MMBTA4XLT1 [WILLAS]
High Voltage Transistors; 高电压晶体管
| 型号： | MMBTA4XLT1 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | High Voltage Transistors |
| 文件： | 总4页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
MMBTA4xLT1
HighVoltageTransistors
ƽ RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
MMBTA42LT1
1D
SOT-23
3000/Tape&Reel
MMBTA43LT1
M1E
SOT-23
3000/Tape&Reel
SOT–23
MAXIMUM RATINGS
Value
Rating
Symbol
M MBTA42 M MBTA43
Unit
Vdc
3
COLLECTOR
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
V
V
CEO
300
300
6.0
200
200
6.0
CBO
EBO
C
Vdc
1
BASE
Vdc
2
Collector Current — Continuous
I
500
mAdc
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
= 25°C
P
D
225
mW
TA
Derate above 25°C
1.8
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
P
θJA
556
D
300
mW
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
417
T
J
, T stg
–55 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
Vdc
(I C = 1.0 mAdc, I B = 0)
M MBTA42
M MBTA43
300
200
—
—
Collector–Base Breakdown Voltage
V (BR)CBO
Vdc
(I C= 100 µAdc, I E= 0)
M MBTA42
M MBTA43
300
200
—
—
Emitter–Base Breakdown Voltage
(I E= 100 µAdc, I C= 0)
V (BR)EBO
I CBO
6.0
—
Vdc
Collector Cutoff Current
( V CB= 200Vdc, I E= 0)
( V CB= 160Vdc, I E= 0)
Emitter Cutoff Current
( V EB= 6.0Vdc, I C= 0)
µAdc
M MBTA42
M MBTA43
—
—
0.1
0.1
I EBO
µAdc
M MBTA42
M MBTA43
—
—
0.1
0.1
( V EB= 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle <2.0%.
<
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
MMBTA4xLT1
HighVoltageTransistors
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (3)
DC Current Gain
hFE
––
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
Both Types
Both Types
M MBTA42
M MBTA43
25
40
40
40
—
—
—
—
(I C = 30 mAdc, V CE = 10 Vdc)
Collector–Emitter Saturation Voltage
(I C = 20 mAdc, I B = 2.0 mAdc)
VCE(sat)
Vdc
Vdc
M MBTA42
M MBTA43
—
—
0.5
0.5
Base–Emitter Saturation Voltage
(I C = 20 mAdc, I B= 2.0 mAdc)
V
—
0.9
BE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product
(V CE = 20 Vdc, I C = 10mA, f = 100 MHz)
Collector – Base Capacitance
fT
50
—
MHz
pF
C cb
(V CB= 20 Vdc, I E = 0, f = 1.0 MHz)
M MBTA42
M MBTA43
—
—
3.0
4.0
3. Pulse Test: Pulse Width
<300 µs, Duty Cycle <2.0%.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
MMBTA4xLT1
HighVoltageTransistors
200
V CE= 10Vdc
T J = 125°C
100
25°C
50
– 55°C
30
20
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
50
100
70
50
20
C eb
T J = 25°C
V CE = 20 V
f = 20 MHz
10
30
20
5.0
2.0
1.0
C cb
10
0.2
0.5
1.0
2.0
5.0
10
20
50
100 200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V R, REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 2. Capacitance
Figure 3. Current–Gain — Bandwidth Product
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
V BE(sat) @ I C /I B = 10
V
BE(on) @ V CE = 10 V
5.0
V CE(sat) @ I C /I B = 10
5.0 7.0 10
1.0
2.0 3.0
20 30
50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
MMBTA4xLT1
HighVoltageTransistors
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.
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