WS512K32V-20G2TIA [WEDC]

SRAM Module, 512KX32, 20ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68;
WS512K32V-20G2TIA
型号: WS512K32V-20G2TIA
厂家: WHITE ELECTRONIC DESIGNS CORPORATION    WHITE ELECTRONIC DESIGNS CORPORATION
描述:

SRAM Module, 512KX32, 20ns, CMOS, CQMA68, 22.40 MM, CERAMIC, LQFP-68

静态存储器 内存集成电路
文件: 总8页 (文件大小:250K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
White Electronic Designs  
ꢁRELIMINARY*  
n
Low Voltage Operation:  
n
n
n
Access Times of 15, 17, 20ns  
Low Voltage Operation  
ꢁackaging  
• 3.3V 10ꢀ ꢁower Supply  
Low ꢁower CMOS  
n
n
n
TTL Compatible Inputs and Outputs  
Fully Static Operation:  
• 66-pin, ꢁGA Type, 1.075 inch square, Hermetic  
Ceramic HIꢁ (ꢁackage 400)  
• 68 lead, 22.4mm (0.880 inch) CQF, (G2T)1, 4.6mm  
(0.180"), (ꢁackage 509)  
• No clock or refresh required.  
Three State Output.  
n
n
Built-in Decoupling Caps and Multiple Ground ꢁins for  
Low Noise Operation  
• 68 lead, 23.9mm (0.940 inch) sq., Low ꢁrofile CQF,  
(G1U), 3.56mm (0.140 inch) high, (ꢁackage 519)  
n Weight  
n
n
Organized as 512Kx32; User Configurable as 1Mx16 or  
2Mx8  
WS512K32V-XG1UX - 5 grams typical  
WS512K32V-XG2TX1 - 8 grams typical  
WS512K32NV-XH1X - 13 grams typical  
Commercial, Industrial and Military Temperature Ranges  
Note 1: ꢁackage Not Recommended For New Design  
*This data sheet describes a product under development, not fully  
characterized, and is subject to change without notice.  
I/O0-31  
A0-18  
WE1-4  
CS1-4  
OE  
DataInputs/Outputs  
AddressInputs  
Write Enables  
Chip Selects  
1
12  
23  
34  
45  
56  
I/O8  
I/O9  
I/O10  
A13  
WE2  
CS2  
GND  
I/O11  
A10  
I/O15  
I/O14  
I/O13  
I/O12  
OE  
I/O24  
I/O25  
I/O26  
A6  
VCC  
CS4  
WE4  
I/O27  
A3  
I/O31  
I/O30  
I/O29  
I/O28  
A0  
Output Enable  
ꢁower Supply  
Ground  
VCC  
GND  
NC  
A14  
A7  
Not Connected  
A15  
A11  
A18  
NC  
A4  
A1  
A16  
A12  
WE1  
I/O7  
I/O6  
I/O5  
I/O4  
A8  
A5  
A2  
A17  
VCC  
CS1  
NC  
A9  
WE3  
CS3  
GND  
I/O19  
I/O23  
I/O22  
I/O21  
I/O20  
I/O0  
I/O1  
I/O2  
I/O16  
I/O17  
I/O18  
I/O3  
11  
22  
33  
44  
55  
66  
July 2002 Rev. 7  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
White Electronic Designs  
I/O0-31 DataInputs/Outputs  
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61  
60  
A0-18  
WE1-4  
CS1-4  
OE  
AddressInputs  
Write Enables  
Chip Selects  
Output Enable  
ꢁower Supply  
Ground  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
6
7
I/O16  
I/O17  
I/O18  
I/O19  
I/O20  
I/O21  
I/O22  
I/O23  
GND  
I/O24  
I/O25  
I/O26  
I/O27  
I/O28  
I/O29  
I/O30  
I/O31  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
Vcc  
GND  
NC  
GND  
I/O  
8
9
Not Connected  
I/O  
I/O10  
I/O11  
I/O12  
I/O13  
I/O14  
I/O15  
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43  
Note 1: ꢁackage Not Recommended For New Design  
White Electronic Designs Corporation • ꢁhoenix AZ • (602) 437-1520  
White Electronic Designs  
H
L
X
L
X
H
L
Standby  
Read  
High Z  
Data Out  
Data In  
Standby  
Active  
Active  
Active  
OperatingTemperature  
StorageTemperature  
SignalVoltageRelativetoGND  
JunctionTemperature  
SupplyVoltage  
TA  
TSTG  
VG  
TJ  
-55  
-65  
-0.5  
+125  
+150  
4.6  
°C  
°C  
V
L
X
H
Write  
L
H
Out Disable  
High Z  
150  
°C  
V
VCC  
-0.5  
4.6  
SupplyVoltage  
VCC  
3.0  
3.6  
VCC + 0.3  
+0.8  
V
V
V
OEcapacitance  
COE  
CWE  
V
V
IN = 0 V, f = 1.0 MHz  
IN = 0 V, f = 1.0 MHz  
50  
pF  
InputHighVoltage  
InputLowVoltage  
VIH  
VIL  
2.2  
WE1-4 capacitance  
HIꢁ (ꢁGA)  
pF  
20  
20  
-0.3  
CQFG2T/G1U  
CS1-4 capacitance  
CCS  
CI/O  
CAD  
V
IN = 0 V, f = 1.0 MHz  
