BYC40W-1200P [WEEN]

Hyperfast power diode;


型号：	BYC40W-1200P
厂家：	WeEn Semiconductors
描述：	Hyperfast power diode
文件：	总11页 (文件大小：409K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYC40W-1200P

Hyperfast power diode

Rev.01 - 14 November 2018

Product data sheet

1. General description

EEPP^TM- Eﬃciency Enhanced Pt Planar rectiﬁer in a TO247-2L plastic package.

2. Features and beneﬁts

•

Fast switching

•

Reduces switching losses with improved lower reverse recovery charge

Soft recovery characteristics

Low thermal resistance

Low leakage current

Planar termination structure

High operating temperature capability (T_{j (max)}= 175°C)

Higher I_FSMcapability

3. Applications

•

Switched-Mode Power Supplies

Power factor correction diode

Uninterrupted Power Supply

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_FRM

repetitive peak reverse

voltage

1200

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 96 °C;

Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5 ; t_p= 25 μs; T_mb≤ 96 °C;

current

square-wave pulse

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

300

330

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 40 A; T_j= 25 °C; Fig. 6

I_F= 40 A; T_j= 150 °C; Fig. 6

2.8

2.2

3.3

Dynamic characteristics

t_rr

reverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

Avalanche energy

E_AS

non-repetitive

avalanche energy

T_j(init)= 25 °C

WeEn Semiconductors

BYC40W-1200P

Hyperfast power diode

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simpliﬁed outline

Graphic symbol

001aaa020

anode

mounting base; connected to

cathod

TO247-2L

6. Ordering information

Table 3. Ordering information

Type number

Package

name

Orderable part number Packing

method

Small packing Package

Package

issue date

quantity

version

BYC40W-1200P

TO247-2L BYC40W-1200PQ

Tube

TO247A-2L 23-Jun-2017

7. Marking

Table 4. Marking codes

Type number

Marking codes

BYC40W-1200P

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Product data sheet

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BYC40W-1200P

Hyperfast power diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

V_RRM

repetitive peak reverse

voltage

1200

V_RWM

crest working reverse

voltage

1200

V_R

reverse voltage

1200

I_F(AV)

average forward current

δ = 0.5 ; square-wave pulse; T_mb≤ 96 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5 ; t_p= 25 μs; T_mb≤ 96 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

300

330

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

storage temperature

junction temperature

-65 to 175

175

°C

stg

T_j

amf15-002

amf15-001

160

tot

(W)

200

tot

(W)

δ = 1

a = 1.57

160

1.9

120

2.2

0.5

2.8

4.0

120

0.2

0.1

(A)

F(AV)

I_F(AV)= I_F(RMS)× √δ

V_o= 1.661 V; R_s= 0.0206 Ω

a = form factor = I_F(RMS)/ I_F(AV)

Vo = 1.661 V; Rs = 0.0206 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform; maximum

values

Fig. 2. Forward power dissipation as a function

of average forward current; sinusoidal waveform;

maximum values

BYC40W-1200P

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Product data sheet

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BYC40W-1200P

Hyperfast power diode

amf15-004

amf15-003

FSM

F(AV)

(A)

96°C

FSM

= 25 °C max

j(init)

-5

-4

-3

-2

-50

100

150

200

(°)

(s)

Fig. 3. Forward current as a function of mounting base

temperature; maximum values

Fig. 4. Non-repetitive peak forward current as a function

of pulse width; sinusoidal waveform; maximum values

BYC40W-1200P

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BYC40W-1200P

Hyperfast power diode

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

Fig. 5

0.6

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

in free air

K/W

amf15-005

th(j-mb)

(K/W)

-1

δ = 0.5

δ = 0.3

δ = 0.1

δ = 0.05

δ = 0.02

-2

-3

δ =

δ = 0.01

single pulse

-6

-5

-4

-3

-2

-1

(s)

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

BYC40W-1200P

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BYC40W-1200P

Hyperfast power diode

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward current

I_F= 40 A; T_j= 25 °C; Fig. 6

I_F= 40 A; T_j= 150 °C; Fig. 6

V_R= 1200 V; T_j= 25 °C

V_R= 1200 V; T_j= 150 °C

2.8

2.2

3.3

I_R

reverse current

250

μA

Dynamic characteristics

Q_r

reverse charge

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; Fig. 7

863

2314

2637

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 125 °C; Fig. 7

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 150 °C; Fig. 7

t_rr

reverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; Fig. 7

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 125 °C; Fig. 7

172

186

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 150 °C; Fig. 7

I_RM

peak reverse recovery I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

current

T_j= 25 °C; Fig. 7

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 125 °C; Fig. 7

I_F= 40 A; V_R= 400 V; dI_F/dt = 500 A/μs;

28.4

T_j= 150 °C; Fig. 7

Avalanche energy

E_AS

non-repetitive

avalanche energy

T_j(init)= 25 °C

BYC40W-1200P

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Product data sheet

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BYC40W-1200P

Hyperfast power diode

amf15-006

(A)

(1)

(2)

(3)

time

25 %

100 %

003aac562

(V)

V_o= 1.661 V; R_s= 0.0206 Ω

(1) T_j= 150 °C; typical values

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 7. Reverse recovery deﬁnitions; ramp recovery

Fig. 6. Forward current as a function of forward voltage

BYC40W-1200P

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BYC40W-1200P

Hyperfast power diode

11. Package outline

TO247-2L

Plastic single-ended through-hole package; heatsink mounted;1 mounting hole; 2 leads TO-247

Note2

Note1

Note:

1. Mold resin protrusion.

2. Metal exposed with Sn plating.

BYC40W-1200P

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BYC40W-1200P

Hyperfast power diode

Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

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12. Legal information

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Data sheet status

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

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Applications — Applications that are described herein for any of these

products are for illustrative purposes only. WeEn Semiconductors makes

no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

lease consult the most recently issued document before initiating or

completing a design.

]

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

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BYC40W-1200P

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BYC40W-1200P

Hyperfast power diode

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

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Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

BYC40W-1200P

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BYC40W-1200P

Hyperfast power diode

13. Contents

1. General description.......................................................1

2. Features and beneﬁts ...................................................1

3. Applications...................................................................1

4. Quick reference data.....................................................1

5. Pinning information.......................................................2

6. Ordering information.....................................................2

7. Marking...........................................................................2

8. Limiting values ..............................................................3

9. Thermal characteristics................................................5

10. Characteristics.............................................................6

11. Package outline ...........................................................8

12. Legal information ........................................................9

13. Contents.....................................................................11

For more information, please visit: http://www.ween-semi.com

For sales oﬃce addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 14 November 2018

BYC40W-1200P

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BYC40W-1200P [WEEN]

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