCC
DQ3
NC
RESET#
VSS
DQ8
DQ9
DQS1
VCC
*CK1
*CK1#
VSS
DQ10
DQ11
CKE0
VCC
DQ16
DQ17
DQS2
VSS
A9
DQ18
A7
VCC
DQ19
A5
DQ24
VSS
DQ25
DQS3
A4
PIN
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
SYMBOL
DQS8
A0
CB2
VSS
PIN
93
94
95
96
97
98
99
SYMBOL
VSS
DQ4
DQ5
VCC
DQM0
DQ6
DQ7
VSS
NC
NC
NC
VCC
DQ12
DQ13
DQM1
VCC
DQ14
DQ15
CKE1
VCC
*BA2
DQ20
A12
VSS
DQ21
A11
DQM2
VCC
DQ22
A8
DQ23
VSS
A6
DQ28
DQ29
VCC
DQM3
A3
DQ30
VSS
DQ31
CB4
CB5
VCC
PIN
139
140
141
VCC
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
SYMBOL
VSS
DQM8
A10
CB6
VCC
A0 – A12
BA0-BA1
DQ0-DQ63
CB0-CB7
DQS0-DQS8
CK0
CK0#
CKE0
CS0#
RAS#
Address input (Multiplexed)
Bank Select Address
Data Input/Output
Check bits
Data Strobe Input/Output
Clock Input
CB3
BA1
CB7
VSS
Clock Input
DQ32
VCC
DQ33
DQS4
DQ34
VSS
Clock Enable Input
Chip select Input
Row Address Strobe
Column Address Strobe
Write Enable
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
DQ36
DQ37
VCC
DQM4
DQ38
DQ39
VSS
DQ44
RAS#
DQ45
VCC
CS0#
*CS1#
DQM5
VSS
DQ46
DQ47
*CS3#
VCC
DQ52
DQ53
A13*
VCC
DQM6
DQ54
DQ55
VCC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
CAS#
WE#
DQM0-DQM8 Data-In Mask
VCC
VSS
VREF
VCCSPD
BA0
Power Supply (2.5V)
Ground
Power Supply for Reference
Serial EEPROM Power Supply
(2.3V to 3.6V)
Serial data I/O
Serial clock
Address in EEPROM
VCC Identification Flag
No Connect
DQ35
DQ40
VCC
WE#
DQ41
CAS#
VSS
DQS5
DQ42
DQ43
VCC
*CK2#
DQ48
DQ49
VSS
*CK2#
*CK2
VCC
DQS6
DQ50
DQ51
VSS
VCCID
DQ56
DQ57
VCC
DQS7
DQ58
DQ59
VSS
SDA
SCL
SA0-SA2
VCCID
NC
RESET#
Reset Enable
* Not Used
NC
DQ60
DQ61
VSS
DQM7
DQ62
DQ63
VCC
SA0
SA1
SA2
VCC SPD
VCC
DQ26
DQ27
A2
VSS
A1
CB0
CB1
VCC
NC
SDA
SCL
CK0
CK0#
October 2005
Rev. 3
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
FUNCTIONAL BLOCK DIAGRAM
CS0#
DQS0
DQM0
DQS4
DQM4
DM CS# DQS
DQ0
DM CS# DQS
DQ0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ1
DQ1
DQ2
DQ2
DQ3
DQ3
DQ4
DQ4
DQ5
DQ5
DQ6
DQ6
DQ7
DQ7
DQS1
DQM1
DQS5
DQM5
DM CS# DQS
DQ0
DM CS# DQS
DQ0
DQ8
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ9
DQ1
DQ1
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ2
DQ2
DQ3
DQ3
DQ4
DQ4
DQ5
DQ5
DQ6
DQ6
DQ7
DQ7
DQS2
DQM2
DQS6
DQM6
DM CS# DQS
DQ0
DM CS# DQS
DQ0
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ1
DQ1
DQ2
DQ2
DQ3
DQ3
DQ4
DQ4
DQ5
DQ5
DQ6
DQ6
DQ7
DQ7
DQS3
DQM3
DQS7
DQM7
DM CS# DQS
DQ0
DM CS# DQS
DQ0
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQ1
DQ1
DQ2
DQ2
DQ3
DQ3
DQ4
DQ4
DQ5
DQ5
DQ6
DQ6
DQ7
DQ7
DQS8
DQM8
DDR SDRAM
DM CS# DQS
DQ0
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
REGISTER X 2
DQ1
120
DQ2
CK0
CK0#
DQ3
PLL
DQ4
DQ5
DQ6
DQ7
SERIAL PD
R
E
G
I
S
T
E
R
S
SCL
WP
SDA
CS0#
BA0, BA1
A0-A12
RAS#
RCS0#
A0 A1 A2
RBA0, RBA1: DDR SDRAMS
RA0-RA12: DDR SDRAMS
RRAS#: DDR SDRAMS
RCAS#: DDR SDRAMS
RCKE0: DDR SDRAMS
RWE#: DDR SDRAMS
SA0 SA1 SA2
CAS#
CKE0
VCCSP
SPD
WE#
VCC
VREF
VSS
DDR SDRAMS
DDR SDRAMS
DDR SDRAMS
CK
RESET#
CK#
NOTE: All resistor values are 22 ohms unless otherwise specified
October 2005
Rev. 3
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
