MMBTA5XLT1 [WILLAS]
Driver Transistors; 驱动晶体管
| 型号： | MMBTA5XLT1 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | Driver Transistors |
| 文件： | 总3页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
MMBTA5xLT1
DriverTransistors
PNP Silicon
ƽ We declare that the material of product
compliance with RoHS requirements.
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
MAXIMUM RATINGS
Value
Rating
Symbol
MMBTA55
MMBTA56
Unit
Vdc
SOT–23
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
–60
–80
3
V CBO
–60
–80
Vdc
COLLECTOR
V
–4.0
–500
Vdc
EBO
1
I C
mAdc
SE
2
THERMAL CHARACTERISTICS
Characteristic
EMITTER
Sybol
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
5
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambien
Total Device Dissipation
A
Alumina Substrate, (2) TA = 2
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Jmb
Junction and Storage Temre
R θJA
417
T J , T stg
–55 to +150
DEVICE MARKING
M MBTA55LT1= 2H ; M MBTA56LT1= 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B= 0 )
V (BR)CEO
Vdc
M MBTA55
M MBTA56
–60
–80
—
—
Emitter–Base Breakdown Voltage
V (BR)EBO
–4.0
—
—
Vdc
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current
( V CB = –60Vdc, I E= 0)
I CEO
I CBO
–0.1
µAdc
µAdc
M MBTA55
M MBTA56
—
—
–0.1
–0.1
( V CB = –80Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<300 µs, Duty Cycle
<2.0%.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
MMBTA5xLT1
DriverTransistors
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –100mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –100mAdc, I B = –10mAdc)
Base–Emitter On Voltage
100
100
—
—
—
VCE(sat)
–0.25
Vdc
Vdc
V BE(on)
—
–1.2
—
(I C = –100mAdc, V CE = –1.0Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current –Gain–Bandwidth Product(4)
f T
MHz
(V CE = –1.0 Vdc, I C = –100mAdc, f = 100 MHz)
4. f T is defined as the frequency at which |h f e | extrapolates to unity.
ORDERING INFORMATION
Device
Marking
Shippin
M MBTA55LT1
2H
3000/Tape & Reel
M MBTA56LT1
2GM
3000/e eel
TURN−ON TIME
TURN−OFF TIME
V
CC
+V
C
−1.0 V
BB
+40
+40 V
5.0 ms
100
R
100
R
L
L
OUTPUT
OUTPUT
+10 V
0
V
in
R
V
in
R
B
B
t = 3.0 ns
r
* C t 6.0 pF
S
* C t 6.0 pF
S
5.0 mF
5.0 mF
100
100
5.0 ms
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
MMBTA5xLT1
DriverTransistors
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.1
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.
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