MMBTA42 [WEITRON]

High-Voltage NPN Transistor Surface Mount; 高压NPN晶体管表面贴装


型号：	MMBTA42
厂家：	WEITRON TECHNOLOGY
描述：	High-Voltage NPN Transistor Surface Mount 高压NPN晶体管表面贴装晶体晶体管光电二极管高压放大器 PC
文件：	总4页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMBTA42

COLLECTOR

High-Voltage NPN Transistor

Surface Mount

SOT-23

BASE

EMITTER

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Symbol

Value

Unit

Vdc

mAdc

300

5.0

CEO

CBO

EBO

Collector Current-Continuous

500

Thermal Characteristics

Characteristics

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

225

1.8

TA=25 C

Derate above 25 C

mW/ C

C/W

Thermal Resistance, Junction to Ambient

556

300

Total Device Dissipation

(2)

Alumina Substrate,

Derate above 25 C

TA=25 C

2.4

mW/ C

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

417

J,Tstg

-55 to +150

Device Marking

MMBTA42=1D

(TA=25 C Unless Otherwise noted)

Electrical Characteristics

Characteristics

Symbol

Unit

Min

Max

Off Characteristics

(3)

Collector-Emitter Breakdown Voltage (I =1.0mAdc.IB=0)

300

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

Collector-Base Breakdown Voltage (I =100 Adc, I =0)

Vdc

Emitter-Base Breakdown Voltage (I =10 Adc, I =0)

5.0

0.25

0.1

Base Cutoff Current (V =200 Vdc, I =0)

Adc

CBO

Emitter Cutoff Current V =3V, I =0

EBO

1.FR-5=1.0 x 0.75 x 0.062 in.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.

3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.

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WE ITR ON

MMBTA42

Electrical Characteristics (T =25 C unless otherwise noted) (Countinued)

Symbol

Unit

Max

Characteristics

Min

On Characteristics

DC Current Gain

(I = 1.0 mAdc, V =10Vdc)

100

FE(1)

FE(2)

FE(3)

(I = 10 mAdc, V = 10Vdc)

200

(I = 30 mAdc, V = 10Vdc)

C CE

(3)

Collector-Emitter Saturation Voltage

(I = 20 mAdc, I = 2.0 mAdc)

0.5

0.9

Vdc

CE(sat)

(3)

Base-Emitter Saturation Voltage

(I = 20 mAdc, I = 2.0 mAdc)

BE(sat)

Current-Gain-Bandwidth Product

(I = 10 mAdc, V = 5 Vdc, f=130MHz)

MHz

-50

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MMBTA42

Typical Characteristics

120

100

Tj=+125 C

25 C

-55 C

0.1

1.0

100

IC, COLLECTOR CURRENT (mA)

Figure ,1 DC Current Gain

1.4

1.2

1.0

0.8

0.6

0.4

0.2

V_{CE(sat)@25 C, ICIB = 10}

V_{CE(sat)@125 C, ICIB =10}

V_{CE(sat)@ -55 C, ICIB=10}

V_{BE(sat)@25 C, ICIB = 10}

V_{BE(sat)@125 C, ICIB =10}

V_{BE(sat)@ -55 C, ICIB =10}

V_{BE(on)@25 C,}V_{CE = 10V}

V_{BE(on)@125 C,}V_{CE = 10V}

V_{BE(on)@-55 C,}V_{CE = 10V}

0.1

1.0

100

I , COLLECTOR CURRENT (mA)

Figure,2 "On"Voltages

T =25 C

V_EC=20V

f=20MHz

1.0

2.0 3.0

5.0 7.0 10

50 70 100

Ic, COLLECTOR CURRENT (mA)

Figure ,3 Current-Gain-Bandwidth

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MMBTA42

SOT-23 Package Outline Dimension

SOT-23

Dim

Min

0.35

1.19

2.10

0.85

0.46

1.70

2.70

0.01

0.89

0.30

0.076

Max

0.51

1.40

3.00

1.05

1.00

2.10

3.10

0.13

1.10

0.61

0.25

TOP VIEW

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