V
V
°C
W
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
VIN, VOUT
VCC, VCC
TSTG
-0.5 to 3.6
-1.0 to 3.6
-55 to +150
9
Power Dissipation
PD
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC CHARACTERISTICS
0°C ≤ TA ≤ 70°C, VCC = 2.5V 0.2V
Parameter
Symbol
VCC
VCC
VREF
VTT
Min
2.3
Max
2.7
Unit
V
Supply Voltage
Supply Voltage
2.3
2.7
V
Reference Voltage
Termination Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
1.15
1.35
V
1.15
1.35
V
VIH
VREF + 0.15
-0.3
VCC + 0.3
VREF -0.15
—
V
VIL
V
VOH
VOL
VTT + 0.76
—
V
VTT-0.76
V
CAPACITANCE
TA = 25°C. f = 1MHz, VCC = 2.5V
Parameter
Input Capacitance (A0-A12)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0)
Input Capacitance (CK0#,CK0)
Input Capacitance (CS0#)
Input Capacitance (DQM0-DQM8)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)(DQS)
Data input/output capacitance (CB0-CB7)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
COUT
COUT
Max
6.5
6.5
6.5
5.5
6.5
8
6.5
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
October 2005
Rev. 3
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C ≤ TA ≤ 70°C, VCC = 2.5V 0.2V, VCC = 2.5V 0.2V
Includes DDR SDRAM component only
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR200@CL=2
Max
Parameter
Symbol Conditions
IDD0
Units
Operating Current
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
1170
1170
1035
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
1440
45
1440
45
1305
45
mA
rnA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
405
315
405
315
360
270
mA
mA
Active Power-Down
Standby Current
IDD3P
IDD3N
One device bank active; Power-Down
mode; tCK (MIN); CKE=(low)
Active Standby
Current
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
450
1485
1440
450
1485
1440
450
1305
1215
mA
mA
rnA
Operating Current
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
Auto Refresh
Current
IDD5
tRC = tRC (MIN)
2610
45
2610
45
2520
45
mA
mA
Self Refresh Current
Operating Current
IDD6
CKE ≤ 0.2V
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
3600
3600
3150
mA
October 2005
Rev. 3
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
Recommended operating conditions, 0°C ≤ TA ≤ 70°C, VCC = 2.5V 0.2V, VCC = 2.5V 0.2V
Includes PLL and register power
DDR266@CL=2
Max
DDR266@CL=2.5
Max
DDR200@CL=2
Max
Parameter
Symbol Conditions
IDD0
Units
Operating Current
One device bank; Active - Precharge;
tRC=tRC (MIN); tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle; Address and control
inputs changing once every two
cycles.
1445
1445
1310
mA
Operating Current
IDD1
One device bank; Active-Read-
Precharge Burst = 2; tRC=tRC (MIN);
tCK=tCK (MIN); lOUT = 0mA; Address
and control inputs changing once per
clock cycle.
1715
45
1715
45
1580
45
mA
rnA
Precharge Power-
Down Standby
Current
IDD2P
All device banks idle; Power-down
mode; tCK=tCK (MIN); CKE=(low)
Idle Standby Current
IDD2F
CS# = High; All device banks idle;
tCK=tCK (MIN); CKE = high; Address
and other control inputs changing
once per clock cycle. VIN = VREF for
DQ, DQS and DM.
