ESD5621W [WILLSEMI]

1-Line, Uni-directional, Transient Voltage Suppressor;


型号：	ESD5621W
厂家：	WILLSEMI
描述：	1-Line, Uni-directional, Transient Voltage Suppressor
文件：	总6页 (文件大小：606K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ESD5621WXX

1-Line, Uni-directional, Transient Voltage Suppressor

http//:www.sh-willsemi.com

Descriptions

The ESD5621WXX is a uni-directional TVS (Transient

Voltage Suppressor). It is specifically designed to protect

sensitive electronic components which are connected to

power lines, from over-stress caused by ESD (Electrostatic

Discharge), EFT (Electrical Fast Transients) and Lightning.

The ESD5621WXX may be used to provide ESD protection

up to ±30kV (contact and air discharge) according to

IEC61000-4-2, and with high surge capability used to protect

USB voltage bus pin (8/20μs) according to IEC61000-4-5.

SOD-323F (Bottom View)

The ESD5621WXX is available in SOD-323F package.

Standard products are Pb-free and Halogen-free.

Pin1

Pin2

Features

Circuit diagram



Reverse stand-off voltage: 4.5V ~ 15V

Surge protection according to IEC61000-4-5

see Table 4



ESD protection according to IEC61000-4-2

±30kV (contact and air discharge)

Low clamping voltage

Pin1

Pin2



Solid-state silicon technology

XX = Device code

= Month code

Applications

Marking (Top View)



Power supply protection

Power management

Order information

Table 1.

Device

Package

Shipping

Marking

TE*

ESD5621W04-2/TR SOD-323F

ESD5621W10-2/TR SOD-323F

3000/Tape&Reel

TJ*

ESD5621W-2/TR

SOD-323F

TD*

ESD5621W15-2/TR SOD-323F

Will Semiconductor Ltd.

Revision 1.3, 2017/07/25

ESD5621WXX

Absolute maximum ratings

Table 2.

Parameter

Peak pulse power (tp=8/20μs)

ESD according to IEC61000-4-2 air discharge

ESD according to IEC61000-4-2 contact discharge

Junction temperature

Symbol

Rating

Unit

Ppk

1400

±30

V_ESD

±30

T_J

T_OP

T_L

125

^oC

Operating temperature

-40~85

260

Lead temperature

Storage temperature

T_STG

-55~150

Electrical characteristics (T_A= 25^oC, unless otherwise noted)

I_PP

V_RWMReverse stand-off voltage

I_RReverse leakage current

V_BRReverse breakdown voltage

V_F

I_F

Forward voltage

Forward current

V_FC

I_PP

Forward clamping voltage

Peak pulse current

V_CL

I_PP

Clamping voltage

Peak pulse current

I_BR

I_R

V_FCV_F

V_RWMV_BRV_CL

I_F

I_PP

Definitions of electrical characteristics

Will Semiconductor Ltd.

Revision 1.3, 2017/07/25

ESD5621WXX

Electrical characteristics (T_A= 25^oC, unless otherwise noted)

Table 3.

Reverse

Junction

Reverse

Standoff

Voltage

V_RWM(V)

Breakdown voltage

V_BR(V) I_BR= 1mA

Forward voltage

V_F(V) I_F= 20mA

capacitance

F = 1MHz,

leakage current

Type number

I_RM(μA) at V_RWM

V_R=0V (pF)

Max

Min

Typ

Max

Typ

Max

5.0

Min

0.45

Max

1.25

Typ

900

350

300

270

Max

1200

500

ESD5621W04

ESD5621W10

ESD5621W

4.5

5.2

6.1

7.0

10.0

12.0

15.0

11.5

13.0

16.0

13.2

15.0

18.0

15.0

17.0

20.0

0.1

400

ESD5621W15

0.1

350

Table 4.

Clamping voltage

V_CL(V) at I_PP= 16A,

t_p= 100ns ²⁾³⁾

Clamping voltage

V_CL(V) at

Rated peak pulse

current I_PP（A）¹⁾³⁾V_CL(V) at I_PP（A）¹⁾³⁾

Clamping voltage

Type number

V_ESD= 8kV ²⁾³⁾

ESD5621W04

ESD5621W10

ESD5621W

14.5

25.0

27.5

31.0

7.0

8.0

15.0

16.0

20.0

16.0

17.0

21.0

ESD5621W15

Notes:

1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20µs current waveform)

2) Non-repetitive current pulse, according to IEC61000-4-2.

3) Measured from pin 1 to pin 2.

Will Semiconductor Ltd.

Revision 1.3, 2017/07/25

ESD5621WXX

Typical characteristics (T_A= 25^oC, unless otherwise noted)

100

Front time: T₁= 1.25 T = 8s

100

Time to half-value: T₂= 20s

T₂

60ns

30ns

t_r= 0.7~1ns

Time (s)

T₁

Time (ns)

Contact discharge current waveform per IEC61000-4-2

8/20μs waveform per IEC61000-4-5

1000

ESD5621W15

ESD5621W

ESD5621W10

ESD5621W04

Pulse waveform: t_p= 8/20s

f = 1MHz

V_AC= 50mV

900

800

700

600

500

400

300

200

100

ESD5621W04

ESD5621W10

ESD5621W15

ESD5621W

10 20 30 40 50 60 70 80 90 100

I_PP- Peak pulse current (A)

V_R- Reverse voltage (V)

Capacitance vs. Reverse voltage

Clamping voltage vs. Peak pulse current

10000

1000

100

125

150

100

1000

T_A- Ambient temperature (^oC)

Pulse time (s)

Non-repetitive peak pulse power vs. Pulse time

Power derating vs. Ambient temperature

Will Semiconductor Ltd.

Revision 1.3, 2017/07/25

ESD5621WXX

PACKAGE OUTLINE DIMENSIONS

SOD-323F

TOP VIEW

SIDE VIEW

Dimensions in Millimeters

Symbol

Min.

Typ.

Max.

1.10

0.18

0.40

1.80

1.35

2.80

0.60

0.08

0.25

1.60

1.15

2.30

0.13

1.70

1.25

Recommend land pattern (Unit: mm)

0.80

1.40

0.80

Notes:

This recommended land pattern is for reference

purposes only. Please consult your manufacturing

group to ensure your PCB design guidelines are met.

2.20

Will Semiconductor Ltd.

Revision 1.3, 2017/07/25

ESD5621WXX

TAPE AND REEL INFORMATION

Reel Dimensions

Tape Dimensions

Quadrant Assignments For PIN1 Orientation In Tape

User Direction of Feed

Reel Dimension

7inch

13inch

12mm

4mm

Overall width of the carrier tape

8mm

2mm

16mm

Pitch between successive cavity centers

8mm

Pin1 Pin1 Quadrant

Will Semiconductor Ltd.

Revision 1.3, 2017/07/25

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