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WT-2307 [WEITRON]

Surface Mount P-Channel Enhancement Mode MOSFET; 表面贴装P沟道增强型MOSFET
WT-2307
型号： WT-2307
厂家： WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述：

Surface Mount P-Channel Enhancement Mode MOSFET
表面贴装P沟道增强型MOSFET
文件： 总6页 (文件大小：132K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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WT-2307  
Surface Mount P-Channel  
Enhancement Mode MOSFET  
DRAIN  
3
DRAIN CURRENT  
- 3 AMPERES  
1
DRAIN SOURCE VOLTAGE  
- 20 VOLTAGE  
Features:  
GATE  
*Super high dense cell design for low RDS(ON)  
2
SOURCE  
R
R
<80 m @V =-4.5V  
GS  
Ω
DS(ON)  
DS(ON)  
<100 m @V =-2.5V  
Ω
GS  
3
*Rugged and Reliable  
*SOT-23 Package  
1
2
SOT-23  
Maximum Ratings (TA=25 C Unless Otherwise Specified)  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Value  
-20  
Unite  
V
DS  
V
GS  
V
V
A
+
12  
-
(1)  
(1)  
Continuous Drain Current (T =125 C)  
J
I
D
-3  
(2)  
-11  
Pulsed Drain Current  
I
A
A
DM  
I
Drain-Source Diode Forward Current  
S
-1.25  
1.25  
100  
(1)  
Power Dissipation  
P
W
D
Maximax Junction-to-Ambient  
R
C/W  
θ
JA  
Operating Junction and Storage  
Temperature Range  
T ,Tstg  
J
-55 to 150  
C
Device Marking  
WT2307=S07  
WEITRON  
http://www.weitron.com.tw  
WT-2307  
Electrical Characteristics (T =25 C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
(2)  
Static  
Drain-Source Breakdown Voltage  
=0V, I =-250 uA  
V
(BR)DSS  
-
-
V
V
-20  
-0.5  
-
V
D
GS  
Gate-Source Threshold Voltage  
=V , I =-250 uA  
V
GS (th)  
-1.5  
-0.8  
-
V
D
DS GS  
Gate-Source Leakage Current  
+
-
I
GSS  
100  
nA  
uA  
+
=0V,V = 10V  
-
GS  
V
DS  
Zero Gate Voltage Drain Current  
=-16V,V =0V  
I
-
-
DSS  
1
V
DS  
GS  
rDS (on)  
Drain-Source On-Resistance  
mΩ  
80  
100  
-
-
70  
85  
V
=-4.5V, I =-4.0A  
GS  
GS  
D
V
=-2.5V, I =-2.0A  
D
On-State Drain Current  
=-5V,V =-4.5A  
I
D(on)  
-
-
-
-
-15  
4
A
S
V
DS  
GS  
Forward Transconductance  
g
fs  
V
=-5V, I =-5A  
DS  
D
(3)  
Dynamic  
Input Capacitance  
C
-
-
iss  
-
-
586  
101  
59  
V
=-15V,V =0V, f=1MHZ  
DS  
GS  
Output Capacitance  
=-15V,V =0V, f=1MHZ  
C
oss  
PF  
V
DS  
GS  
Reverse Transfer Capacitance  
C
rss  
-
-
V
=-15V,V =0V, f=1MHZ  
DS  
GS  
(3)  
Switching  
Turn-On Time  
t
-
-
-
-
-
-
nS  
nS  
d(on)  
6.5  
V
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω  
GEN  
L
GS  
DD  
D
Rise Time  
t
32.1  
r
V
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω  
GEN  
L
GS  
DD  
D
Turn-Off Time  
V
t
nS  
nS  
58.4  
48  
d(off)  
-
-
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω  
GEN  
L
GS  
DD  
D
Fall Time  
t
f
V
Ω
=-4.5V,V =-10V, I =-1A, R =10 ,R =6Ω  
GEN  
L
GS  
DD  
D
Total Gate Charge  
=-10V, I =-3A,V =-4.5V  
-
-
-
nc  
Qg  
5.92  
V
GS  
DS  
D
Gate-Source Charge  
=-10V, I =-3A,V =-4.5V  
Qgs  
Qgd  
1.36  
1.4  
nc  
nc  
-
-
V
GS  
DS  
D
Gate-Drain Charge  
=-10V, I =-3A,V =-4.5V  
-
V
