BYC30WT-600P [WEEN]

Hyperfast power diode;


型号：	BYC30WT-600P
厂家：	WeEn Semiconductors
描述：	Hyperfast power diode
文件：	总11页 (文件大小：528K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYC30WT-600P

Hyperfast power diode

28 August 2018

Product data sheet

1. General description

Hyperfast power diode in a SOT429 (3-lead TO247) plastic package.

2. Features and benefits

•

Low leakage current

•

Low thermal resistance

Low reverse recovery current

Reduces switching losses in associated MOSFET or IGBT

3. Applications

•

Active PFC in air conditioner

Continuous Current Mode (CCM) Power Factor Correction (PFC)

Half-bridge/full-bridge switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol

V_R

Parameter

Conditions

Min

Typ

Max

600

Unit

reverse voltage

I_F(AV)

average forward

current

δ = 0.5; T_mb≤ 115 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward δ = 0.5; t_p= 25 µs; T_mb≤ 115 °C;

current

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave

pulse; Fig. 4

270

300

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave

pulse

Static characteristics

V_F

forward voltage

I_F= 30 A; T_j= 25 °C; Fig. 6

I_F= 30 A; T_j= 150 °C; Fig. 6

2.75

1.8

1.38

Dynamic characteristics

t_rr

reverse recovery time I_F= 1 A; V_R= 30 V; dI_F/dt = 200 A/µs;

T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 125 °C; Fig. 7

WeEn Semiconductors

BYC30WT-600P

Hyperfast power diode

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F= 30 A; V_R= 400 V; dI_F/dt = 500 A/

µs; T_j= 25 °C; Fig. 7

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

anode

cathode

anode

001aaa020

mounting base; connected to

cathode

TO-247 (SOT429)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BYC30WT-600P

TO-247

plastic single-ended through-hole package; heatsink mounted; 1 SOT429

mounting hole; 3 lead TO-247

BYC30WT-600P

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Product data sheet

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WeEn Semiconductors

BYC30WT-600P

Hyperfast power diode

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

V_RRM

repetitive peak reverse

voltage

600

V_RWM

crest working reverse

voltage

600

V_R

reverse voltage

600

I_F(AV)

average forward current δ = 0.5; T_mb≤ 115 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5; t_p= 25 µs; T_mb≤ 115 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave

pulse; Fig. 4

270

300

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave

pulse

T_stg

T_j

storage temperature

junction temperature

-65

175

°C

003aak738

003aak739

δ = 1

a = 1.57

tot

(W)

tot

(W)

1.9

2.2

0.5

2.8

0.2

0.1

4.0

(A)

F(AV)

I_F(AV)= I_F(RMS)× √δ

a = form factor = I_F(RMS)/ I_F(AV)

V_o= 1.798 V; R_s= 0.003 Ω

V_o= 1.798V; R_s= 0.003 Ω

Fig. 2. Forward power dissipation as a function

of average forward current; sinusoidal waveform;

maximum values

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform; maximum

values

BYC30WT-600P

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Product data sheet

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WeEn Semiconductors

BYC30WT-600P

Hyperfast power diode

aaa-010282

aaa-010283

FSM

(A)

F(AV)

(A)

115 °C

FSM

= 25 °C max

j(init)

-50

-5

-4

-3

-2

100

150

200

(°C)

(s)

Fig. 3. Forward current as a function of mounting base

temperature; maximum values

Fig. 4. Non-repetitive peak forward current as a function

of pulse width; sinusoidal waveform; maximum values

BYC30WT-600P

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WeEn Semiconductors

BYC30WT-600P

Hyperfast power diode

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

with heatsink compound; Fig. 5

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

K/W

aaa-010284

th(j-mb)

(K/W)

-1

-2

-3

-4

δ = 0.5

δ = 0.3

δ = 0.1

δ =

δ = 0.05

δ = 0.02

δ = 0.01

single pulse

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

BYC30WT-600P

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WeEn Semiconductors

BYC30WT-600P

Hyperfast power diode

9. Characteristics

Table 6. Characteristics

Symbol

Static characteristics

V_Fforward voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_F= 30 A; T_j= 25 °C; Fig. 6

I_F= 30 A; T_j= 150 °C; Fig. 6

V_R= 600 V; T_j= 25 °C

2.75

1.8

1.38

I_R

reverse current

µA

V_R= 600 V; T_j= 150 °C

Dynamic characteristics

t_rr

reverse recovery time I_F= 1 A; V_R= 30 V; dI_F/dt = 200 A/µs;

T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 125 °C; Fig. 7

I_F= 30 A; V_R= 400 V; dI_F/dt = 500 A/

µs; T_j= 25 °C; Fig. 7

I_RM

peak reverse recovery I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

3.5

7.6

current

µs; T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 125 °C; Fig. 7

Q_r

recovered charge

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 25 °C; Fig. 7

I_F= 30 A; V_R= 200 V; dI_F/dt = 200 A/

µs; T_j= 125 °C; Fig. 7

280

BYC30WT-600P

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Product data sheet

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WeEn Semiconductors

BYC30WT-600P

Hyperfast power diode

003aak742

(A)

time

(1)

(2)

(3)

25 %

100 %

003aac562

(V)

Fig. 7. Reverse recovery definitions; ramp recovery

V_o= 1.798 V; R_s= 0.003 Ω

(1) T_j= 150 °C; typical values

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 6. Forward current as a function of forward voltage

BYC30WT-600P

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BYC30WT-600P

Hyperfast power diode

10. Package outline

Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247

SOT429

20 mm

scale

Dimensions (mm are the original dimensions)

(1)

Unit

7.30

max 5.20 2.10 1.40 2.20 3.20 0.70 20.6 17.68 1.20 15.75 14.22 5.20 1.80

nom

min 4.70 1.90 1.00 1.80 2.80 0.50 20.3 17.28 0.80 15.45 13.82 4.80 1.40

20.90 4.75 3.60 3.70 2.60 6.18

20.40 4.25 3.40 3.50 2.20 5.78

5.45

Note

7.10

1. Basic spacing between centers.

sot429_po

Issue date

References

Outline

version

IEC

European

projection

JEDEC

TO-247

JEITA

04-09-14

13-03-25

SOT429

Fig. 8. Package outline TO-247 (SOT429)

BYC30WT-600P

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BYC30WT-600P

Hyperfast power diode

Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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Data sheet status

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

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BYC30WT-600P

Hyperfast power diode

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Trademarks

Notice: All referenced brands, product names, service names and

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BYC30WT-600P

Hyperfast power diode

12. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 5

9. Characteristics..............................................................6

10. Package outline.......................................................... 8

11. Legal information....................................................... 9

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 28 August 2018

BYC30WT-600P

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Product data sheet

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BYC30WT-600P [WEEN]

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