BC847BT [WEITRON]
General Purpose Transistor NPN Silicon; 通用晶体管NPN硅
| 型号： | BC847BT |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | General Purpose Transistor NPN Silicon |
| 文件： | 总4页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC847AT/BT/CT
COLLECTOR
3
General Purpose Transistor
NPN Silicon
3
1
2
1
BASE
SC-89
(SOT-523F)
2
EMITTER
( T =25 C unless otherwise noted)
A
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
45
50
Unit
V
CEO
Vdc
Vdc
Vdc
V
CBO
6.0
V
EBO
mAdc
Collector Current-Continuous
I
100
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
P
D
150
2.4
mW
mW/ C
(1)T =25 C
A
Derate above 25 C
(1)
R
833
C/W
Thermal Resistance, Junction to Ambient
JA
T
-55 to +150
Junction and Storage,Temperature Range
J,Tstg
C
Device Marking
BC847A=1E; BC847B=1F;BC847C=1G
1.FR-5=1.0 x 0.75 x 0.062 in.
WEITR O N
htt p: // w ww . w e itr on. c om. tw
BC847AT/BT/CT
WE ITR ON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
Off Characteristics
Collector-Emitter Breakdown Voltage
(I = 10mA)
C
-
-
-
-
V(BR)CEO
V(BR)CES
V(BR)CBO
45
50
V
V
Collector-Emitter Breakdown Voltage
(I =10 uA ,V =0)
C EB
Collector-Base Breakdown Voltage
(I =10 uA)
C
V
V
-
-
-
50
Emitter-Base Breakdown Voltage
(I =1.0 uA)
E
V(BR)EBO
ICBO
-
6.0
-
Collector Cutoff Current (V =30V)
CB
15
5.0
nA
mA
-
(V =30V,T =150 C)
CB
A
On Characteristics
DC Current Gain
BC847A
BC847B
BC847C
-
-
-
-
-
-
-
90
150
270
hFE
(I = 10uA,V =5.0V)
C
CE
110
200
420
220
450
800
(I = 2.0mA,V =5.0V)
CE
BC847A
BC847B
BC847C
C
180
290
520
Collector-Emitter Saturation Voltage
V
-
-
-
-
0.25
0.6
(I = 10mA, IB=0.5mA)
C
VCE(sat)
VBE(sat)
(I = 100mA, I =5.0mA)
C
B
Base-Emitter Saturation Voltage
(I = 10mA, I =0.5mA)
V
V
-
-
0.7
0.9
-
-
C
C
B
B
(I = 100mA, I =5.0mA)
Base-Emitter On Voltage
(I = 2.0mA,V =5.0V)
VBE(on)
580
-
660
-
700
770
C
CE
(I = 10mA,VC =5.0V)
C
E
Small-signal Characteristics
Current-Gain-Bandwidth Product
(I = 10mA,VCE= 5.0Vdc, f=100MHz)
C
f
-
-
-
T
100
-
MHz
pF
Output Capacitance
(V = 10V, f=1.0MHz)
CB
C
4.5
obo
Noise Figure
dB
NF
(I = 0.2mA,V = 5.0Vdc,
C
CE
-
-
-
-
Rs=2.0 k
,
10
f=1.0 kHz, BW=200Hz)
WEITRON
http://www.weitron.com.tw
BC847AT/BT/CT
WE ITR ON
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
T =25 C
A
V
=10V
CE
T =25 C
A
V
@I /B =10
C C
BE(sat)
1.0
0.8
V
@V = 10V
BE(ON) CE
0.6
0.4
0.3
V
@I /B =10
C C
(sat)
CE
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
FIG.1 Normalized DC Current Gain
I
, COLLECTOR CURRENT (mAdc)
C
FIG.2 "Saturation" And "On" Voltage
1.0
1.2
2.0
1.6
1.2
0.8
0.4
0
T =25 C
A
-55 C to +125 C
1.6
2.0
2.4
2.8
I
= 200mA
C
I
=
I
= 100mA
C
C
I
=-50mA
C
10mA
I
= 20mA
C
0.2
1.0
10
100
0.02
0.1
1.0
10
20
IC, COLLECTOR CURRENT (mA)
I , BASE CURRENT (mA)
FIG.3 Collector Saturation Region
B
FIG.4 Base-Emitter Temperature Coefficient
10
400
300
7.0
T =25 C
A
200
5.0
C
V
CE=10V
ib
TA= 25 C
100
80
3.0
2.0
60
C
ob
40
30
1.0
0.4
20
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V
, REVERSE VOLTAGE (VOLTS)
I
COLLECTOR CURRENT (mAdc)
R
C,
FIG.5 Capacitances
FIG.6 Current-Gain- Bandwidth Product
WEITRON
http://www.weitron.com.tw
BC847AT/BT/CT
WE ITR ON
SC-89 Outline Demensions
Unit:mm
A
SC-89
Dim
A
B
C
D
Min
Nom
1.60
0.85
0.70
0.28
Max
1.70
0.95
0.80
0.33
3
1.50
0.75
0.60
0.23
B
S
TOP VIE W
2
1
K
G
G
J
K
M
N
0.50BSC
0.15
0.40
---
D
0.20
0.50
10
10
1.70
0.10
0.30
---
---
1.50
N
M
---
1.60
J
S
C
WEITRON
http://www.weitron.com.tw
相关型号：
BC847BT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明