715
315
715
315
670
270
mA
mA
Active Power-Down
Standby Current
IDD3P
IDD3N
One device bank active; Power-Down
mode; tCK (MIN); CKE=(low)
Active Standby
Current
CS# = High; CKE = High; One device
bank; Active-Precharge; tRC=tRAS
(MAX); tCK=tCK (MIN); DQ, DM and
DQS inputs changing twice per clock
cycle; Address and other control
inputs changing once per clock cycle.
760
1760
1715
760
1760
1715
715
1580
1490
mA
mA
rnA
Operating Current
Operating Current
IDD4R
Burst = 2; Reads; Continuous burst;
One device bank active; Address
and control inputs changing once
per clock cycle; TCK= TCK (MIN); lOUT
= 0mA.
IDD4W
Burst = 2; Writes; Continuous burst;
One device bank active; Address
and control inputs changing once per
clock cycle; tCK=tCK (MIN); DQ,DM
and DQS inputs changing once per
clock cycle.
Auto Refresh
Current
IDD5
tRC = tRC (MIN)
2920
355
2920
355
2830
355
mA
mA
Self Refresh Current
Operating Current
IDD6
CKE ≤ 0.2V
IDD7A
Four bank interleaving Reads (BL=4)
with auto precharge with tRC=tRC
(MIN); tCK=tCK (MIN); Address and
control inputs change only during
Active Read or Write commands.
3875
3875
3425
mA
October 2005
Rev. 3
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A
IDD1 : OPERATING CURRENT : ONE BANK
IDD7A : OPERATING CURRENT : FOUR BANKS
1. Typical Case : VCC=2.5V, T=25°C
2. Worst Case : VCC=2.7V, T=10°C
1. Typical Case : VCC=2.5V, T=25°C
2. Worst Case : VCC=2.7V, T=10°C
3. Only one bank is accessed with tRC (min), Burst
Mode, Address and Control inputs on NOP edge
are changing once per clock cycle. IOUT = 0mA
3. Four banks are being interleaved with tRC (min),
Burst Mode, Address and Control inputs on NOP
edge are not changing. Iout=0mA
4. Timing Patterns :
4. Timing Patterns :
•
•
•
DDR200 (100 MHz, CL=2) : tCK=10ns, CL2,
BL=4, tRCD=2*tCK, tRAS=5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the
same timing with random address changing;
50% of data changing at every burst
•
•
•
DDR200 (100 MHz, CL=2) : tCK=10ns, CL2,
BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with
Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0
- repeat the same timing with random address
changing; 100% of data changing at every
burst
DDR266 (133MHz, CL=2.5) : tCK=7.5ns,
CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat
the same timing with random address
DDR266 (133MHz, CL=2.5) : tCK=7.5ns,
CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK
Read with Autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
changing; 50% of data changing at every burst
DDR266 (133MHz, CL=2) : tCK=7.5ns, CL=2,
BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat
the same timing with random address
changing; 50% of data changing at every burst
DDR266 (133MHz, CL=2) : tCK=7.5ns, CL2=2,
BL=4, tRRD=2*tCK, tRCD=2*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N
A1 R0 - repeat the same timing with random
address changing; 100% of data changing at
every burst
Legend:
A = Activate, R = Read, W = Write, P = Precharge, N = NOP
A (0-3) = Activate Bank 0-3
R (0-3) = Read Bank 0-3
October 2005
Rev. 3
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
AC Characteristics
262/265
202
Parameter
Symbol
tAC
Min
-0.75
0.45
0.45
7.5
Max
+0.75
0.55
0.55
13
Min
-0.75
0.45
0.45
7.5
Max
+0.75
0.55
0.55
13
Units
ns
tCK
tCK
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Access window of DQs from CK, CK#
CK high-level width
CK low-level width
tCH
16
16
tCL
Clock cycle time
CL=2.5
CL=2
tCK (2.5)
tCK (2)
tDH
22
7.5/10
0.5
13
10
13
22
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK, CK#
DQS input high pulse width
0.5
14,17
14,17
17
tDS
0.5
0.5
tDIPW
tDQSCK
tDQSH
tDQSL
tDQSQ
tDQSS
tDSS
tDSH
tHP
1.75
-0.75
0.35
0.35
1.75
-0.75
0.35
0.35
+0.75
+0.75
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
0.5
0.5
13,14
0.75
0.2
1.25
0.75
0.2
1.25
0.2
0.2
tCH, tCL
tCH, tCL
18
8,19
8,20
6
