BC807-40WT1 [WILLAS]

General Purpose Transistors; 通用晶体管


型号：	BC807-40WT1
厂家：	WILLAS ELECTRONIC CORP
描述：	General Purpose Transistors 通用晶体管晶体晶体管
文件：	总3页 (文件大小：315K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WILLAS

BC807-40WT1

GeneralPurposeTransistors

PNP Silicon

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

SOT–323

BC807-40WT1

SOT-323

3000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

COLLECTOR

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

–45

–50

BASE

EBO

–5.0

–500

Collector Current — Continuous

I _C

mAdc

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A

P _D

= 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

°C/W

Alumina Substrate, (2) T_A

Derate above 25°C

= 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

°C/W

°C

T _J

, T ^stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= –10 mA)

V _(BR)CEO

–45

–50

–5.0

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I C = –10µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I_E= –1.0 µA)

V _(BR)EBO

I _CBO

Collector Cutoff Current

(V_CB= –20 V)

—

–100

–5.0

(V_CB= –20 V, T _J= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2012-11

WILLAS ELECTRONIC CORP.

WILLAS

BC807-40WT1

GeneralPurposeTransistors

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

h _FE

—

250

—

600

—

(I_C= –100 mA, V_CE= –1.0 V)

(I_C= –500 mA, V_CE= –1.0 V)

Collector–Emitter Saturation Voltage

(I_C= –500 mA, I_B= –50 mA)

V _CE(sat)

—

–0.7

–1.2

Base–Emitter On Voltage

V _BE(on)

—

(I_C= –500 mA, VCE= –1.0 V)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

f _T

100

—

MHz

(I_C= –10 mA, V_CE= –5.0 V_dc, f = 100 MHz)

Output Capacitance

C _obo

(V_CB= –10 V, f = 1.0 MHz)

2012-11

WILLAS ELECTRONIC CORP.

WILLAS

GeneralPurposeTransistors

BC807-40WT1

SOT−323

.087(2.20)

.070(1.80)

.010(0.25)

.003(0.08)

.056(1.40)

.047(1.20)

.004(0.10)MAX.

.016(0.40)

.008(0.20)

Dimensions in inches and (millimeters)

SOLDERING FOOTPRINT*

0.65

0.025

0.65

0.025

1.9

0.075

0.9

0.035

0.7

0.028

inches

SCALE 10:1

2012-11

WILLAS ELECTRONIC CORP.

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