BC849B [WEITRON]

General Purpose Transistor NPN Silicon; 通用晶体管NPN硅


型号：	BC849B
厂家：	WEITRON TECHNOLOGY
描述：	General Purpose Transistor NPN Silicon 通用晶体管NPN硅晶体晶体管光电二极管 IOT
文件：	总5页 (文件大小：272K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC846A/B-BC847A/B/C

BC848A/B/C-BC849B/C

BC850B/C

General Purpose Transistor

NPN Silicon

COLLECTOR

MARKING DIAGRAM

XX = Device

Code (See

Table Below)

BASE

SOT-23

*Moisture Sensitivity Level: 1

*ESD Rating - Human Body Model:>4000V

-Machine Model:>400V

EMITTER

( T =25 C unless otherwise noted)

M aximum R atings

Rating

Symbol

CEO

Value

Unit

Collector-Emitter Voltage

BC846

Vdc

BC847, BC850

BC848, BC849

Collector-Base Voltage

BC846

BC847, BC850

BC848, BC849

Vdc

6.0

5.0

CBO

Emitter-Base VOltage

BC846

BC847, BC850

BC848, BC849

EBO

Collector Current-Continuous

mAdc

100

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

mW/ C

(Note 1.)T =25 C

225

1.8

Derate above 25 C

C/W

Thermal Resistance, Junction to Ambient

(Note 1.)

(Note 2.)

556

Total Device Dissipation Alumina

Substrate, (Note 2.) T =25 C

Derate above 25 C

300

2.4

mW/ C

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature Range

417

J,Tstg

-55 to +150

Device Marking

BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;

BC848B;=1K; BC848C=1L;BC849B=2B; BC849C=2C; BC850B=2F; BC850C=2G

1.FR-5=1.0 x 0.75 x 0.062 in.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina

WEITRO N

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BC846A/B-BC847A/B/C

BC848A/B/C-BC849B/C

BC850B/C

WE ITR ON

(TA=25 C Unless Otherwise noted)

Electrical Characteristics

Typ

Characteristics

Symbol

Unit

Min

Max

Off Characteristics

BC846A,B

BC847A,B,C BC850B.C

BC848A,B,C BC849B,C

Collector-Emitter Breakdown Voltage

(I = 10mA)

V(BR)CEO

V(BR)CES

Collector-Emitter Breakdown Voltage

(I =10 µA ,V =0)

BC846A,B

BC847A,B,C BC850B.C

BC848A,B,C BC849B,C

Collector-Base Breakdown Voltage BC846A,B

V(BR)CBO

V(BR)EBO

(I =10 µA)

BC847A,B,C BC850B.C

BC848A,B,C BC849B,C

BC846A,B

BC847A,B,C BC850B.C

BC848A,B,C BC849B,C

Emitter-Base Breakdown Voltage

(I =1.0 µA)

6.0

5.0

Collector Cutoff Current (V =30V)

5.0

ICBO

hFE

(V =30V, T =150 C)

On Characteristics

DC Current Gain

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC847C, BC848C

150

270

(I = 10µA, V =5.0V)

110

200

220

450

(I = 2.0mA, V =5.0V)

C CE

BC846A, BC847A, BC848A

BC846B, BC847B, BC848B

BC849B. BC850B,

180

290

420

800

BC847C, BC848C, BC849C, BC850C

520

Collector-Emitter Saturation Voltage

0.25

0.6

(I = 10mA, IB=0.5mA)

VCE(sat)

VBE(sat)

(I = 100mA, I =5.0mA)

Base-Emitter Saturation Voltage

(I = 10mA, I =0.5mA)

-0.7

-0.9

(I = 100mA, I =5.0mA)

Base-Emitter On Voltage

(I = 2.0mA, V =5.0V)

VBE(on)

580

660

700

770

(I = 10mA, VC =5.0V)

