IRF640 [WEITRON]
N-Channel Enhancement Mode POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | IRF640 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode POWER MOSFET |
| 文件： | 总6页 (文件大小：1067K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF640
N-Channel Enhancement
Mode POWER MOSFET
DRAIN CURRENT
18 AMPERES
DRAIN
3
DRAIN SOURCE VOLTAGE
200 VOLTAGE
P b
Lead(Pb)-Free
1 GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
2
SOURCE
RDS(ON)<0.18Ω@VGS=10V
1
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristics
* High Input Impedance
2
3
1. GATE
2. DRAIN
3. SOURCE
TO-220AB
Maximum Ratings(T =25 C Unless Otherwise Specified)
a
Rating
Symbol
Value
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
200
20
V
Continuous Drain Current, (V @10V, TC=25˚C)
GS
18
11
ID
, (V @10V, TC=100˚C)
GS
A
IDM
PD
Pulsed Drain Current
72
125
1
Total Power Dissipation(TC=25˚C)
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
W
RθJC
RθJA
˚C/W
62
˚C/W
˚C
+150
T
J
T
stg
˚C
-55~+150
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IRF640
Electrical Characteristics(TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
I =250µA,V =0
-
-
BVDSS
200
D
GS
V
Gate-Source Threshold Voltage
2.0
-
-
-
4.0
VGS(Th)
I =250µA,V =V
D
DS GS
Gate-Source Leakage current
V =±20V
GS
±±00
nA
IGSS
Drain-SourceLeakage Current(Tj=25˚C)
-
-
-
-
25
V =200V,V =0
DS
GS
IDSS
μA
Drain-SourceLeakage Current(Tj=±25˚C)
V =±60V,V =0
250
DS
GS
Static Drain-Source On-Resistance
I =±±A,V =±0V
RDS(on)
-
-
0.±8
Ω
D
GS
Forward Transconductance
I =±±A,V =50V
gfs
6.7
-
-
-
-
S
D
DS
Forward On Voltage
2.0
V
VSD
I =±8A, VGS=0V,Tj=25˚C
S
Dynamic
Input Capacitance
-
±300
-
Ciss
V =0V,V =25V,f=±.0MHz
GS
DS
Output Capacitance
V =0V,V =25V,f=±.0MHz
-
-
430
±30
-
-
pF
Coss
GS
DS
Reverse Transfer Capacitance
V =0V,V =25V,f=±.0MHz
Crss
GS
DS
Switching
Turn-on Delay Time
ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω
-
-
-
-
-
-
2±
77
68
Td(on)
Tr
Rise Time
ID=±8A, VDD=±00V,RGS=9.±Ω,RL=5.4Ω
ns
Turn-off Delay Time
ID=±8A, VDD=±00V,RGS=9.±Ω,RL=5.4Ω
Td(off)
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IRF640
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IRF640
Characteristics Curve
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IRF640
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IRF640
TO-220AB Outline Dimensions
Unit:mm
TO-220AB
Dim
A
B
C
D
E
F
H
I
Min
14.68
9.78
5.02
13.06
3.57
2.42
0.72
Max
15.32
10.42
6.52
14.62
4.07
I
B
O
DIA
J
M
2
C
A
1 2 3
2.66
0.96
E
K
D
4.98
1.36
2.97
0.55
2.98
3.90
4.22
1.14
2.20
J
K
L
M
O
H
0.33
2.48
3.70
L
F
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04-Nov-08
WEITRON
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