ACTT2X-800ETN [WEEN]

Enhanced, high temperature ACTT power switch;


型号：	ACTT2X-800ETN
厂家：	WeEn Semiconductors
描述：	Enhanced, high temperature ACTT power switch
文件：	总14页 (文件大小：262K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

6 September 2018

Product data sheet

1. General description

Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic

package with self-protective capabilities against low and high energy transients. This "series ETN"

triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max)

150 °C) without the aid of a snubber. It is used in applications where "high junction operating

temperature capability" is required.

2. Features and benefits

•

Clamping structure ensuring safe high over-voltage withstand capability

•

High junction operating temperature capability (T_j(max)= 150 °C)

High minimum I_GTfor guaranteed immunity to gate noise

Full cycle AC conduction

Over-voltage withstand capability to IEC 61000-4-5

Pin compatible with standard triacs

Planar passivated for voltage ruggedness and reliability

Protective self turn-on capability for high energy transients

Safe clamping capability for low energy over-voltage transients

Less sensitive gate for high noise immunity

Triggering in three quadrants only

Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient

Package meets UL94V0 flammability requirement

Package is RoHS compliant

Package meets UL1557 isolation test requirement rated at 2500V RMS

3. Applications

•

AC pumps and fans

High power solenoids

Highly inductive, resistive and safety loads

Large and small appliances (White Goods)

Applications subject to high temperature (T_j(max)= 150 °C)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak off-

state voltage

800

I_T(RMS)

RMS on-state current

full sine wave; T_h≤ 134 °C; Fig. 1;

Fig. 2; Fig. 3

WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_TSM

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

state current

t_p= 20 ms; Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C;

t_p= 16.7 ms

T_j

junction temperature

peak pulse voltage

150

°C

V_PP

T_j= 25 °C; non-repetitive, off-state;

Fig. 6

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 100 mA; LD+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_T= 100 mA; LD+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_T= 100 mA; LD- G-;

T_j= 25 °C; Fig. 8

I_H

holding current

on-state voltage

clamping voltage

V_D= 12 V; T_j= 25 °C; Fig. 10

I_T= 3 A; T_j= 25 °C; Fig. 11

V_T

V_CL

I_CL= 0.1 mA; t_p= 1 ms; T_j= 25 °C

850

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

500

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit

V_DM= 536 V; T_j= 150 °C; exponential

waveform; gate open circuit

200

V/µs

dI_com/dt

rate of change of

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 2 A;

dV_com/dt = 20 V/µs; gate open circuit;

snubberless condition

A/ms

commutating current

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 2 A;

dV_com/dt = 10 V/µs; gate open circuit

1.5

A/ms

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 2 A;

dV_com/dt = 1 V/µs; gate open circuit

ACTT2X-800ETN

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Product data sheet

6 September 2018

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

common

load

gate

003aaf296

n.c.

mounting base; isolated

2 3

TO-220F (SOT186A)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

ACTT2X-800ETN

TO-220F

plastic single-ended package; isolated heatsink mounted; 1

mounting hole; 3-lead TO-220 "full pack"

SOT186A

ACTT2X-800ETN

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Product data sheet

6 September 2018

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak off-state

voltage

800

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_h≤ 134 °C; Fig. 1; Fig. 2;

Fig. 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; sine-wave pulse

I_G= 20 mA

I²t

I²t for fusing

1.6

100

A²s

A/µs

dI_T/dt

rate of rise of on-state

current

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

°C

average gate power

storage temperature

junction temperature

peak pulse voltage

over any 20 ms period

0.5

150

-40

V_PP

T_j= 25 °C; non-repetitive, off-state; Fig. 6

aaf251-001

aaf251-002

T(RMS)

(A)

T(RMS)

(A)

134 °C

-2

-1

-50

100

150

(°C)

surge duration (s)

f = 50 Hz; T_h= 134 °C

Fig. 1. RMS on-state current as a function of heatsink

temperature; maximum values

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

aaf251-003

128

h(max)

(°C)

conduction form

tot

angle

factor

(W)

(degrees)

120

180

2.816

1.967

1.570

1.329

1.110

133.5

α = 180

120

139

144.5

150

0.5

1.5

2.5

(A)

T(RMS)

α = conduction angle

a = form factor = I_T(RMS)/ I_T(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

aaf251-004

TSM

(A)

TSM

j(init)

= 25 °C max

number of cycles (n)

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

ACTT2X-800ETN

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

aaf251-005

TSM

(A)

TSM

j(init)

= 25 °C max

(1)

