BYT79X-600P [WEEN]
Ultrafast recovery diode;
| 型号： | BYT79X-600P |
| 厂家： | 
WeEn Semiconductors |
| 描述： | Ultrafast recovery diode |
| 文件： | 总10页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT79X-600P
Ultrafast recovery diode
19 October 2017
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (TO-220F) plastic package.
2. Features and benefits
•
Low on-state loss
•
•
•
•
•
•
Ultra low leakage
Low switching loss
Fast switching
Soft recovery characteristic
High thermal cycling performance
Low thermal resistance
3. Applications
•
•
Home appliance power supply
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
VR
Parameter
Conditions
Min
Typ
Max
600
15
Unit
V
reverse voltage
DC
-
-
-
-
IF(AV)
average forward
current
δ = 0.5 ; Th ≤ 71 °C; square-wave;
Fig. 1; Fig. 2; Fig. 3
A
IFRM
IFSM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 71 °C;
-
-
-
-
-
-
30
A
A
A
current
square-wave
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sinusoidal
waveform; Fig. 4
150
165
tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal
waveform
Static characteristics
VF
forward voltage
IF = 15 A; Tj = 25 °C; Fig. 6
IF = 15 A; Tj = 125 °C; Fig. 6
-
-
1.1
1.38
1.25
V
V
0.96
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
-
50
60
ns
WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
K
cathode
mb
K
A
001aaa020
2
A
anode
mb
n.c.
mounting base; isolated
1
2
TO-220F (SOD113)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BYT79X-600P
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
SOD113
7. Marking
Table 4. Marking codes
Type number
Marking code
BYT79X-600P
BYT79X-600P
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
2 / 10
WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-
600
V
VRWM
crest working reverse
voltage
-
600
V
VR
reverse voltage
DC
-
-
600
15
V
A
IF(AV)
average forward current δ = 0.5 ; Th ≤ 71 °C; square-wave; Fig. 1;
Fig. 2; Fig. 3
IFRM
IFSM
repetitive peak forward
current
δ = 0.5 ; tp = 25 µs; Th ≤ 71 °C; square-
wave
-
-
-
30
A
A
A
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sinusoidal
waveform; Fig. 4
150
165
tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal
waveform
Tstg
Tj
storage temperature
junction temperature
-65
-
175
175
°C
°C
aaa029-001
aaa029-002
30
25
20
15
10
5
25
δ = 1
P
P
tot
(W)
tot
(W)
a = 1.57
20
15
10
5
0.5
1.9
2.2
2.8
0.2
0.1
4.0
0
0
0
4
8
12
16
20
F(AV)
24
(A)
0
2.5
5
7.5
10 12.5
I (A)
F(AV)
15
I
IF(AV) = IF(RMS) × √δ
Vo = 1.055 V; Rs = 0.013 Ω
a = form factor = I F(RMS) / IF(AV)
Vo = 1.055 V; Rs = 0.013 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
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WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
aaa029-003
aaa029-004
3
20
10
I
I
F(AV)
(A)
FSM
(A)
71°C
15
10
5
2
10
I
F
I
FSM
t
t
p
T
j(init)
= 25 °C max
0
-50
10
10
-5
-4
-3
-2
0
50
100
150
(°C)
200
10
10
10
T
t (s)
p
h
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
©
BYT79X-600P
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
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WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 5
-
-
4.8
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
55
-
K/W
aaa029-005
10
Z
th(j-h)
(K/W)
1
-1
-2
-3
10
10
10
P
t
t
p
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
t
p
(s)
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse width
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from
all pins to external heatsink; sinusoidal
-
-
2500
V
waveform; clean and dust free
Cisol
isolation capacitance
from cathode to external heatsink
-
10
-
pF
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
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WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
11. Characteristics
Table 8. Characteristics
Symbol
Static characteristics
VF forward voltage
Parameter
Conditions
Min
Typ
Max
Unit
IF = 15 A; Tj = 25 °C; Fig. 6
IF = 15 A; Tj = 125 °C; Fig. 6
VR = 600 V; Tj = 25 °C
-
-
-
-
1.1
0.96
1
1.38
1.25
10
V
V
IR
reverse current
µA
µA
VR = 600 V; Tj = 125 °C
80
200
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
-
-
-
-
50
3
60
ns
A
IRM
Qr
peak reverse recovery IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
-
current
Tj = 100 °C
recovered charge
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 7
60
60
-
nC
nC
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; Fig. 7
110
aaa029-006
dl
F
30
25
20
15
10
5
I
F
I
F
dt
(A)
t
rr
time
25 %
(2)
(3)
(1)
100 %
Q
r
I
I
RM
R
003aac562
0
0
0.5
1
1.5
F
2
V
(V)
Fig. 7. Reverse recovery definitions; ramp recovery
Vo = 1.055 V; Rs = 0.013 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
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WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
12. Package outline
Plastic single- ended package; isolated heatsink mounted;
1 mounting hole; 2- lead TO- 220 ‘full pack’
SOD113
A
A
E
P
1
(2)
z
q
m
(4)
T
D
H
E
L
2
(3)
j
(1)
L
1
(3)
k
Q
L
1
2
b
b
w
c
1
e
0
5
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
H
max
L
2
max
E
(3)
j
(3)
(1)
(4)
(2)
A
A
b
b
1
c
D
E
e
k
L
L
1
m
P
Q
q
T
w
z
1
max 4.6 2.9 0.9 1.1 0.7 15.8 10.3
mm nom
min
2.7 0.6 14.4 3.3
1.7 0.4 13.5 2.8
6.5 3.2 2.6
6.3 3.0 2.3
0.8
5.08 19.0
0.5
2.6 2.55 0.4
4.0 2.5 0.7 0.9 0.4 15.2 9.7
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
sod113_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
07-06-08
15-08-28
SOD113
2-lead TO-220F
Fig. 8. Package outline TO-220F (SOD113)
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
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WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
Right to make changes — WeEn Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
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13. Legal information
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Data sheet status
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
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no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1] Please consult the most recently issued document before initiating or
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associated with their applications and products.
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[3] The product status of device(s) described in this document may have
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WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Product specification — The information and data provided in a Product
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©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
8 / 10
WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
9 / 10
WeEn Semiconductors
BYT79X-600P
Ultrafast recovery diode
14. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Isolation characteristics.............................................5
11. Characteristics............................................................6
12. Package outline.......................................................... 7
13. Legal information....................................................... 8
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 19 October 2017
©
BYT79X-600P
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
19 October 2017
10 / 10
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