BTA310X-600D [WEEN]

3Q Hi-Com Triac;


型号：	BTA310X-600D
厂家：	WeEn Semiconductors
描述：	3Q Hi-Com Triac
文件：	总13页 (文件大小：276K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTA310X-600D

3Q Hi-Com Triac

15 September 2018

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"

plastic package. This "series D" triac balances the requirements of commutation performance and

gate sensitivity and is intended for interfacing with low power drivers including microcontrollers.

2. Features and benefits

•

3Q technology for improved noise immunity

•

Direct interfacing with low power drivers and microcontrollers

Good immunity to false turn-on by dV/dt

High commutation capability with very sensitive gate

High voltage capability

Isolated mounting base package

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

Very sensitive gate for easy logic level triggering

3. Applications

•

Industrial and domestic heating circuits

Motor controls e.g. washing machines and vacuum cleaners

Refrigeration and air-conditioner compressor controls

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

repetitive peak off-

state voltage

600

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_h≤ 73 °C; Fig. 1;

Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C;

state current

t_p= 20 ms; Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C;

t_p= 16.7 ms

T_j

junction temperature

125

°C

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

0.3

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BTA310X-600D

3Q Hi-Com Triac

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

0.3

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

0.3

I_H

holding current

on-state voltage

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 12 A; T_j= 25 °C; Fig. 10

V_T

1.25

1.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 125 °C; (V_DM= 67%

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 10 A;

dV_com/dt = 20 V/µs; (snubberless

condition); gate open circuit

A/ms

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 10 A;

dV_com/dt = 10 V/µs; gate open circuit

1.5

4.5

A/ms

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 10 A;

dV_com/dt = 1 V/µs; gate open circuit

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

main terminal 1

main terminal 2

gate

sym051

n.c.

mounting base; isolated

2 3

TO-220F (SOT186A)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

SOT186A

BTA310X-600D

TO-220F

plastic single-ended package; isolated heatsink mounted; 1

mounting hole; 3-lead TO-220 "full pack"

BTA310X-600D

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BTA310X-600D

3Q Hi-Com Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_DRM

repetitive peak off-state

voltage

600

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_h≤ 73 °C; Fig. 1; Fig. 2;

Fig. 3

non-repetitive peak on-

state current

full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

t_p= 10 ms; SIN

I²t

I²t for fusing

36.1

100

A²s

A/µs

dI_T/dt

rate of rise of on-state

current

I_G= 0.2 A

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

T_stg

T_j

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.5

150

125

-40

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100

T(RMS)

(A)

73 °C

T(RMS)

(A)

-2

-1

-50

100

150

(°C)

surge duration (s)

f = 50 Hz; T_h= 73 °C

Fig. 1. RMS on-state current as a function of heatsink

temperature; maximum values

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

BTA310X-600D

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BTA310X-600D

3Q Hi-Com Triac

003aaj691

conduction form

h(max)

tot

angle

(degrees)

factor

(°C)

(W)

α = 180

120

180

2.816

1.967

1.570

1.329

1.110

120

101

113

125

2.5

7.5

12.5

(A)

T(RMS)

α = conduction angle

a = form factor = I_T(RMS)/ I_T(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

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120

TSM

(A)

100

TSM

1/f

= 25 °C max

j(init)

number of cycles (n)

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

BTA310X-600D

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BTA310X-600D

3Q Hi-Com Triac

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TSM

(A)

(1)

TSM

j(init)

= 25 °C max

-5

-4

-3

-2

-1

t (s)

t_p≤ 20 ms

(1) dI_T/dt limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

BTA310X-600D

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BTA310X-600D

3Q Hi-Com Triac

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-h)

thermal resistance

from junction to

heatsink

full cycle or half cycle; with heatsink

compound; Fig. 6

K/W

full cycle or half cycle; without heatsink

compound; Fig. 6

5.5

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

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th(j-h)

(K/W)

(1)

(2)

(3)

(4)

-1

-2

-3

-5

-4

-3

-2

-1

(s)

(1) Unidirectional (half cycle) without heatsink compound

(2) Unidirectional (half cycle) with heatsink compound

(3) Bidirectional (full cycle) without heatsink compound

(4) Bidirectional (full cycle) with heatsink compound

Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration

9. Isolation characteristics

Table 6. Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_isol(RMS)

RMS isolation voltage from all terminals to external heatsink;

sinusoidal waveform; clean and dust

free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;

T_h= 25 °C

2500

C_isol

isolation capacitance

from main terminal 2 to external

heatsink; f = 1 MHz; T_h= 25 °C

BTA310X-600D

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BTA310X-600D

3Q Hi-Com Triac

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

I_GTgate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

0.3

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 12 A; T_j= 25 °C; Fig. 10

1.5

V_T

V_GT

on-state voltage

gate trigger voltage

1.25

0.7

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 400 V; I_T= 0.1 A; T_j= 125 °C;

Fig. 11

0.25

0.4

0.1

I_D

off-state current

V_D= 600 V; T_j= 125 °C

0.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 402 V; T_j= 125 °C; (V_DM= 67%

V/µs

voltage

of V_DRM); exponential waveform; gate

open circuit

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 10 A;

dV_com/dt = 20 V/µs; (snubberless

condition); gate open circuit

A/ms

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 10 A;

dV_com/dt = 10 V/µs; gate open circuit

1.5

4.5

A/ms

V_D= 400 V; T_j= 125 °C; I_T(RMS)= 10 A;

dV_com/dt = 1 V/µs; gate open circuit

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BTA310X-600D

3Q Hi-Com Triac

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(1)

L(25°C)

GT(25°C)

(2)

(3)

-50

100

150

100

150

T (°C)

(1) T2- G-

(2) T2+ G+

(3) T2+ G-

Fig. 8. Normalized latching current as a function of

junction temperature

Fig. 7. Normalized gate trigger current as a function of

junction temperature

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003aaj696

(A)

H(25°C)

(1)

(2)

(3)

-50

100

150

T (°C)

(V)

V_o= 1.103 V; R_s= 0.030 Ω

(1) T_j= 125 °C; typical values

(2) T_j= 125 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 9. Normalized holding current as a function of

junction temperature

Fig. 10. On-state current as a function of on-state

voltage

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1.6

GT(25°C)

1.2

0.8

0.4

-50

100

150

T (°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

BTA310X-600D

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11. Package outline

Fig. 12. Package outline TO-220F (SOT186A)

BTA310X-600D

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Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

12. Legal information

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or safety-critical systems or equipment, nor in applications where failure

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liability for inclusion and/or use of WeEn Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Data sheet status

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

specification.

Applications — Applications that are described herein for any of these

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no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

[1] Please consult the most recently issued document before initiating or

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WeEn Semiconductors does not accept any liability related to any default,

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short data sheet, the full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

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Semiconductors.

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Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

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Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

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13. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 6

9. Isolation characteristics...............................................6

10. Characteristics............................................................7

11. Package outline........................................................ 10

12. Legal information..................................................... 11

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 15 September 2018

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BTA310X-600D [WEEN]

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