ESD56241D20-3/TR [WILLSEMI]

1-Line, Uni-directional, Transient Voltage Suppressor;


型号：	ESD56241D20-3/TR
厂家：	WILLSEMI
描述：	1-Line, Uni-directional, Transient Voltage Suppressor
文件：	总6页 (文件大小：422K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ESD56241DXX

1-Line, Uni-directional, Transient Voltage Suppressor

http//:www.sh-willsemi.com

Descriptions

1 and 2

The ESD56241DXX is a transient voltage suppressor

designed to protect power interfaces. It is suitable to replace

multiple discrete components in portable electronics.

The ESD56241DXX is specifically designed to protect USB

port. TVS diode with higher surge capability is used to protect

USB voltage bus pin.

Circuit diagram

The ESD56241DXX is available in DFN2×2-3L package.

Standard products are Pb-free and Halogen-free.

PIN3

Features



Reverse stand-off voltage: 7.5V ~ 24V

Surge protection according to IEC61000-4-5

8/20μs waveform:

I_PPsee Table 4



Low clamping voltage

Solid-state silicon technology

PIN1

PIN2

Applications

Pin configuration (Top View)



Power supply protection

Power management

Order information

Table 1.

6241

**YW

Device

code

Device

Package

Shipping

ESD56241D07-3/TR DFN2×2-3L 3000/Tape&Reel

ESD56241D10-3/TR DFN2×2-3L 3000/Tape&Reel

ESD56241D12-3/TR DFN2×2-3L 3000/Tape&Reel

ESD56241D15-3/TR DFN2×2-3L 3000/Tape&Reel

ESD56241D18-3/TR DFN2×2 -3L 3000/Tape&Reel

ESD56241D20-3/TR DFN2×2-3L 3000/Tape&Reel

ESD56241D22-3/TR DFN2×2-3L 3000/Tape&Reel

ESD56241D24-3/TR DFN2×2-3L 3000/Tape&Reel

Pin1

Indicator

6241 = Series code

** = Device code

YW = Date code

Marking

Will Semiconductor Ltd.

Revision 1.4, 2018/12/26

ESD56241DXX

Absolute maximum ratings

Table 2.

Parameter

Peak pulse power (tp=8/20μs)¹⁾²⁾

ESD according to IEC61000-4-2 air discharge

ESD according to IEC61000-4-2 contact discharge

Junction temperature

Symbol

Rating

Unit

P_PK

4500

±30

V_ESD

±30

T_J

T_OP

T_L

125

^oC

Operating temperature

-40~85

260

Lead temperature

Storage temperature

T_STG

-55~150

Notes:

1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20μs current waveform)

2) Measured from pin 3 to pin 1 and pin 2.

Electrical characteristics (T_A= 25^oC, unless otherwise noted)

I_PP

V_RWMReverse stand-off voltage

I_RReverse leakage current

V_BRReverse breakdown voltage

V_F

I_F

Forward voltage

Forward current

V_FC

I_PP

Forward clamping voltage

Peak pulse current

V_CL

I_PP

Clamping voltage

Peak pulse current

I_BR

I_R

V_FCV_F

V_RWMV_BRV_CL

I_F

I_PP

Definitions of electrical characteristics

Will Semiconductor Ltd.

Revision 1.4, 2018/12/26

ESD56241DXX

Electrical characteristics (T_A= 25^oC, unless otherwise noted)

Table 3.

Reverse

Junction

Standoff

Voltage

V_RWM(V)

Breakdown voltage

V_BR(V) I_BR= 1mA

Forward voltage

V_F(V) I_F= 20mA

capacitance

F=1MHz,

leakage current

I_RM(nA) at V_RWM

Type number

VR=0V (pF)

Max.

7.5

Min.

8.5

Typ.

9.3

Max.

10.0

12.5

15.0

18.6

23.0

25.0

26.5

29.0

Typ.

Max.

1000

100

Min.

0.45

Max.

1.25

Typ.

2750

2150

1650

1250

1050

950

Max.

3300

2600

2000

1500

1150

1050

1000

900

ESD56241D07

ESD56241D10

ESD56241D12

ESD56241D15

ESD56241D18

ESD56241D20

ESD56241D22

ESD56241D24

10.0

12.0

15.0

18.0

20.0

22.0

24.0

10.7

12.8

16.0

19.2

21.4

23.5

25.6

11.6

13.9

17.3

21.1

23.2

25.0

27.3

100

900

100

800

Table 4.

Rated peak pulse current I_PP（A）¹⁾²⁾Clamping voltage V_CL(V) at I_PP（A）¹⁾²⁾

Type number

Max.

240

205

200

160

150

140

130

120

Typ.

Max.

ESD56241D07

ESD56241D10

ESD56241D12

ESD56241D15

ESD56241D18

ESD56241D20

ESD56241D22

ESD56241D24

Notes:

1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)

2) Measured from pin 3 to pin 1 and pin 2.

Will Semiconductor Ltd.

Revision 1.4, 2018/12/26

ESD56241DXX

Typical characteristics (T_A= 25^oC, unless otherwise noted)

Front time: T= 1.25T = 8μs

ESD56241D24

100

Time to half-value:T₂= 20μs

ESD56241D22

ESD56241D20

ESD56241D18

ESD56241D15

ESD56241D12

ESD56241D10

ESD56241D07

T₂

120

160

200

240

280

Time (μs)

T₁

Ipp-Peak Pulse Current (A)

Clamping voltage vs. Peak pulse current

8/20μs waveform per IEC61000-4-5

100

0.1

100

1000

100

125

150

Pulse time (s)

T_A- Ambient temperature ^o(C)

Non-repetitive peak pulse power vs. Pulse time

Power derating vs. Ambient temperature

Will Semiconductor Ltd.

Revision 1.4, 2018/12/26

ESD56241DXX

Package outline dimensions

DFN2×2-3L

TOP VIEW

BOTTOM VIEW

Dimensions in Millimeters

Symbol

Min.

Typ.

Max.

0.50

0.00

0.58

0.02

0.127Ref.

0.30

2.00

1.05

1.50

1.30

0.65

0.05

Ⅰ

2. （N/A）

0.25

1.90

0.95

1.40

1.20

0.13

0.33

0.20

0.35

2.10

1.15

1.60

1.40

SIDE VIEW

Recommended land pattern (Unit: mm)

1.30

0.39

0.45

0.40

Notes:

This recommended land pattern is for reference

purposes only. Please consult your manufacturing

group to ensure your PCB design guidelines are met.

0.40

1.60

Will Semiconductor Ltd.

Revision 1.4, 2018/12/26

ESD56241DXX

TAPE AND REEL INFORMATION

Reel Dimensions

Tape Dimensions

Quadrant Assignments For PIN1 Orientation In Tape

Q1 Q2

Reel Dimension

Overall width of the carrier tape

Pitch between successive cavity centers

7inch

8mm

2mm

13inch

12mm

4mm

8mm

Pin1 Pin1 Quadrant

Will Semiconductor Ltd.

Revision 1.4, 2018/12/26

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