GS  
DS  
D
Diode Forward Voltage  
Drain-Source  
-
-1.815  
-1.2  
VSD  
V
V
=0V, I =-1.25A  
DS  
S
<
Note:  
_
1. Surface Mounted on FR4 Board t 10sec.  
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.  
2. Guaranteed by Design, not Subject to Production Testing.  
WEITRON  
http://www.weitron.com.tw  
WT-2307  
Typical Electrical Characteristics  
25  
20  
15  
10  
10  
-55 C  
25 C  
-VGS=2.5V  
8
Tj =125 C  
-VGS=10.5~3.5V  
6
4
-VGS=1.5V  
5
0
2
0
3
0.0  
0.5  
1
1.5  
2
2.5  
0
4
6
8
10  
12  
-V , DRAIN-TO-SOURCE VOLTAGE(V)  
DS  
-V , GATE-TO-SOURCE VOLTAGE(V)  
GS  
FIG.2 Transfer Characteristics  
FIG.1 Output Characteristics  
2.2  
1.8  
1000  
-VGS=-4.5V  
ID=-4A  
800  
600  
Ciss  
1.4  
1.0  
400  
0.6  
0.2  
0
200  
0
Coss  
Crss  
0
5
10  
15  
20  
25  
30  
-50 -25  
0
25  
50  
75  
100 125  
T ( C)  
-V , GATE-TO-SOURCE VOLTAGE(V)  
GS  
j
FIG.3 Capacitance  
FIG.4 On-Resistance Variation with  
Temperature  
WEITRON  
http://www.weitron.com.tw  
WT-2307  
1.3  
1.2  
1.10  
1.07  
1.04  
VDS=V  
ID =250uA  
GS  
ID =250uA  
1.1  
1.0  
0.9  
1.00  
0.97  
0.94  
0.91  
0.8  
0.7  
0.6  
-50 -25  
0
25 50 75 100 125  
-50 -25  
0
25 50 75 100 125  
T ,JUNCTION TEMPERATURE( C)  
j
T ,JUNCTION TEMPERATURE( C)  
j
FIG.6 Breakdown Voltage Variation  
with Temperature  
FIG.5 with Temperature  
12  
20  
10  
8
10  
6
4
2
0
2
0
TJ=25 C  
VDS=-5V  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
5
10  
15  
20  
25  
V
,BODY DIODE FORWARD VOLTAGE(V)  
SD  
I
,DRAIN-SOURCE CURRENT(A)  
DS  
FIG.8 Body Diode Forward Voltage  
Variation with Source Current  
FIG.7 Transconductance Variation  
with Drain Current  
50  
10  
5
4
VDS=10V  
ID =3A  
3
2
1
1
VDS=-4.5V  
Single Pulse  
TC=25 C  
1
0
0.1  
0.03  
0.1  
1
10 20  
50  
0
1
2
3
4
5
6
7
8
Q ,TOTAL GATE CHARGE(nC)  
g
V
DS  
,DRAIN-SOURCE CURRENT(V)  
FIG.10 Maximum Safe Operating Area  
FIG.9 Gate Charge  
WEITRON  
http://www.weitron.com.tw  
WT-2307  
on  
t
t
off  
V
DD  
d(off)  
t
r
t
d(on)  
t
f
t
5
90%  
10%  
90%  
R
L
V
IN  
OUT  
V
V
10%  
INVE R TE D  
D
OUT  
V
V
G S  
R
G E N  
90%  
G
50%  
50%  
IN  
10%  
S
P ULS E WIDTH  
FIG.12 Switching Waveforms  
FIG.11 Switching Test Circuit  
10  
1
0.5  
DM  
P
0.2  
0.1  
1
t
2
t
0.1  
0.05  
0.02  
th  
1. Rthja (t)=r (t) * R ja  
th  
2. R ja=See Datasheet  
th  
3. Tjm-TA = Pdm* R ja (t)  
4. Duty Cycle, D=t1/t2  
Single Pulse  
0.01  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
SQUARE WAVE PULSE DURATION(SEC)  
NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE  
WEITRON  
http://www.weitron.com.tw  
WT-2307  
SOT-23 Package Outline Dimensions  
Unit:mm  
A
Dim  
A
B
C
D
Min Max  
0.35 0.51  
1.19 1.40  
2.10 3.00  
0.85 1.05  
0.46 1.00  
1.70 2.10  
2.70 3.10  
0.01 0.13  
0.89 1.10  
0.30 0.61  
0.076 0.25  
B
TOP VIE W  
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON  
http://www.weitron.com.tw  

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