ESD56201D12 [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;
| 型号： | ESD56201D12 |
| 厂家： | 
WILLSEMI |
| 描述： | 1-Line, Uni-directional, Transient Voltage Suppressor |
| 文件： | 总6页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD56201DXX
ESD56201DXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD56201DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56201DXX is specifically designed to protect power
lines.
DFN1610-2L (Bottom View)
The ESD56201DXX is available in DFN1610-2L package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
Features
Reverse stand-off voltage: 4.85V ~ 24V
Surge protection according to IEC61000-4-5
see Table 4
Circuit diagram
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Pin1
Pin2
x
*
Solid-state silicon technology
Applications
X= Device code (H I J K L S N)
* = Month code
Power supply protection
Power management
Marking (Top View)
Order information
Table 1.
Device
Package
Shipping
Marking
ESD56201D04-2/TR DFN1610-2L 3000/Tape&Reel
H*
ESD56201D05-2/TR DFN1610-2L 3000/Tape&Reel
ESD56201D10-2/TR DFN1610-2L 3000/Tape&Reel
ESD56201D12-2/TR DFN1610-2L 3000/Tape&Reel
ESD56201D15-2/TR DFN1610-2L 3000/Tape&Reel
ESD56201D18-2/TR DFN1610-2L 3000/Tape&Reel
ESD56201D20-2/TR DFN1610-2L 3000/Tape&Reel
I*
J*
K*
L*
S*
N*
Will Semiconductor Ltd.
1
Revision 1.5, 2018/02/08
ESD56201DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
1800
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.5, 2018/02/08
ESD56201DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Stand-off Breakdown voltage
leakage current
Forward voltage
VF(V) IF = 20mA
capacitance
F = 1MHz,
Voltage
VBR(V) IBR = 1mA
Type number
IRM(μA) at VRWM
VRWM (V)
VR=0V (pF)
Max.
4.85
5.0
Min.
5.2
Typ. Max. Type.
Max.
Min.
0.45
0.45
0.45
0.45
0.45
0.45
0.45
Max.
1.25
1.25
1.25
1.25
1.25
1.25
1.25
Typ.
1100
1050
545
Max.
1300
1250
650
5.7
7.1
6.2
7.6
5.0
2.0
0.1
0.1
0.1
0.1
0.1
ESD56201D04
ESD56201D05
ESD56201D10
ESD56201D12
ESD56201D15
ESD56201D18
ESD56201D20
-
-
-
-
-
-
-
6.6
10.0
12.0
15.0
18.0
20.0
10.7
12.7
16.0
19.2
21.4
11.3
13.7
17.5
21.1
23.2
12.3
14.6
19.0
23.0
25.0
425
510
325
350
270
300
250
275
Table 4.
1)2)
Rated peak pulse current IPP （A）1)2) Clamping voltage VCL(V) at IPP（A）
Type number
Max.
120
100
86
Typ.
10.5
11.0
17.5
19.5
27.0
32.0
35.0
Max.
12.0
13.0
20.0
22.0
30.0
35.0
38.0
ESD56201D04
ESD56201D05
ESD56201D10
ESD56201D12
ESD56201D15
ESD56201D18
ESD56201D20
75
60
50
45
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.5, 2018/02/08
ESD56201DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T1= 1.25 T = 8μs
100
90
90
Time to half-value: T2= 20μs
50
T2
10
10
0
t
60ns
30ns
0
5
T1
10
15
Time (μs)
20
25
30
T
tr = 0.7~1ns
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
Pulse waveform: tp = 8/20s
35
30
25
20
15
10
5
ESD56201D20
10
ESD56201D18
ESD56201D15
ESD56201D12
1
ESD56201D10
ESD56201D05
ESD56201D04
0.1
0
25
50
75
100
125
1
10
Pulse time (s)
Non-repetitive peak pulse power vs. Pulse time
100
1000
IPP - Peak pulse current (A)
Clamping voltage vs. Peak pulse current
2400
100
80
60
40
20
0
2000
1600
1200
800
400
0
ESD56201D04
ESD56201D05
-40
-20
0
20
40
60
80
0
25
50
TA - Ambient temperature (oC)
Power derating vs. Ambient temperature
75
100
125
150
TA - Ambient temperature (oC)
Leakage current vs. Ambient temperature
Revision 1.5, 2018/02/08
Will Semiconductor Ltd.
4
ESD56201DXX
PACKAGE OUTLINE DIMENSIONS
DFN1610-2L
D
L
e
h
TOP VIEW
BOTTOM VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
0.45
0.00
Typ.
0.50
Max.
0.55
0.05
A
A1
0.02
c
0.15 Ref.
0.80
b
0.75
0.35
1.55
0.95
0.85
0.45
1.65
1.05
L
0.40
D
1.60
E
1.00
e
1.10 BSC
0.20 Ref.
h
Recommended PCB Layout (Unit: mm)
0.600
0.625
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
1.225
1.850
Will Semiconductor Ltd.
5
Revision 1.5, 2018/02/08
ESD56201DXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
RD Reel Dimension
Overall width of the carrier tape
7inch
8mm
2mm
Q1
13inch
12mm
4mm
Q2
W
16mm
P1 Pitch between successive cavity centers
Pin1 Pin1 Quadrant
8mm
Q3
Q4
Will Semiconductor Ltd.
6
Revision 1.5, 2018/02/08
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