ESD56241D18-3/TR [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;型号: | ESD56241D18-3/TR |
厂家: | WILLSEMI |
描述: | 1-Line, Uni-directional, Transient Voltage Suppressor |
文件: | 总6页 (文件大小:422K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESD56241DXX
ESD56241DXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
3
1 and 2
The ESD56241DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56241DXX is specifically designed to protect USB
port. TVS diode with higher surge capability is used to protect
USB voltage bus pin.
Circuit diagram
The ESD56241DXX is available in DFN2×2-3L package.
Standard products are Pb-free and Halogen-free.
PIN3
3
Features
Reverse stand-off voltage: 7.5V ~ 24V
Surge protection according to IEC61000-4-5
8/20μs waveform:
IPP see Table 4
Low clamping voltage
Solid-state silicon technology
1
2
PIN1
PIN2
Applications
Pin configuration (Top View)
Power supply protection
Power management
Order information
Table 1.
6241
**YW
Device
code
07
Device
Package
Shipping
ESD56241D07-3/TR DFN2×2-3L 3000/Tape&Reel
ESD56241D10-3/TR DFN2×2-3L 3000/Tape&Reel
ESD56241D12-3/TR DFN2×2-3L 3000/Tape&Reel
ESD56241D15-3/TR DFN2×2-3L 3000/Tape&Reel
ESD56241D18-3/TR DFN2×2 -3L 3000/Tape&Reel
ESD56241D20-3/TR DFN2×2-3L 3000/Tape&Reel
ESD56241D22-3/TR DFN2×2-3L 3000/Tape&Reel
ESD56241D24-3/TR DFN2×2-3L 3000/Tape&Reel
10
12
15
18
20
22
24
Pin1
Indicator
6241 = Series code
** = Device code
YW = Date code
Marking
Will Semiconductor Ltd.
1
Revision 1.4, 2018/12/26
ESD56241DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp=8/20μs)1)2)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
PPK
4500
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20μs current waveform)
2) Measured from pin 3 to pin 1 and pin 2.
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.4, 2018/12/26
ESD56241DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Reverse
Junction
Standoff
Voltage
VRWM (V)
Breakdown voltage
VBR(V) IBR = 1mA
Forward voltage
VF(V) IF = 20mA
capacitance
F=1MHz,
leakage current
IRM(nA) at VRWM
Type number
VR=0V (pF)
Max.
7.5
Min.
8.5
Typ.
9.3
Max.
10.0
12.5
15.0
18.6
23.0
25.0
26.5
29.0
Typ.
Max.
1000
1000
100
Min.
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
Max.
1.25
1.25
1.25
1.25
1.25
1.25
1.25
1.25
Typ.
2750
2150
1650
1250
1050
950
Max.
3300
2600
2000
1500
1150
1050
1000
900
ESD56241D07
ESD56241D10
ESD56241D12
ESD56241D15
ESD56241D18
ESD56241D20
ESD56241D22
ESD56241D24
-
-
10.0
12.0
15.0
18.0
20.0
22.0
24.0
10.7
12.8
16.0
19.2
21.4
23.5
25.6
11.6
13.9
17.3
21.1
23.2
25.0
27.3
-
-
-
-
-
100
100
100
100
900
-
100
800
Table 4.
Rated peak pulse current IPP (A)1)2) Clamping voltage VCL(V) at IPP(A)1)2)
Type number
Max.
240
205
200
160
150
140
130
120
Typ.
16
19
22
26
31
33
35
36
Max.
19
ESD56241D07
ESD56241D10
ESD56241D12
ESD56241D15
ESD56241D18
ESD56241D20
ESD56241D22
ESD56241D24
22
25
29
34
36
38
39
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
2) Measured from pin 3 to pin 1 and pin 2.
Will Semiconductor Ltd.
3
Revision 1.4, 2018/12/26
ESD56241DXX
Typical characteristics (TA = 25oC, unless otherwise noted)
40
Front time: T= 1.25T = 8μs
ESD56241D24
1
100
Time to half-value:T2= 20μs
ESD56241D22
35
90
ESD56241D20
ESD56241D18
ESD56241D15
30
25
ESD56241D12
50
20
ESD56241D10
ESD56241D07
T2
15
10
10
0
5
0
5
10
15
20
25
30
T
0
40
80
120
160
200
240
280
Time (μs)
T1
Ipp-Peak Pulse Current (A)
Clamping voltage vs. Peak pulse current
8/20μs waveform per IEC61000-4-5
100
80
60
40
20
0
10
1
0.1
1
10
100
1000
0
25
50
75
100
125
150
Pulse time (s)
TA - Ambient temperature o(C)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.4, 2018/12/26
ESD56241DXX
Package outline dimensions
DFN2×2-3L
E
E2
R
b
e
TOP VIEW
BOTTOM VIEW
Dimensions in Millimeters
Symbol
Min.
Typ.
Max.
A
A1
A3
b
0.50
0.00
0.58
0.02
0.127Ref.
0.30
2.00
2.00
1.05
1.50
1.30
-
0.65
0.05
Ⅰ
1.
Ⅰ
2. (N/A)
0.25
1.90
1.90
0.95
1.40
1.20
0.13
0.33
0.20
0.35
2.10
2.10
1.15
1.60
1.40
-
SIDE VIEW
D
E
Recommended land pattern (Unit: mm)
D2
E2
e
1.30
R
L
0.39
-
0.45
-
0.40
K
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
0.40
1.60
Will Semiconductor Ltd.
5
Revision 1.4, 2018/12/26
ESD56241DXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
Q4
Q4
RD
W
Reel Dimension
Overall width of the carrier tape
Pitch between successive cavity centers
7inch
8mm
2mm
Q1
13inch
12mm
4mm
Q2
P1
8mm
Q3
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
6
Revision 1.4, 2018/12/26
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