WSD520G_10 [WEITRON]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | WSD520G_10 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD520G
Surface Mount Schottky
Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
100m AMPERES
30 VOLTS
P b
Lead(Pb)-Free
Feature:
* Ultra Small mold type
* Low IR
* High Reliability
1
2
Description:
Low current rectification
SOD-723
SOD-723 Outline Dimensions
SOD-723
−X−
A
Dim
A
B
C
D
E
J
K
Min
0.95
0.55
0.49
0.25
0.15
0.08
1.35
Max
1.05
0.65
0.55
0.32
0.25
0.15
1.45
−Y−
B
D 2X
0.08
X Y
PIN 1. CATHODE
2. ANODE
C
SOLDERING FOOTPRINT
1.1
0.45
E
J
K
0.50
SCALE 10:1
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WSD520G
Maximum Ratings (T =25˚C Unless otherwise noted)
A
Unit
Value
30
Symbol
Characteristic
V
R
DC Reverse Voltage
V
I
100
mA
O
I
Peak Forward Surge Current
500
mA
FSM
T
Operation Junction Temperature Range
Storage Temperature Range
125
˚C
˚C
J
T
-40 to +125
stg
(T =25˚C Unless otherwise noted)
Electrical Characteristics
Characteristic
A
Symbol
Min
Typ
Max
Unit
Forward Voltage
I =10mA
F
V
-
-
0.45
F
V
Reverse Leakage
V =10V
R
I
R
-
-
0.5
µA
Device Marking
Item
Marking
Eqivalent Circuit diagram
2
1
WSD520G
E
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WSD520G
Electrical Characteristic Curves (T =25°C)
A
1000000
100
10
1
1000
100
10
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
f=1MHｚ
Ta=125℃
Ta=75℃
100000
10000
1000
100
1
Ta=-25℃
Ta=25℃
0.1
10
0.01
0.001
1
0
100
200
300
400
500
600
0
10
20
30
0
5
10
REVERSE VOLTAGE:VR(V)
15
20
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
VR-Ct CHARACTERISTICS
370
360
350
340
330
320
20
19
18
17
16
15
14
13
12
11
10
1000
900
800
700
600
500
400
300
200
100
0
Ta=25℃
IF=10mA
n=30pcs
Ta=25℃
VR=10V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:100.5nA
IR DISPERSION MAP
Ifsm
AVE:15.94pF
AVE:338.8mV
VF DISPERSION MAP
Ct DISPERSION MAP
10
10
20
15
10
5
1cyc
Ifsm
Ifsm
t
8.3ms 8.3ms
1cyc
8.3ms
5
5
AVE:3.90A
0
0
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
0.1
0.08
0.06
0.04
0.02
0
0.02
0.015
0.01
0.005
0
1000
100
10
Rth(j-a)
DC
D=1/2
Rth(j-c)
Mounted on epoxy board
Sin(θ＝180)
IF=100mA
IM=10mA
D=1/2
DC
Sin(θ＝180)
time
300u
1m
0
0.05
0.1
0.15
0.2
0
5
10
15
20
25
30
0.001
0.1
10
1000
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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WSD520G
0.3
0.3
0.2
0.1
0
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
VR=15V
Tj=125℃
D=t/T
VR=15V
Tj=125℃
0.2
DC
DC
T
T
D=1/2
D=1/2
0.1
Sin(θ＝180)
Sin(θ＝180)
25
0
0
50
75
100
125
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
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