BAS16LT1 [WILLAS]

SOT-23 Plastic-Encapsulate Diodes; SOT- 23塑封装二极管


型号：	BAS16LT1
厂家：	WILLAS ELECTRONIC CORP
描述：	SOT-23 Plastic-Encapsulate Diodes SOT- 23塑封装二极管二极管
文件：	总3页 (文件大小：306K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WILLAS

BAS16LT1

SOT-23 Plastic-Encapsulate Diodes

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

BAS16LT1

SOT-23

3000/Tape&Reel

SOT–23

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

Peak Forward Current

V _R

I _F

Vdc

200

500

mAdc

CATHODE

ANODE

Peak Forward Surge Current

I _FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

T_J, T_stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(V _R= 75Vdc)

Symbol

Min

Max

Unit

I _R

µAdc

—

1.0

(V _R= 75 Vdc, T _J= 150°C)

(V _R= 25 Vdc, T _J= 150°C)

Reverse Breakdown Voltage

(I _BR= 100 µAdc)

V _(BR)

V _F

—

Vdc

Forward Voltage

(I _F= 1.0 mAdc)

—

715

855

(I _F= 10 mAdc)

(I _F= 50 mAdc)

1000

1250

(I _F= 150 mAdc)

Diode Capacitance

C _D

V _FR

t _rr

—

–-

—

2.0

1.75

6.0

Vdc

(V _R= 0, f = 1.0 MHz)

Forward Recovery Voltage

(I _F= 10 mAdc, t _r= 20ns )

Reverse Recovery Time

(I _F= I _R= 10 mAdc, R _L= 50 Ω)

Stored Charge

Q _S

(I _F= 10 mAdc to V _R= 5.0Vdc, R _L= 500 Ω)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2012-12

WILLAS ELECTRONIC CORP.

WILLAS

BAS16LT1

SOT-23 Plastic-Encapsulate Diodes

2.0 k

820 Ω

+10 V

I _F

t _p

t _r

0.1µF

I _F

100 µH

0.1 µF

t _rr

10%

90%

D.U.T.

i _R(REC)= 1.0 mA

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

I _R

OUTPUT PULSE

INPUT SIGNAL

SAMPLING

V _R

(I _F= I _R= 10 mA; MEASURED

at i _R(REC)= 1.0 mA)

OSCILLOSCOPE

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I _F) of 10 mA.

Notes: 2. Input pulse is adjusted so I _R(peak)is equal to 10 mA.

Notes: 3. t _p» t _rr

Figure 1. Recovery Time Equivalent Test Circuit

100

_A= 150°C

_A= 125°C

T _A= 85°C

1.0

0.1

T_A= – 40°C

_A= 85°C

1.0

0.1

T _A= 55°C

T _A= 25°C

0.01

0.001

T _A= 25°C

0.2

0.4

0.6

0.8

1.0

1.2

V _F, FORWARD VOLTAGE (VOLTS)

V _R, REVERSE VOLTAGE (VOLTS)

Figure 2. Forward Voltage

Figure 3. Leakage Current

0.68

0.64

0.60

0.56

0.52

V _R, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

2012-12

WILLAS ELECTRONIC CORP.

WILLAS

BAS16LT1

SOT-23 Plastic-Encapsulate Diodes

SOT-23

.122(3.10)

.106(2.70)

.008(0.20)

.003(0.08)

.080(2.04)

.070(1.78)

.004(0.10)MAX.

.020(0.50)

.012(0.30)

Dimensions in inches and (millimeters)

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

2012-12

WILLAS ELECTRONIC CORP.

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