-5

-4

-3

-2

-1

(s)

t_p≤ 20 ms

(1) dI_T/dt limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

IEC 61000-4-5 Standards

Surge Generator

Gen

Filtering Unit

DUT

Load Model

AC Mains

220

003aal147

Fig. 6. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5

ACTT2X-800ETN

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-h)

thermal resistance

from junction to

heatsink

without heatsink compound; Fig. 7

5.5

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

K/W

aaf251-006

th (j-h)

(K/W)

-1

δ =

-2

-5

-4

-3

-2

-1

(s)

Fig. 7. Transient thermal impedance from junction to heatsink as a function of pulse duration

9. Isolation characteristics

Table 6. Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_isol(RMS)

RMS isolation voltage from all terminals to external heatsink;

sinusoidal waveform; clean and dust

2500

free; 50 Hz ≤ f ≤ 60 Hz; T_h= 25 °C

C_isol

isolation capacitance

from main terminal 2 to external

heatsink; f = 1 MHz; T_h= 25 °C

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

I_GTgate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 100 mA; LD+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_T= 100 mA; LD+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_T= 100 mA; LD- G-;

T_j= 25 °C; Fig. 8

I_L

latching current

V_D= 12 V; I_G= 100 mA; LD+ G+;

T_j= 25 °C; Fig. 9

V_D= 12 V; I_G= 100 mA; LD+ G-;

T_j= 25 °C; Fig. 9

V_D= 12 V; I_G= 100 mA; LD- G-;

T_j= 25 °C; Fig. 9

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 10

I_T= 3 A; T_j= 25 °C; Fig. 11

V_T

V_GT

on-state voltage

gate trigger voltage

V_D= 12 V; I_T= 100 mA; T_j= 25 °C;

Fig. 12

0.8

V_D= 400 V; I_T= 100 mA; T_j= 150 °C;

Fig. 12

0.2

0.5

I_D

off-state current

clamping voltage

V_D= 800 V; T_j= 25 °C

µA

V_D= 800 V; T_j= 150 °C

V_CL

I_CL= 0.1 mA; t_p= 1 ms; T_j= 25 °C

850

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

500

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit

V_DM= 536 V; T_j= 150 °C; exponential

waveform; gate open circuit

200

V/µs

dI_com/dt

rate of change of

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 2 A;

dV_com/dt = 20 V/µs; gate open circuit;

snubberless condition

A/ms

commutating current

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 2 A;

dV_com/dt = 10 V/µs; gate open circuit

1.5

A/ms

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 2 A;

dV_com/dt = 1 V/µs; gate open circuit

ACTT2X-800ETN

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

aaf251-007

aaf251-008

L(25°C)

GT(25°C)

(1)

(2)

(3)

-50

100

150

-50

100

150

T (°C)

(1) LD- G-

(2) LD+ G-

(3) LD+ G+

Fig. 9. Normalized latching current as a function of

junction temperature

Fig. 8. Normalized gate trigger current as a function of

junction temperature

aaf251-009

aaf251-010

(A)

H(25°C)

(2)

(3)

(1)

-50

100

150

T (°C)

(V)

V_o= 1.066 V; R_s= 0.2500 Ω

(1) T_j= 150 °C; typical values

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 10. Normalized holding current as a function of

junction temperature

Fig. 11. On-state current as a function of on-state

voltage

ACTT2X-800ETN

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

aaf251-011

1.6

GT(25°C)

1.2

0.8

0.4

-50

100

150

T (°C)

Fig. 12. Normalized gate trigger voltage as a function of junction temperature

ACTT2X-800ETN

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

11. Package outline

Fig. 13. Package outline TO-220F (SOT186A)

ACTT2X-800ETN

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ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

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equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Data sheet status

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

specification.

Applications — Applications that are described herein for any of these

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no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

[1] Please consult the most recently issued document before initiating or

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WeEn Semiconductors does not accept any liability related to any default,

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Short data sheet — A short data sheet is an extract from a full data sheet

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short data sheet, the full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

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Product data sheet

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WeEn Semiconductors

ACTT2X-800ETN

Enhanced, high temperature ACTT power switch

13. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................3

6. Ordering information....................................................3

7. Limiting values............................................................. 4

8. Thermal characteristics............................................... 7

9. Isolation characteristics...............................................7

10. Characteristics............................................................8

11. Package outline........................................................ 11

12. Legal information..................................................... 12

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 6 September 2018

ACTT2X-800ETN

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Product data sheet

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ACTT2X-800ETN [WEEN]

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