BSS84WT1 [WILLAS]

130 mAmps, 50 Volts; 130毫安， 50伏


型号：	BSS84WT1
厂家：	WILLAS ELECTRONIC CORP
描述：	130 mAmps, 50 Volts 130毫安， 50伏
文件：	总4页 (文件大小：318K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WILLAS

BSS84WT1

Power MOSFET

mAmps, 50 Volts

130

P–Channel SOT–323

These miniature surface mount MOSFETs reduce power loss

conserve energy, making this device ideal for use in small power

management circuitry. Typical applications are dc–dc converters, load

switching, power management in portable and battery–powered

products such as computers, printers, cellular and cordless telephones.

• ^{Energy Efficient}

• ^{Miniature SOT–323 Surface Mount Package Saves Board Space}

Pb-Free package is available

•

SOT –323

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

THERMAL CHARACTERISTICS

Marking Diagram

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 3.) T_A= 25°C

P_D

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

R_θJA

P_D

556

300

°C/W

Total Device Dissipation

Alumina Substrate,(Note 4.) T = 25°C

Derate above 25°C

mW/°C

2.4

PD = Device Code

M = Month Code

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J,

–o55 to

+150

stg

ORDERING INFORMATION

Device

Package

Shipping

SOT-323 3000/Tape&Reel

BSS84WT1

MAXIMUM RATINGS (T_{J = 25 C unless otherwise noted)}

Symbol

V_DSS

Value

Unit

V^dc

Rating

3 Drain

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

V_GS

Drain Current

– Continuous @ T_A= 25°C

– Pulsed Drain Current (t_p≤ 10 µs)

I_D

I_DM

130

520

Gate

Total Power Dissipation @ T_A= 25°C

P_D

225

Operating and Storage Temperature

Range

T_J, T

– 55 to

150

°C

stg

Source

Thermal Resistance – Junction–to–Ambient

R_θJA

T_L

556

260

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

2012-09

WILLAS ELECTRONIC CORP.

WILLAS

BSS84WT1

Power MOSFET

mAmps, 50 Volts

130

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

–

Vdc

(BR)DSS

= 0 Vdc, I = 250 µAdc)

Zero Gate Voltage Drain Current

µAdc

DSS

= 25 Vdc, V

= 50 Vdc, V

= 0 Vdc)

= 0 Vdc, T = 125°C)

–

0.1

Gate–Body Leakage Current (V

20 Vdc, V

= 0 Vdc)

–

nAdc

GSS

ON CHARACTERISTICS (Note 1.)

Gate–Source Threaded Voltage

0.8

–

5.0

–

2.0

–

Vdc

Ohms

GS(th)

= V , I = 1.0 mAdc)

Static Drain–to–Source On–Resistance

(V = 5.0 Vdc, I = 100 mAdc)

DS(on)

Transfer Admittance

(V = 25 Vdc, I = 100 mAdc, f = 1.0 kHz)

DYNAMIC CHARACTERISTICS

Input Capacitance

= 5.0 Vdc)

–

iss

Output Capacitance

= 5.0 Vdc)

oss

Transfer Capacitance

5.0

rss

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

–

2.5

1.0

–

d(on)

Rise Time

= –15 Vdc, I = –2.5 Adc,

= 50 Ω)

Turn–Off Delay Time

Fall Time

d(off)

8.0

Gate Charge

6000

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current

–

0.130

0.520

–

Pulsed Current

Forward Voltage (Note 2.)

2.5

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

0.6

0.5

0.4

0.3

0.2

0.5

25°C

= 10 V

= 3.5 V

T = 25°C

0.45

0.4

3.25 V

-55°C

150°C

0.35

0.3

3.0 V

0.25

0.2

2.75 V

0.15

0.1

2.5 V

0.1

2.25 V

0.05

1.5

2.5

3.5

, GATE-TO-SOUDCE VOLTAGE (VOLTS)

, DDAIN-TO-SOUDCE VOLTAGE (VOLTS)

Figure 1. Transfer Characteristics

Figure 2. On–Region Characteristics

2012-09

WILLAS ELECTRONIC CORP.

WILLAS

BSS84WT1

Power MOSFET

mAmps, 50 Volts

130

TYPICAL ELECTRICAL CHARACTERISTICS

150°C

= 4.5 V

= 10 V

6.5

150°C

5.5

4.5

25°C

3.5

-55°C

2.5

0.1

0.2

0.3

0.4

0.5

0.6

0.1

0.2

0.3

0.4

0.5

0.6

I , DDAIN CUDDENT (AMPS)

Figure 4. On–Resistance versus Drain Current

Figure 3. On–Resistance versus Drain Current

= 40 V

T = 25°C

1.8

1.6

1.4

1.2

= 10 V

= 0.52 A

= 4.5 V

= 0.13 A

= 0.5 A

0.8

0.6

-ā55

-5

145

500

1000

1500

2000

T , JUNCTION TEMPEDATUDE (°C)

Q , TOTAL GATE CHADGE (pC)

Figure 6. Gate Charge

Figure 5. On–Resistance Variation with Temperature

T = 150°C

25°C

-55°C

0.1

0.01

0.001

0.5

1.0

1.5

2.0

2.5

3.0

V , DIODE FODWAD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

2012-09

WILLAS ELECTRONIC CORP.

WILLAS

BSS84WT1

Power MOSFET

mAmps, 50 Volts

130

SOT−323

.087(2.20)

.070(1.80)

.010(0.25)

.003(0.08)

.056(1.40)

.047(1.20)

.004(0.10)MAX.

.016(0.40)

.008(0.20)

Dimensions in inches and (millimeters)

GENERIC

SOLDERING FOOTPRINT*

MARKING DIAGRAM

0.65

0.025

0.65

0.025

1.9

= Specific Device Code

= Date Code

0.075

0.9

0.035

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

0.7

0.028

inches

SCALE 10:1

2012-09

WILLAS ELECTRONIC CORP.

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