MMBD4448HTC [WEITRON]

Surface Mount Switching Diodes; 表面贴装开关二极管
MMBD4448HTC
型号: MMBD4448HTC
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

Surface Mount Switching Diodes
表面贴装开关二极管

整流二极管 开关
文件: 总3页 (文件大小:1368K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBD4448HT/HTA  
HTC/HTS  
Surface Mount Switching Diodes  
SWITCHING DIODES  
250 mAMPERES  
80 VOLTS  
P b  
Lead(Pb)-Free  
Features:  
* Ultra-Small Surface Mount Package  
* Fast switching Speed  
* For General Purpose Switching Applications  
* High Conductance  
3
1
2
Mechanical Data:  
SOT-523(SC-75)  
* Terminals: Solderable per MIL-STD-202, Method 208  
* Polarity: See Diagrams Page.2  
* Marking: See Diagrams Page.2  
* Weight: 0.002 grams (approx)  
Unit:mm  
SOT-523 Outline Dimensions (SC-75)  
SOT-523  
A
Dim  
A
B
C
D
Min  
0.30  
0.70  
1.45  
-
0.15  
0.80  
1.40  
0.00  
0.70  
0.37  
0.10  
Max  
0.50  
0.90  
1.75  
0.50  
0.40  
1.00  
1.80  
0.10  
1.00  
0.48  
0.25  
B
C
TOP VIEW  
D
G
E
E
G
H
J
K
L
H
K
L
J
M
M
WEITRON  
http://www.weitron.com.tw  
1/3  
31-May-07  
MMBD4448HT/HTA  
HTC/HTS  
Maximum Ratings (T =25°C Unless otherwise noted)  
A
Symbol  
Unit  
Characteristic  
Value  
V
100  
V
RM  
Non-Repetitve Peak Reverse Voltage  
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
V
RRM  
V
80  
V
R
Forward Continuous Current  
I
500  
250  
mA  
mA  
FM  
Average Rectiꢀed Output Current  
I
O
Non-Repetitive Peak Forward Surge Current  
4.0  
2.0  
I
A
@t=1.0µS  
@t=1.0S  
FSM  
P
d
150  
833  
mW  
°C/W  
°C  
Power Dissipation  
R
θJA  
Thermal Resistance  
T
j
Junction Temperature Range  
Storage Temperature Range  
+150  
T
STG  
-65 to + 150  
°C  
Electrical Characteristics (T =25˚C Unless otherwise noted)  
A
Symbol  
Characteristic  
Min  
Max  
Unit  
Reverse Breakdown Voltage  
I =2.5µA  
R
-
V
80  
V
(BR)R  
Forward Voltage  
I =5mA  
720  
855  
1000  
1250  
620  
F
V
F
T
I =10mA  
F
mV  
I =100mA  
F
I =150mA  
F
Total Capacitance  
-
-
3.5  
pF  
µA  
nS  
C
V =6V, f=1.0MHz  
R
Reverse Current  
0.1  
0.025  
V =70V  
I
R
R
V =20V  
R
Reverse Recover Time  
T
rr  
4.0  
-
V =6V, I =5mA  
R
F
Device Marking  
Item  
Marking  
Eqivalent Circuit diagram  
3
3
3
3
1
MMBD4448HT  
A3  
1
2
MMBD4448HTS  
MMBD4448HTC  
MMBD4448HTA  
AB  
A7  
A6  
1
2
1
2
WEITRON  
http://www.weitron.com.tw  
2/3  
31-May-07  
MMBD4448HT/HTA  
HTC/HTS  
Electrical Characteristic curves(T =25˚C)  
A
WEITRON  
http://www.weitron.com.tw  
31-May-07  
3/3  

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