20  
20  
50  
pF  
pF  
pF  
DataI/Ocapacitance  
VI/O = 0 V, f = 1.0 MHz  
Addressinputcapacitance  
VIN = 0 V, f = 1.0 MHz  
This parameter is guaranteed by design but not tested.  
InputLeakageCurrent  
OutputLeakageCurrent  
ILI  
ILO  
VIN =GNDtoVCC  
10  
10  
µA  
µA  
CS=VIH, OE=VIH,VOUT =GNDtoVCC  
CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V  
CS= VIH, OE=VIH, f=5MHz,VCC =3.6V  
IOL = 4.0mA  
OperatingSupplyCurrent(x32Mode)  
StandbyCurrent  
ICC x 32  
ISB  
400  
200  
0.4  
mA  
mA  
V
OutputLowVoltage  
VOL  
OutputHighVoltage  
VOH  
IOH = -4.0mA  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V.  
NOTE: Contact factory for low power option.  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
White Electronic Designs  
Read Cycle Time  
tRC  
tAA  
15  
0
17  
0
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
AddressAccessTime  
15  
17  
20  
OutputHoldfromAddressChange  
Chip Select Access Time  
tOH  
tACS  
tOE  
15  
8
17  
8
20  
10  
OutputEnabletoOutputValid  
ChipSelecttoOutputinLowZ  
OutputEnabletoOutputinLowZ  
ChipDisabletoOutputinHighZ  
OutputDisabletoOutputinHighZ  
1.Thisparameterisguaranteedbydesignbutnottested.  
tCLZ1  
tOLZ1  
tCHZ1  
tOHZ1  
1
0
1
0
1
0
8
8
8
8
10  
10  
Write Cycle Time  
tWC  
tCW  
tAW  
tDW  
tWꢁ  
15  
12  
12  
9
17  
12  
12  
9
20  
14  
14  
10  
14  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ChipSelecttoEndofWrite  
AddressValidtoEndofWrite  
DataValidtoEndofWrite  
WriteulseWidth  
12  
0
14  
0
AddressSetupTime  
tAS  
AddressHoldTime  
tAH  
0
0
0
OutputActivefromEndofWrite  
Write Enable to Output in High Z  
Data Hold Time  
tOW1  
tWHZ1  
tDH  
2
3
3
8
8
9
0
0
0
1. This parameter is guaranteed by design but not tested.  
Input ꢁulse Levels  
Input Rise and Fall  
VIL = 0, VIH = 2.5  
V
ns  
V
5
InputandOutputReferenceLevel  
Output Timing Reference Level  
1.5  
1.5  
V
Notes:  
VZ is programmable from -2V to +7V.  
IOL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75W.  
VZ is typically the midpoint of VOH and VOL.  
IOL & IOHare adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
White Electronic Designs Corporation • ꢁhoenix AZ • (602) 437-1520  
White Electronic Designs  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS  
tAS  
tWP  
WE  
tOW  
tDH  
tWHZ  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1, WE CONTROLLED  
tWC  
ADDRESS  
WS32K32-XHX  
tAH  
tCW  
tAW  
tAS  
CS  
tWP  
WE  
tDW  
tDH  
DATA I/O  
DATA VALID  
WRITE CYCLE 2, CS CONTROLLED  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
White Electronic Designs  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND ꢁARENTHETICALLY IN INCHES  
White Electronic Designs Corporation • ꢁhoenix AZ • (602) 437-1520  
White Electronic Designs  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND ꢁARENTHETICALLY IN INCHES  
Note 1: ꢁackage Not Recommended For New Design  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND ꢁARENTHETICALLY IN INCHES  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
White Electronic Designs  
Blank=Goldplatedleads  
A = Solderdipleads  
M = Military  
I = Industrial  
C = Commercial  
-55°Cto+125°C  
-40°C to +85°C  
Cto+70°C  
H1 =1.075" sq. Ceramic Hex In Line ꢁackage, HIꢁ (ꢁackage 400)  
G2T1 = 22.4mm Ceramic Quad Flat ꢁack, CQFꢁ (ꢁackage 509)  
G1U = 23.9mm Ceramic Quad Flat ꢁack, Low ꢁrofile CQFꢁ (ꢁackage 519)  
N=NoConnectatpin21and39inHIforUpgrades(H1only)  
User configurable as 1Mx16 or 2Mx8  
Note 1: ꢁackage Not Recommended For New Design  
White Electronic Designs Corporation • ꢁhoenix AZ • (602) 437-1520  

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