MURS160-FN3 [WILLAS]
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V; 1.0A表面装载超快速整流器 - 600V
| 型号： | MURS160-FN3 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | 1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V |
| 文件： | 总3页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
mFN-323 PACKAGE
MURS160-FN3
Package outline
Features
• Low profile surface mounted application in order to
optimize board space.
mFN-323
• mini Flat No-Lead Package.
• Glass passivated chip junction.
0.044(1.10)
0.036(0.90)
0.017(0.43)
0.013(0.33)
Pb-Free package is available
•
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
•
Polarity: Color band denotes cathode end
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : mFN-323
0.103(2.60)
0.095(2.40)
0.026(0.65)
0.014(0.35)
• Mounting Position : Any
Dimensions in inches and (millimeters)
Maximum ratings and Electriarcteristics (AT TA=25oC unless otherwise noted)
MAX.
UNIT
A
Symbol
MIN.
TYP.
PARAMETER
NDITIONS
IO
1.0
Forward rectified current
ms sinhalf sine-wave superimposed on
load (JEDEC methode)
IFSM
A
30
Forward surge current
VR VRRM TJ = 25OC
μA
IR
5.0
Reverse current
25
CJ
pF
Typical Diode junction capacitance
f=1MHz and applied 4V DC reverse voltage
TSTG
OC
+175
Storage temperature
-65
*1 Maximun Repetitive peak reverse voltage
*2 Maximun RMS voltage
Operating
*5
*1
VRRM
(V)
*3
*4
*2
VRMS
(V)
VR
VF
trr
SYMBOLS
temperature
TJ, (OC)
*3 Maximun DC Blocking Voltage
(V)
(V)
(ns)
1.25
-55 to +150
600
420
600
50
MURS160-FN3
*4 Maximum forward voltage@IF=1.0A,TJ=25°C
*5 Maximum Reverse recovery time, note 1
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
mFN-323 PACKAGE
MURS160-FN3
Rating and characteristic curves
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
1
0.4
0.1
0.2
0
0.01
25
50
75
100
125
150
175
AMBIENT TEMPERATURE (°C)
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE,(V)
FIG.4M NON-REPETITIVE FORWARD
SURGE CURRENT
40
20
10
0
FIG.3- TEST CIRCUIT DIAGRAM AND RSE
RECOVERY TIME CHCTE
8.3ms Single Half
TJ=25 C
Sine Wave
JEDEC method
50
W
10W
NONINDUC
NONINDUCTIVE
(
)
(+)
D.U.T.
25Vdc
ULSE
GENERATOR
(NOTE 2)
(approx.)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
60
50
40
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
30
20
10
0
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
2012-10
WILLAS ELECTRONIC CORP.
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
mFN-323 PACKAGE
MURS160-FN3
Pinning information
Pin
Simplified outline
Symbol
Pin1 cathode
Pin2 anode
1
2
1
2
Marking
Type number
Marking code
M6
MURS160-FN3
Suggested solder ayo
(1.90)
0.075
(0.70)
0.028
(0.50)
0.020
(0.90)
0.036
(0.50)
0.020
Dimensions in inches and (millimeters)
2012-10
WILLAS ELECTRONIC CORP.
相关型号：
MURS160-HE3/52T
DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
MURS160-HE3/5BT
DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode
VISHAY
MURS160-T3-LF
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
WTE
MURS160/2
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
VISHAY
MURS160/5
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明