B120N-G [WEITRON]

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),;
B120N-G
型号: B120N-G
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),

文件: 总3页 (文件大小:100K)
中文:  中文翻译
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B120N/B140N  
B160N  
Surface Mount Schottky Barrier Diodes  
* “G” Lead(Pb)-Free  
REVERSE VOLTAGE  
20-60Volts  
FORWARD CURRENT  
1.0 Ampere  
Features:  
* Surface Mounted Applications  
* Metal-Semiconductor Junction with Guardring  
* Epitaxial Construction  
* Low Leakage Current  
* High Current Capability  
* Plastic Material Has UL Flammability Classification 94V-0  
* For Use in, High Frequency Inverters,  
Free Wheeling, and Polarity Protection Applications  
SOD-323F  
(0805)  
Mechanical Data  
* Case : Molded Plastic, SOD-323F(0805)  
* Terminals : Solder Plated, Solderable per ML-STD-750 Medthod 2026  
* Polarity :Indicated By Cathode Band  
* Shipped in 8mm Tape, 3000 Pcs per 7 Inch Reel  
* Weight: 0.0085 grams  
SOD-323F Outline Dimension  
unit:mm  
B
C
SOD-323F  
Dim  
Max  
1.35  
Min  
1.15  
A
A
B
C
E
H
J
2.30  
2.70  
E
0.30(TYP)  
-
1.80  
2.20  
J
0.90(TYP)  
1.10  
-
H
0.90  
H
WEITRON  
http://www.weitron.com.tw  
B120N/B140N  
B160N  
Maximum Ratings and Electrical Characteristics  
Rating 25 C Ambient Temperature Unless Otherwise Specified.  
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.  
For Capacitive Load, Derate Current by 20%.  
Symbol  
B120N B140N  
B160N  
60  
Characteristics  
Unit  
V
Maximum Recurrent Peak Reverse Voltage  
40  
20  
V
V
V
RRM  
RMS  
DC  
Maximum RMS Voltage  
28  
14  
42  
V
Maximum DC Blocking Voltage  
Maximum Average Forward (FIG1)  
Peak Forward Surge Current,  
8.3 ms Single Half Sine-Wave  
Superimposed on Rated Load (JEDEC Method)  
Maximum Instantaneous  
40  
20  
60  
V
I
(AV)  
1.0  
A
F
30  
A
I
FSM  
V
F
0.55  
@ T  
A
=25 C  
=25 C  
=125 C  
0.70  
V
Maximum DC Reverse Current @T  
A
0.5  
I
R
mA  
At Rated DC Blocking Voltage @T  
Typical Junction Capacitance (1)  
Typical Thermal Resistance (2)  
Operating Temperature Range  
Storage Temperature Range  
A
10  
C
J
120(TYP)  
90(TYP)  
PF  
R
θ
JC  
C/W  
C
TJ  
-55 to+125  
-55 to+150  
TSTG  
C
NOTES:  
1. Measured at 1.0MHz applied reverse voltage of 4.0V DC.  
2.Thermal Resistance Junction to case.  
Device Marking  
B120N=12 B140N=14 B160N=16  
WEITRON  
http://www.weitron.com.tw  
B120N/B140N  
B160N  
1.2  
1.0  
0.8  
0.6  
50  
10  
3.0  
1.0  
0.4  
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
Tj=25 C  
AMBIENT TEMPERATURE,( C)  
Pulse Width 300us  
1% Duty Cycle  
FIG.1 Typical Forward Current Derating Curve  
0.1  
.01  
30  
.1 .3  
.5  
.7  
.9  
1.1 1.3 1.5  
24  
18  
FORWARD VOLTAGE,(V)  
FIG.2 Typical Forward Characteristics  
8.3ms Single Half  
Sine Wave  
Tj=25 C  
12  
6
JEDEC method  
0
50  
1
5
10  
100  
NUMBER OF CYCLES AT 60Hz  
100  
10  
FIG.3 Maximum Non-Repetitive Forward  
Surge Current  
350  
300  
250  
200  
1.0  
Tj=75 C  
150  
100  
50  
.1  
Tj=25 C  
.01  
0
0
20 40 60 80 100 120 140  
.01  
.05  
.1  
.5  
1
5
10  
50 100  
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)  
REVERSE VOLTAGE,(V)  
FIG.5 Typcial Reverse Characteristics  
FIG.4 Typical Junction Capacitance  
WEITRON  
http://www.weitron.com.tw  

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