Data-out high-impedance window from CK, CK#
Data-out low-impedance window from CK, CK#
Address and control input hold time (fast slew rate)
Address and control input set-up time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
tHZ
+0.75
+0.75
tLZ
-0.75
0.90
0.90
1
-0.75
0.90
0.90
1
tIHf
tISf
6
tIHs
6
tISs
1
1
6
tIPW
2.2
15
2.2
16
tMRD
tQH
tHP-tQHS
tHP-tQHS
13,14
15
tQHS
tRAS
tRAP
tRC
0.75
120,000
0.75
120,000
ACTIVE to PRECHARGE command
40
15
60
75
40
20
65
75
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
tRFC
21
October 2005
Rev. 3
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS (continued)
Notes 1-5, 7; notes appear following parameter tables; 0°C ≤ TA ≤ +70°C; VCC = +2.5V 0.2V, VCC = +2.5V 0.2V
AC Characteristics
262/265
202
Parameter
Symbol
tRCD
Min
15
Max
Min
20
Max
Units
ns
Notes
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
tRP
15
20
ns
tRPRE
tRPST
tRRD
0.9
0.4
15
1.1
0.6
0.9
0.4
15
1.1
0.6
tCK
tCK
ns
19
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
tWPRE
tWPRES
tWPST
tWR
0.25
0
0.25
0
tCK
ns
DQS write preamble setup time
DQS write postamble
10,11
9
0.4
15
0.6
0.4
15
0.6
tCK
ns
Write recovery time
Internal WRITE to READ command delay
Data valid output window
tWTR
1
1
tCK
ns
NA
tQH-tDQSQ
tQH-tDQSQ
13
12
12
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to VCC
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
tREFC
tREFI
70.3
7.8
70.3
7.8
μs
μs
tVTD
0
0
ns
tXSNR
tXSRD
75
75
ns
200
200
tCK
October 2005
Rev. 3
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
Notes
1.
2.
All voltages referenced to VSS
11. It is recommended that DQS be valid (HIGH or LOW) on or before
the WRITE command. The case shown (DQS going from High-Z to
logic LOW) applies when no WRITEs were previously in progress
on the bus. If a previous WRITE was in progress, DQS could be
Tests for AC timing, IDD, and electrical AC and DC characteristics
may be conducted at normal reference / supply voltage levels, but
the related specifications and device operations are guaranteed for
the full voltage range specified.
high during this time, depending on tDQSS
.
12. The refresh period is 64ms. This equates to an average refresh
rate of 15.625µs or 7.8125µs. However, an AUTO REFRESH
command must be asserted at least once every 140.6µs or
70.3µs; burst refreshing or posting by the DRAM controller greater
than eight refresh cycles is not allowed.
3.
Outputs are measured with equivalent load:
V
TTT
50Ω
13. The valid data window is derived by achieving other specifications
- tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid
window derates directly proportional with the clock duty cycle
and a practical data valid window can be derived. The clock is
allowed a maximum duty cycled variation of 45/55. Functionality
is uncertain when operating beyond a 45/55 ratio. The data valid
window derating curves are provided below for duty cycles ranging
between 50/50 and 45/55.
RReeffeerreennccee
Outtppuut
Poiint
30pF
(VOUT
)
4.
AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V
in the test environment, but input timing is still referenced to VREF
(or to the crossing point for CK/CK#), and parameter specifications
are guaranteed for the specified AC input levels under normal use
conditions. The minimum slew rate for the input signals used to
test the device is 1V/ns in the range between VIL(AC) and VIH(AC).
14. Referenced to each output group: x4 = DQS with DQ0-DQ4.
15. READs and WRITEs with auto precharge are not allowed to be
issued until tRAS (MIN) can be satisfied prior to the internal precharge
command being issued.
5.
6.
The AC and DC input level specifications are defined in the SSTL_
2 standard (i.e., the receiver will effectively switch as a result of the
signal crossing the AC input level, and will remain in that state as
long as the signal does not ring back above [below] the DC input
LOW [high] level).
