WOSD12 [WEITRON]
Surface Mount TVS Diodes Array for ESD Protection; 表面贴装TVS二极管阵列的ESD保护
| 型号： | WOSD12 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount TVS Diodes Array for ESD Protection |
| 文件： | 总4页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WOSD03/WOSD05
WOSD12
Surface Mount TVS Diodes Array
for ESD Protection
TRANSIENT
VOLTAGE
SUPPRESSORS
300 WATTS
3-12 VOLTS
P b
Lead(Pb)-Free
FEATURES
* ESD Protection to IEC 61000-4-2,30KV(Air), 30KV(Contact)
* 300 Watts Peak Power Protection(tp=8/20 uS)
* Excellent Clamping Capability
1
* Low Leakage Current
* Protects one I/O or Power line
2
* Solid-state Silicon-avalanche Technology
* Small Package for use in Portable Electronics
* Transient Voltage Suppressors Encapsulated in a SOD-323 Package
SOD-323
MECHANICAL DATA
* CASE: Molded Epoxy
* TERMINAS: UL 94V-0
* WEIGHT: 0.0045 gram
* MOUNTING POSITION: Any
APPLICATIONS
* Microprocessor based equipment
* Notebooks, Desktops, and Servers
* Cell Phone Handsets and Accessories
* Personal Digital Assistants(PDA’s)
* Portable Instrumentation
* Pagers Peripherals
SOD-323 Outline Dimensions
Unit:mm
WEITRON
1/4
Rev.A 19-Dec-05
http://www.weitron.com.tw
WOSD03/WOSD05
WOSD12
Maximum Ratings(TA=25˚C Unless Otherwise Noted)
Characteristic
Symbol
PPK
Votle
300
Unit
W
Peak Pulse Power(tP = 8/20μs)
ESD Voltage(HBM Waveform per IEC 61000-4-2)
Lead Soldering Temperature
VESD
TL
30
kV
°C
°C
260(10s)
-55 to +125
Operating Temperature Range
TJ
Storage Temperature Range
Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS ( T = 25˚C)
WOSD03
TYPE NUMBER
Reverse Stand-Off Voltage
Symbol
VRWM
VBR
Min
Typ
Max
Unit
-
-
4
-
V
Reverse Breakdown Voltage
It = 1mA
Reverse Leakage Current
VRWM = 3.3V
5
-
-
-
V
IR
20
μA
Clamping Voltage
IPP = 1A,tP = 8/20μs
IPP = 5A,tP = 8/20μs
VC
-
-
-
-
7
8.5
V
Peak Pulse Current
tP = 8/20μs
Junction Capacitance
VR = 0V,f = 1MHz
IPP
Cj
-
-
12
A
-
-
350
pF
Device Marking
3D
WOSD05
TYPE NUMBER
Reverse Stand-Off Voltage
Symbol
Min
Typ
Max
Unit
VRWM
-
-
5
V
Reverse Breakdown Voltage
It = 1mA
Reverse Leakage Current
VRWM = 5V
VBR
IR
6
-
-
-
-
V
10
μA
Clamping Voltage
IPP = 5A,tP = 8/20μs
IPP = 24A,tP = 8/20μs
VC
-
-
-
-
9.8
14.5
V
Peak Pulse Current
tP = 8/20μs
Junction Capacitance
VR = 0V,f = 1MHz
IPP
Cj
-
-
24
A
-
-
350
pF
Device Marking
5D
WEITRON
http://www.weitron.com.tw
2/4
Rev.A 19-Dec-05
WOSD03/WOSD05
WOSD12
ELECTRICAL CHARACTERISTICS ( TA=25˚C Unless Otherwise Noted)
WOSD12
TYPE NUMBER
Reverse Stand-Off Voltage
Symbol
Min
Typ
Max
Unit
VRWM
-
-
12
V
Reverse Breakdown Voltage
It = 1mA
Reverse Leakage Current
VRWM = 12V
VBR
IR
13.3
-
-
-
-
V
1
μA
Clamping Voltage
IPP = 5A,tP = 8/20μs
IPP = 15A,tP = 8/20μs
VC
-
-
-
-
19
25
V
Peak Pulse Current
tP = 8/20μs
Junction Capacitance
VR = 1V,f = 1MHz
IPP
Cj
-
-
15
A
-
-
90
pF
Device Marking
6u
ELECTRICAL CHARACTERISTICS CURVES
10
110
100
90
80
70
60
50
40
30
20
10
1
0.1
0
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Pulse Duration - tp(μs)
Ambient Temperature - TA(˚C)
Fig.2 Power Derating Curve
Fig.1 Non-Repetitive Peak Pulse Power
vs. Pulse Time
WEITRON
http://www.weitron.com.tw
3/4
Rev.A 19-Dec-05
WOSD03/WOSD05
WOSD12
110
100
90
Waveform
Parameters
tr = 8µs
30
25
20
15
10
5
Waveform
Parameters
tr = 8µs
80
td = 20µs
70
e-t
60
td = 20µs
WOSD12
50
40
td = IPP/2
30
20
10
0
WOSD03/WOSD05
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Peak Pulse Current - IPP(A)
Time (µs)
Fig.4 Clamping Voltage vs.
Peak Pulse Current
Fig.3 Pulse Waveform
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
350
300
250
200
150
100
50
WOSD12
f =1MHz
WOSD03/WOSD05
WOSD03/WOSD05
Waveform
Parameters:
tr = 8µs
WOSD12
td = 10µs
0
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
Forward Current - IF(A)
Reverse Voltage - VR(V)
Fig.5 Capacitance vs. Reverse Voltage
Fig.6 Forward Voltage vs. Forward Current
WEITRON
http://www.weitron.com.tw
4/4
Rev.A 19-Dec-05
相关型号：
WOSM03
Trans Voltage Suppressor Diode, 350W, 3.3V V(RWM), Unidirectional, 2 Element, Silicon,
WEITRON
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