ESD56151W04-2/TR [WILLSEMI]
1-Line, Bi-directional, Transient Voltage Suppressor;
| 型号： | ESD56151W04-2/TR |
| 厂家： | 
WILLSEMI |
| 描述： | 1-Line, Bi-directional, Transient Voltage Suppressor |
| 文件： | 总6页 (文件大小：538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD56151WXX
ESD56151WXX
1-Line, Bi-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD56151WXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56151WXX is specifically designed to protect power
lines.
SOD-323
The ESD56151WXX is available in SOD-323 package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
Features
Reverse stand-off voltage: 4.5V ~ 5V
Surge protection according to IEC61000-4-5
see Table 4
Circuit diagram
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
Applications
X= Device code (O P)
* = Month code
Power supply protection
Power management
Marking (Top View)
Order information
Table 1.
Device
Package
Shipping
Marking
TO*
ESD56151W04-2/TR SOD-323
ESD56151W05-2/TR SOD-323
3000/Tape&Reel
3000/Tape&Reel
TP*
Will Semiconductor Ltd.
1
Revision 1.0, 2017/04/18
ESD56151WXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
2400
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR
Reverse leakage current
Clamping voltage
VCL
IPP
Peak pulse current
IHOLD
VHOLD
ITRIG
IR
VCL VTRIG
VRWM
IR
ITRIG
VRWM VTRIG VCL
VHOLD
V
IHOLD
VTRIG Reverse trigger voltage
ITRIG Reverse trigger current
VHOLD Reverse holding voltage
IHOLD Reverse holding current
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.0, 2017/04/18
ESD56151WXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
capacitance
F = 1MHz,
Reverse
Stand-off
Voltage
Breakdown voltage
VBR(V) IBR = 1mA
leakage current
IRM(μA) at VRWM
Type number
VRWM (V)
VR=0V (pF)
Max.
4.5
Min.
Typ.
5.3
Max.
Typ.
Max.
0.1
Typ.
280
Max.
350
4.7
5.3
6.4
7.1
ESD56151W04
ESD56151W05
-
-
5.0
6.3
0.1
400
450
Table 4.
Clamping voltage
VCL(V) at IPP = 16A,
tp = 100ns 2)3)
Clamping voltage
VCL(V) at
Rated peak pulse
current IPP (A)1)3)
Clamping voltage
VCL(V) at IPP(A)1)3)
Type number
VESD = 8kV 2)3)
ESD56151W04
ESD56151W05
150
145
16
16
6.5
6.7
7.0
7.5
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.0, 2017/04/18
ESD56151WXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T1= 1.25 T = 8μs
100
90
90
Time to half-value: T2= 20μs
50
T2
10
10
0
t
60ns
30ns
0
5
T1
10
15
Time (μs)
20
25
30
T
tr = 0.7~1ns
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
500
16
14
12
10
8
Pulse waveform: tp = 8/20s
f = 1MHz
VAC = 50mV
400
ESD56151W05
300
ESD56151W05
ESD56151W04
200
ESD56151W04
100
0
6
4
0
25
50
IPP - Peak pulse current (A)
Clamping voltage vs. Peak pulse current
75
100
125
150
0
1
2
3
4
5
6
VR - Reverse voltage (V)
Capacitance vs. Reverse voltage
100
80
60
40
20
0
10
1
0.1
1
10
100
1000
0
25
50
75
100
125
150
Pulse time (s)
TA - Ambient temperature (oC)
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
Power derating vs. Ambient temperature
4
Revision 1.0, 2017/04/18
ESD56151WXX
PACKAGE OUTLINE DIMENSIONS
SOD-323
D
A2
A1
D1
A
Side View
Top View
L1
L
Side View
Dimensions in Millimeters
Symbol
Min.
0.800
0.800
0.000
0.250
0.080
1.600
2.300
1.150
Typ.
Max.
1.100
0.900
0.100
0.400
0.177
1.800
2.800
1.400
A
A1
A2
b
-
0.850
-
-
c
-
D1
D
1.700
-
E
-
L
0.475 Ref.
L1
θ
0.100
0°
-
-
0.500
8°
Recommended land pattern (Unit: mm)
0.80
1.40
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 1.0, 2017/04/18
ESD56151WXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
User Direction of Feed
RD
W
Reel Dimension
7inch
13inch
12mm
4mm
Q2
Overall width of the carrier tape
8mm
2mm
Q1
16mm
8mm
Q3
P1
Pitch between successive cavity centers
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
6
Revision 1.0, 2017/04/18
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