MMUN2113-G [WEITRON]
Transistor;
| 型号： | MMUN2113-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMUN2111 Series
Bias Resistor Transistor
PNP Silicon
COLLECTOR
3
3
R 1
R 2
1
BASE
1
* “G” Lead(Pb)-Free
2
2
EMITTER
SOT-23
( T =25 C unless otherwise noted)
A
Maximum Ratings
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
50
CEO
Vdc
Vdc
V
50
Collector-Base Voltage
CBO
I
Collector Current-Continuous
mAdc
100
C
Thermal Characteristics
Max
Unit
Characteristics
Symbol
Total Device Dissipation FR-5 Board
P
246
400
(1)
(2)
(1)
mW
D
(1)T =25 C
A
Derate above 25 C
1.5
mW/ C
2.0 (2)
R
508
311
C/W
C
Thermal Resistance, Junction to Ambient
Junction and Storage,Temperature Range
θ
JA
T
-55 to +150
J,Tstg
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 1.0 inch Pad
Device Marking and Resistor Values
Device
Marking
R1(K)
R2(K)
Device
Marking
R1(K)
R2(K)
10
22
47
10
10
MMUN2111
A6A
10
A6G
A6H
A6J
A6K
A6L
MMUN2130
MMUN2131
1.0
2.2
4.7
4.7
22
1.0
2.2
22
47
47
MMUN2112
MMUN2113
MMUN2114
MMUN2115
MMUN2116
A6B
A6C
A6D
A6E
4.7
47
47
MMUN2132
MMUN2133
MMUN2134
4.7
A6F
WEITR O N
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MMUN2111 Series
WE ITR ON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
Off Characteristics
Collector-Emitter Breakdown Voltage
V
V(BR)CEO
-
-
-
50
(I =2.0mA, I =0)
C
B
Collector-Base Breakdown Voltage
(I =10 uA ,I =0)
V(BR)CBO
ICBO
50
-
-
V
C
E
Collector-Base Cutoff Voltage
(V =50 V, I =0)
-
100
nA
CB
E
Collector-Emitter Cutoff Current
(V =50V, I =0)
ICEO
-
-
500
nA
CE
B
Emitter-Base Cutoff Current
(V =6.0V, I =0)
EB
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MMUN2111
MMUN2112
MMUN2113
MMUN2114
MMUN2115
MMUN2116
MMUN2130
MMUN2131
MMUN2132
MMUN2133
MMUN2134
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
IEBO
mA
On Characteristics
Vdc
Collector-Emitter Saturation Voltage
VCE(sat)
-
0.25
-
(I =10mA, I =0.3mA)
B
C
MMUN2130/MMUN2131
MMUN2115/MMUN2116
(I =10mA, I =5mA)
C
B
(I =10mA, I =1mA)
C
B
MMUN2132/MMUN2133/MMUN2134
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
WEITRON
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MMUN2111 Series
WE ITR ON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Max
Characteristics
Symbol
Unit
Min
(3)
On Characteristics
h
-
-
-
-
-
-
-
-
-
-
-
FE
60
100
140
140
250
250
5.0
15
27
140
130
35
60
80
DC Current Gain
MMUN2111
MMUN2112
MMUN2113
MMUN2114
MMUN2115
MMUN2116
MMUN2130
MMUN2131
MMUN2132
MMUN2133
MMUN2134
(V =10V, I =5.0mA)
CE
C
80
160
160
3.0
8.0
15
80
80
V
Output Voltage(on)
(V =5.0V,V =2.5V, R =1.0k Ω )
Vdc
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
MMUN2111
MMUN2112
MMUN2114
MMUN2115
MMUN2116
MMUN2130
MMUN2131
MMUN2132
MMUN2133
CC
L
B
MMUN2134
MMUN2113
(V =5.0V,V =3.5V, R =1.0k
)
)
Ω
Ω
L
CC
B
-
-
V
OH
4.9
Vdc
Output Voltage(off)
(V =5.0V,V =0.5V, R =1.0k
MMUN2115
MMUN2116
MMUN2131
MMUN2132
MMUN2130
L
L
B
B
CC
CC
Ω
(V =5.0V,V =0.25V, R =1.0k
)
(V =5.0V,V =0.050V, R =1.0k
)
Ω
L
CC
B
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
WEITRON
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MMUN2111 Series
WE ITR ON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
On Characteristics
Input Resistor
MMUN2111
MMUN2112
MMUN2113
MMUN2114
MMUN2115
MMUN2116
MMUN2130
MMUN2131
MMUN2132
MMUN2133
MMUN2134
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
k
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
Ω
R1
13
6.1
1.3
2.9
6.1
6.1
28.6
15.4
R1/R2
Resistor Ratio MMUNM2111/MMUN2112/MMUN2113
MMUN2114
1.0
0.21
-
0.8
0.17
-
1.2
0.25
-
MMUN2115/MMUN2116
1.0
0.1
MMUN2130/MMUN2131/MMUN2132
MMUN2133
0.8
0.055
1.2
0.185
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
WEITRON
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MMUN2111 Series
WE ITR ON
MMUN2111 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114
1
180
T =75 C
A
I /I =10
C B
V
CE
= 10V
160
140
120
100
80
T = -25 C
A
25 C
25 C
-25 C
0.1
0.01
75 C
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
FIG.1 V
versus I
FIG.2 DC Current Gain
CE(sat)
C
4.5
4
100
10
1
T =75 C
A
f = 1 MHz
l = 0 V
T = 25C
A
25C
E
3.5
3
-25 C
2.5
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOL TAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
FIG.3 Output Capacitance
FIG.4 Output Current versus Input Voltage
+12 V
10
T = -25 C
A
V
O
= 0.2V
25 C
75 C
Typical Application
for P NP B R Ts
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
FIG.5 Input Voltage versus Output Current
FIG.6 Inexpensive, Unregulated Current Source
WEITRON
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MMUN2111 Series
SOT-23 Package Outline Dimensions
Unit:mm
A
Dim
A
B
C
D
Min Max
0.35 0.51
1.19 1.40
2.10 3.00
0.85 1.05
0.46 1.00
1.70 2.10
2.70 3.10
0.01 0.13
0.89 1.10
0.30 0.61
0.076 0.25
B
TOP VIE W
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON
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相关型号：
MMUN2113T3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB,
MOTOROLA
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