Small-signal Characteristics

Current-Gain-Bandwidth Product

(I = 10mA, VCE= 5.0Vdc, f=100MHz)

100

MHz

Output Capacitance

4.5

obo

(V = 10V, f=1.0MHz)

Noise Figure

(I = 0.2mA, V = 5.0Vdc,

BC846A,B, BC847A,B,C, BC848A,B,C,

BC849B,C, BC850B,C

Rs=2.0 k

4.0

f=1.0 kHz, BW=200Hz)

WEITRON

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BC846A/B-BC847A/B/C

BC848A/B/C-BC849B/C

BC850B/C

WE ITR ON

BC847/BC848/BC849/BC850 Series

1.0

2.0

1.5

T =25 C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

=10V

T =25 C

@I /B =10

C C

BE(sat)

1.0

0.8

@V = 10V

BE(ON)

0.6

0.4

0.3

@I /B =10

C C

(sat)

0.2

0.1

0.2

0.5 1.0

2.0

5.0 10

50 100 200

0.2 0.3 0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 50 70 100

IC, COLLECTOR CURRENT (mAdc)

Figure1.Normalized DC Current Gain

, COLLECTOR CURRENT (mAdc)

Firure2. "Saturation" And "On" Voltage

1.0

1.2

2.0

1.6

1.2

0.8

0.4

T =25 C

-55 C to +125 C

1.6

2.0

2.4

2.8

= 200mA

= 100mA

=-50mA

10mA

= 20mA

0.2

1.0

100

0.02

0.1

1.0

IC, COLLECTOR CURRENT (mA)

I , BASE CURRENT (mA)

Figure 3. Collector Saturation Region

Figure 4. Base-Emitter Temperature Coefficient

400

300

7.0

T =25 C

200

5.0

CE=10V

TA= 25 C

100

3.0

2.0

1.0

0.4

0.6 0.8 1.0

2.0

4.0

6.0 8.0 10

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

, REVERSE VOLTAGE (VOLTS)

COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. Current-Gain- Bandwidth Product

WEITRON

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BC846A/B-BC847A/B/C

BC848A/B/C-BC849B/C

BC850B/C

WE ITR ON

BC846 Series

1.0

T =25 C

=5V

=25 C

0.8

0.6

0.4

0.2

@I /I =10

BE(sat)

2.0

1.0

0.5

@V =-5.0V

0.2

@I /I =10

CE(sat)

0.1 0.2

1.0

100

0.2

0.5

1.0

2.0

5.0

50 100 200

, COLLECTOR CURRENT (mA)

, COLLECTOR CURRENT(mA)

Figure 7.DC Current Gain

Figure 8. "ON" Voltage

1.0

2.0

T =25 C

1.4

1.8

2.2

2.6

3.3

1.6

1.2

0.8

0.4

20mA

50mA

100mA

200mA

for V

-55 C to 125 C

IC=

10mA

0.2

0.5

1.0

-2.0

5.0

100

200

0.02

0.05 0.1

0.2

0.5 1.0

2.0

5.0

, COLLECTOR CURRENT (mA)

, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

Figure 10. Base-Emitter Temperature Coefficient

=5.0V

T =25 C

500

T =25 C

200

100

8.0

6.0

4.0

2.0

1.0

5.0 10

50 100

0.1 0.2

0.5

1.0 2.0

5.0

50 100

, COLLECTOR CURRENT (mA)

, REVERSE VOLTAGE (VOLTS)

Figure 12.Current-Gain-Bandwidth Product

Figure 11. Capacitance

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BC846A/B-BC847A/B/C

BC848A/B/C-BC849B/C

BC850B/C

SOT-23 Package Outline Dimensions

Unit:mm

Dim

Min Max

0.35 0.51

1.19 1.40

2.10 3.00

0.85 1.05

0.46 1.00

1.70 2.10

2.70 3.10

0.01 0.13

0.89 1.10

0.30 0.61

0.076 0.25

TOP VIE W

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