16. JEDEC specifies CK and CK# input slew rate must be > 1V/ns
(2V/ns differentially).
17. DQ and DM input slew rates must not deviate from DQS by more
than 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing
must be derated: 50ps must be added to tDS and tDH for each
100mV/ns reduction in slew rate. If slew rates exceeds 4V/ns,
functionality is uncertain.
Command/Address input slew rate = 0.5V/ns. For -75 with slew
rates 1V/ns and faster, tIS and tIH are reduced to 900ps. If the
slew rate is less than 0.5V/ns, timing must be derated: tIS has an
additional 50ps per each 100mV/ns reduction in slew rate from the
500mV/ns. tIH has 0ps added, that is, it remains constant. If the
slew rate exceeds 4.5V/ns, functionality is uncertain.
18.
t
HP min is the lesser of tCL min and tCH min actually applied to the
device CK and CK# inputs, collectively during bank active.
19. This maximum value is derived from the referenced test load. In
practice, the values obtained in a typical terminated design may
reflect up to 310ps less for tHZ (MAX) and last DVW. tHZ (MAX) will
prevail over the tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN)
will prevail over tDQSCK (MIN) + PRE (MAX) condition.
7.
8.
Inputs are not recognized as valid until VREF stabilizes. Exception:
during the period before VREF stabilizes, CKE ≤ 0.3 x VCC is
recognized as LOW.
tHZ and tLZ transitions occur in the same access time windows as
20. For slew rates greater than 1V/ns the (LZ) transition will start about
310ps earlier.
valid data transitions. These parameters are not referenced to a
specific voltage level, but specify when the device output is no
longer driving (HZ) and begins driving (LZ).
21. CKE must be active (High) during the entire time a refresh
command is executed. That is, from the time the AUTO REFRESH
command is registered, CKE must be active at each rising clock
edge, until tREF later.
9.
The maximum limit for this parameter is not a device limit. The
device will operate with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
22. Whenever the operating frequency is altered, not including jitter,
the DLL is required to be reset. This is followed by 200 clock cycles
(before READ commands).
10. This is not a device limit. The device will operate with a negative
value, but system performance could be degraded due to bus
turnaround.
October 2005
Rev. 3
10
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
ORDERING INFORMATION FOR D3
Part Number
Speed
CAS Latency
tRCD
2
tRP
2
Height*
W3EG7266S262D3
W3EG7266S265D3
W3EG7266S202D3
133MHz/266Mbps
133MHz/266Mbps
100MHz/200Mbps
2
2.5
2
26.67 (1.05")
26.67 (1.05")
26.67 (1.05")
3
3
2
2
NOTES:
• Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant)
• Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to
be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others)
• Consult factory for availability of industrial temperature (-40°C to 85°C) option
PACKAGE DIMENSIONS FOR D3
133.48
(5.255)
MAX
3.99
(0.157)
(4X)
4.06
(0.160)
MAX
3.99
(0.157)
MAX
26.67
(1.050)
MAX
17.78
(0.700)
1.27 (0.050) TYP
10.01
(0.394)
6.35
49.53
3.00
(0.118)
(4X)
(0.250)
(1.950)
1.27 0.10
(0.050 0.004)
64.77
(2.550)
6.35
1.78
(0.070)
(0.250)
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).
October 2005
Rev. 3
11
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
W3EG7266S-D3
White Electronic Designs
PRELIMINARY
Document Title
512MB – 64Mx72 DDR SDRAM REGISTERED w/PLL
Revision History
Rev #
History
Release Date Status
Rev A
Rev B
Rev 1
Created
2-21-02
5-23-02
6-04
Advanced
Advanced
Preliminary
Corrected mechanical drawing
1.1 Updated CAP and IDD specs
1.2 Removed "ED" from part number
1.3 Moved from Advanced to Preliminary
Rev 2
Rev 3
2.1 Added "JD3" package option
11-04
10-05
Preliminary
Preliminary
2.2 Updated IDD specs
2.3 "D3" NOT RECOMMENDED FOR NEW DESIGNS
3.1 Removed "JD3" laminate, does not support
3.2 Use "D3" package option
October 2005
Rev. 3
12
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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