MPSA42B1 [WEITRON]
Transistor;
| 型号： | MPSA42B1 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MPSA42
General Purpose Transistors
NPN Silicon
TO-92
1
2
1. EMITTER
2. BASE
3
3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
310
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
305
V
5
V
Collector Current -Continuous
500
mA
Junction and Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
TJ, Tstg
-55-150
200
℃
℃/mW
℃/mW
RӨ
JA
RӨ
83.3
JC
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
310
305
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO Ic=100uA, IE=0
V(BR)CEO Ic=1mA, IB=0
V(BR)EBO IE=100µA, IC=0
V
V
ICBO
IEBO
VCB=200V, IE=0
VEB=5V, IC=0
0.25
0.1
µA
µA
Emitter cut-off current
hFE(1)
VCE=10V, IC=1mA
60
DC current gain
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
80
75
250
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.2
0.9
V
V
IC=20mA, IB=2mA
VCE=20V, IC=10mA,f=30MHZ
50
MHz
CLASSIFICATION OF hFE(2)
Rank
A
B1
B2
150-200
C
Range
80-100
100-150
200-250
WEITRON
http://www.weitron.com.tw
MPSA42
WEITRON
http://www.weitron.com.tw
MPSA42
TO-92 Outline Dimensions
unit:mm
E
TO-92
Dim
A
B
C
D
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
3.70
1.40
0.55
0.51
4.70
-
C
E
G
H
J
4.70
J
1.270TYP
K
K
L
2.44
14.10
2.64
14.50
G
WEITRON
http://www.weitron.com.tw
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