WAN217U [WEITRON]

Surface Mount Switching Diode; 表面贴装开关二极管
WAN217U
型号: WAN217U
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

Surface Mount Switching Diode
表面贴装开关二极管

二极管 开关
文件: 总3页 (文件大小:358K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WAN202U / WAP202U  
WAN217U  
WEITRON  
Surface Mount Switching Diode  
SWITCHING DIODE  
100m AMPERRES  
80 VOLTS  
Features:  
* Low Current Leakage  
* Low Forward Voltage  
* Ultra High Speed Switching  
* Surgace Mount Package Ideally Suited for Automatic Insertion  
3
Mechanical Data:  
1
2
* Case: SOT-323, Molded Plastic  
* Terminal: Solderable per MIL-STD-202 Method 208  
* Polarity: See Diagram  
SOT-323(SC-70)  
* Weight: 0.006 grams(approx)  
SOT-323 Package Outline Dimensions  
Unit:mm  
A
SOT-323  
Dim  
A
B
C
D
Min  
0.30  
1.15  
2.00  
-
0.30  
1.20  
1.80  
0.00  
0.80  
0.42  
0.10  
Max  
0.40  
1.35  
2.40  
0.65  
0.40  
1.40  
2.20  
0.10  
1.00  
0.53  
0.25  
B
C
TOP VIE W  
D
G
E
E
G
H
J
K
L
H
K
L
M
J
M
WEITRON  
http://www.weitron.com.tw  
WAN202U / WAP202U  
WAN217U  
Maximum Ratings (EACH DIODE)  
Symbol  
Unit  
WAN202U  
WANP202U WAN217U  
Characteristic  
Reverse Voltage  
V
R
I
80  
Volts  
Forward Current  
mAdc  
F
100  
mAdc  
I
Peak Forward Surge Current  
300  
FM  
Thermal Characteristics  
Max  
Symbol  
Unit  
mW  
Characteristic  
Total Device Dissipation FR-5  
*1  
Board ,TA=25 C  
PD  
200  
1.6  
Derate Above 25 C  
mW/ C  
C/W  
C
R
Thermal Resistance Junction to Ambient  
625  
JA  
Junction and Storage Temperature  
*1 ER-5=1.0x0.75x0.062 in  
T ,T  
J stg  
-55 to + 150  
Electrical Characteristics (TA=25 C Unless Otherwise Note) (Each Diode)  
Symbol  
Characteristic  
Min  
Max  
Unit  
Reverse Breakdown Voltage  
V
BR  
80  
Vdc  
uAdc)  
(I =100  
BR  
Reverse Voltage Leakage Current  
I
0.1  
R
uAdc  
V =70V  
R
Diode Capacition  
3.5  
1.2  
C
D
PF  
(V =6Vdc, f=1.0MHz)  
R
Forward Voltage  
V
Vdc  
F
(I =100 mAdc)  
F
Reverse Recovery Time (Figure 1.)  
t
rr  
4.0  
nS  
I =5.0 mAdc,V =6.0 Vdc  
R
R
WEITRON  
http://www.weitron.com.tw  
WAN202U / WAP202U  
WAN217U  
Device Marking  
Item  
Eqivalent Circuit diagram  
Marking  
1
2
3
WAN202U  
A4  
A1  
1
2
3
3
WAP202U  
1
2
WAN217U  
A7  
FIG 1. Recovery Time Equivalent Test Circuit  
50  
0.01µF  
D.U.T.  
20  
10  
5
5
PULSE GENERATOR  
OUTPUT 50  
SAMPLING  
OSCILLOSCOPE  
50  
Ta=85 C  
50 C  
25 C  
INPUT  
2
1
0 C  
-30 C  
100ns  
0.5  
OUTPUT  
0.2  
0.1  
trr  
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
V
F
FORWARD VOLTAGE : (Volts)  
FIG.2 Forward characteristics  
1000  
100  
10  
Ta=100 C  
f=1MHz  
4
75 C  
50 C  
25 C  
2
0
0 C  
1
-25 C  
0.1  
0.01  
0
2
4
6
8
10 12 14 16 18 20  
0
10 20 30 40 50 60 70 80  
VR REVERSE VOLTAGE : Volts)  
VR  
REVERSE VOLTAGE :  
(Volts)  
(
FIG.4 Capacitance  
FIG.3 Reverse characteristics  
WEITRON  
http://www.weitron.com.tw  

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