ESD56101D10-2/TR [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;
| 型号： | ESD56101D10-2/TR |
| 厂家： | 
WILLSEMI |
| 描述： | 1-Line, Uni-directional, Transient Voltage Suppressor 二极管 |
| 文件： | 总6页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD56101DXX
ESD56101DXX
http//:www.sh-willsemi.com
1-Line, Uni-directional, Transient Voltage Suppressor
Descriptions
The ESD56101DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56101DXX is specifically designed to protect power
lines.
DFN1610-2L (Bottom View)
The ESD56101DXX is available in DFN1610-2L package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
Features
Reverse stand-off voltage: 5V ~ 15V
Surge protection according to IEC61000-4-5
see Table 4
Circuit diagram
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Pin1
Pin2
x
*
Solid-state silicon technology
X = Device code (B C F G)
Applications
* = Month code
Marking (Top View)
Power supply protection
Power management
Order information
Table 1.
Device
Package
Shipping
Marking
ESD56101D05-2/TR DFN1610-2L 3000/Tape&Reel
ESD56101D10-2/TR DFN1610-2L 3000/Tape&Reel
ESD56101D12-2/TR DFN1610-2L 3000/Tape&Reel
ESD56101D15-2/TR DFN1610-2L 3000/Tape&Reel
B*
C*
F*
G*
Will Semiconductor Ltd.
1
Revision 1.4, 2017/09/18
ESD56101DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
1250
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.4, 2017/09/18
ESD56101DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Stand-off Breakdown voltage
leakage current
Forward voltage
VF(V) IF = 20mA
capacitance
F = 1MHz,
Voltage
VBR(V) IBR = 1mA
Type number
IRM(μA) at VRWM
VRWM (V)
VR=0V (pF)
Max.
Min.
Typ. Max.
Typ.
Max.
1.0
Min.
0.45
0.45
0.45
0.45
Max.
1.25
1.25
1.25
1.25
Typ.
800
350
300
240
Max.
1200
500
ESD56101D05
ESD56101D10
ESD56101D12
ESD56101D15
5.0
6.5
7.5
8.5
-
10.0
12.0
15.0
11.5
13.0
16.0
13.2
15.0
18.0
15.0
17.0
20.0
-
-
0.1
0.1
440
-
0.1
350
Table 4.
Clamping voltage
VCL(V) at IPP = 16A,
tp = 100ns 2)3)
Clamping voltage
VCL(V) at
Rated peak pulse
current IPP (A)1)3)
Clamping voltage
VCL(V) at IPP(A)1)3)
Type number
VESD = 8kV 2)3)
ESD56101D05
ESD56101D10
ESD56101D12
ESD56101D15
80
60
50
40
15.0
22.0
25.0
31.0
8.0
9.0
15.0
17.0
20.0
16.0
18.0
21.0
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5.（8/20μs current waveform）
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.4, 2017/09/18
ESD56101DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T1= 1.25 T = 8s
100
90
90
Time to half-value: T2= 20s
50
T2
10
10
0
t
60ns
30ns
20
0
T
tr = 0.7~1ns
Time (s)
T1
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
35
30
25
20
15
10
5
Pulse waveform: tp = 8/20s
800
700
600
500
400
300
200
100
0
f = 1MHz
VAC = 50mV
ESD56101D15
ESD56101D05
ESD56101D12
ESD56101D10
ESD56101D10
ESD56101D12
ESD56101D15
ESD56101D05
0
10 20 30 40 50 60 70 80 90
IPP - Peak pulse current (A)
0
2
4
6
8
10
VR - Reverse voltage (V)
Capacitance vs. Reverse voltage
12
14
Clamping voltage vs. Peak pulse current
10000
1000
100
100
80
60
40
20
0
0
25
50
75
100
125
150
1
10
100
1000
TA - Ambient temperature (oC)
Pulse time (s)
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
Power derating vs. Ambient temperature
Revision 1.4, 2017/09/18
4
ESD56101DXX
PACKAGE OUTLINE DIMENSIONS
DFN1610-2Lꢀ
D
L
e
h
TOP VIEW
BOTTOM VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
0.45
0.00
Typ.
0.50
Max.
0.55
0.05
A
A1
c
0.02
0.15 Ref.
0.80
b
0.75
0.35
1.55
0.95
0.85
0.45
1.65
1.05
L
0.40
D
E
e
1.60
1.00
1.10 BSC
0.20 Ref.
h
Recommended PCB Layout (Unit: mm)
0.600
0.625
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
1.225
1.850
Will Semiconductor Ltd.
5
Revision 1.4, 2017/09/18
ESD56101DXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
User Direction of Feed
RD Reel Dimension
7inch
8mm
2mm
Q1
13inch
W
P
Overall width of the carrier tape
12mm
4mm
Q2
16mm
8mm
Q3
Pitch between successive cavity centers
Pin1 Pin1 Quadrant
Q4
Will Semiconductor Ltd.
6
Revision 1.4, 2017/09/18
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