ESD56211D04-3/TR [WILLSEMI]
1-Line, Bi-directional, Transient Voltage Suppressor;
| 型号： | ESD56211D04-3/TR |
| 厂家： | 
WILLSEMI |
| 描述： | 1-Line, Bi-directional, Transient Voltage Suppressor |
| 文件： | 总6页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD56211DXX
ESD56211DXX
1-Line, Bi-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD56211DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
1 and 2
3
The ESD56211DXX is specifically designed to protect power
lines.
Circuit diagram
The ESD56211DXX is available in DFN2×2-3L package.
Standard products are Pb-free and Halogen-free.
PIN3
3
Features
Reverse stand-off voltage: 4.5V~5.0V
Surge protection according to IEC61000-4-5
see Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
1
2
PIN1
PIN2
Solid-state silicon technology
Pin configuration (Top View)
Applications
Power supply protection
Power management
6211
**YW
Order information
Table 1.
Pin1
Indicator
Device
code
Device
Package
Shipping
6211 = Series code
ESD56211D04-3/TR DFN2×2-3L
ESD56211D05-3/TR DFN2×2-3L
3000/Tape&Reel
3000/Tape&Reel
04
05
**
= Device code
YW = Date code
Marking
Will Semiconductor Ltd.
1
Revision 1.0, 2017/12//13
ESD56211DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
4500
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR
Reverse leakage current
Clamping voltage
VCL
IPP
Peak pulse current
IHOLD
VHOLD
ITRIG
IR
VCL VTRIG
VRWM
IR
ITRIG
VRWM VTRIG VCL
VHOLD
V
IHOLD
VTRIG Reverse trigger voltage
ITRIG Reverse trigger current
VHOLD Reverse holding voltage
IHOLD Reverse holding current
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.0, 2017/12//13
ESD56211DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
capacitance
F = 1MHz,
Reverse
Stand-off
Voltage
Breakdown voltage
VBR(V) IBR = 1mA
leakage current
IRM(μA) at VRWM
Type number
VRWM (V)
VR=0V (pF)
Max.
4.5
Min.
Typ.
5.4
Max.
Typ.
Max.
0.1
Typ.
1250
1550
Max.
1400
1700
4.8
5.4
6.0
7.0
ESD56211D04
ESD56211D05
-
-
5.0
6.2
0.1
Table 4.
1)2)
Rated peak pulse current IPP （A）
VCL(V) at 150A 1)2)
VCL(V) at IPP @Max 1)2)
Type number
Max.
400
Typ.
Max.
10
Typ.
13
Max.
15
ESD56211D04
ESD56211D05
8
9
350
11
12
14
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform).
2) Measured from pin 3 to pin 1 and pin 2.
.
Will Semiconductor Ltd.
3
Revision 1.0, 2017/12//13
ESD56211DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Front time: T1= 1.25 T = 8s
Front time: T1= 1.25 T = 10s
Time to half-value: T2= 1000s
100
90
100
90
Time to half-value: T2= 20s
50
50
T2
T2
10
0
10
0
T
20
1000
0
0
T
T1
Time (s)
Time (s)
T1
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
13
12
11
10
9
Pulse waveform:tp=8/20μs
f = 1MHz
VAC = 50mV
1600
1400
1200
1000
800
ESD56211D05
ESD56211D05
ESD56211D04
8
ESD56211D04
7
6
5
600
0
1
2
3
4
5
0
50
100
150
200
250
300
350
400
Ipp-Peak Pulse Current (A)
Clamping voltage vs. Peak pulse current
V - Reverse voltage (V)
CapacRitance vs. Reverse voltage
100
80
60
40
20
0
10
1
0
25
50
75
100
125
150
1
10
100
1000
TA - Ambient temperature (oC)
Pulse time (s)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.0, 2017/12//13
ESD56211DXX
PACKAGE OUTLINE DIMENSIONS
DFN2x2-3Lꢀ
Dimensions in Millimeters
Symbol
Min.
0.52
0.00
Typ.
0.59
0.02
0.10 Ref.
0.30
2.00
2.00
1.05
1.50
1.30
0.25
0.40
0.30
-
Max.
0.65
0.05
A
A1
A3
b
0.25
1.90
1.90
0.95
1.40
1.20
0.20
0.35
0.20
0.13
0.35
2.10
2.10
1.15
1.60
1.40
0.30
0.45
0.40
-
D
E
D2
E2
e
H
L
K
R
Recommend PCB Layout (Unit: mm)
1.30
Notes:
0.40
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
0.40
1.60
Will Semiconductor Ltd.
5
Revision 1.0, 2017/12/13
ESD56211DXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
Q4
Q4
RD Reel Dimension
7inch
13inch
12mm
4mm
Q2
W
P
Overall width of the carrier tape
Pitch between successive cavity centers
8mm
2mm
Q1
8mm
Q3
Pin1 Pin1 Quadrant
Q4
Will Semiconductor Ltd.
6
Revision 1.0, 2017/12/13
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