ESD5641D12-3/TR [WILLSEMI]

1-Line, Uni-directional, Transient Voltage Suppressor;


型号：	ESD5641D12-3/TR
厂家：	WILLSEMI
描述：	1-Line, Uni-directional, Transient Voltage Suppressor
文件：	总6页 (文件大小：369K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ESD5641DXX

1-Line, Uni-directional, Transient Voltage Suppressor

http//:www.sh-willsemi.com

Descriptions

1 and 2

The ESD5641DXX is a transient voltage suppressor

designed to protect power interfaces. It is suitable to replace

multiple discrete components in portable electronics.

The ESD5641DXX is specifically designed to protect USB

port. TVS diode with higher surge capability is used to protect

USB voltage bus pin.

Circuit diagram

The ESD5641DXX is available in DFN2×2-3L package.

Standard products are Pb-free and Halogen-free.

PIN3

Features



Reverse stand-off voltage: 7.5V ~ 15V

Surge protection according to IEC61000-4-5

8/20μs waveform: I_PPMsee Table 4

Surge protection according to IEC61643-321

10/1000μs waveform:

I_PPMsee Table 4

PIN1

PIN2



Low clamping voltage

Solid-state silicon technology

Pin configuration (Top View)

Applications



Power supply protection

Power management

Order information

5641

**YW

Table 1.

Device

code

Device

Package

Shipping

ESD5641D07-3/TR

ESD5641D10-3/TR

ESD5641D12-3/TR

ESD5641D15-3/TR

DFN2×2-3L 3000/Tape&Reel

Pin1

Indicator

5641 = Series code

= Device code

YW = Date code

Marking

Will Semiconductor Ltd.

Revision 1.5, 2017/12/11

ESD5641DXX

Absolute maximum ratings

Table 2.

Parameter

Peak pulse power (tp=8/20μs)¹⁾³⁾

Peak pulse power (tp=10/1000μs)²⁾³⁾

ESD according to IEC61000-4-2 air discharge

ESD according to IEC61000-4-2 contact discharge

Junction temperature

Symbol

P_PK

Rating

Unit

4000

350

P_PK

±30

V_ESD

±30

T_J

T_OP

T_L

125

^oC

Operating temperature

-40~85

260

Lead temperature

Storage temperature

T_STG

-55~150

Notes:

1) Non-repetitive current pulse, according to IEC61000-4-5.（8/20μs current waveform）

2) Non-repetitive current pulse, according to IEC61643-321.（10/1000μs current waveform）

3) Measured from pin 3 to pin 1 and pin 2.

Electrical characteristics (T_A= 25^oC, unless otherwise noted)

I_PP

V_RWMReverse stand-off voltage

I_RReverse leakage current

V_BRReverse breakdown voltage

V_F

I_F

Forward voltage

Forward current

V_FC

I_PP

Forward clamping voltage

Peak pulse current

V_CL

I_PP

Clamping voltage

Peak pulse current

I_BR

I_R

V_FCV_F

V_RWMV_BRV_CL

I_F

I_PP

Definitions of electrical characteristics

Will Semiconductor Ltd.

Revision 1.5, 2017/12/11

ESD5641DXX

Electrical characteristics (T_A= 25^oC, unless otherwise noted)

Table 3.

Reverse

Junction

Standoff

Voltage

V_RWM(V)

Max.

Breakdown voltage

V_BR(V) I_BR= 1mA

Forward voltage

V_F(V) I_F= 20mA

capacitance

F=1MHz,

leakage current

I_RM(nA) at V_RWM

Type number

VR=0V (pF)

Min.

8.0

Typ.

9.0

Max.

10.0

15.5

17.0

19.0

Typ.

Max.

1000

500

Min.

0.45

Max.

1.25

Typ.

2200

1500

1200

1000

Max.

3000

2000

1800

1500

ESD5641D07

ESD5641D10

ESD5641D12

ESD5641D15

7.5

10.0

12.0

15.0

11.5

13.0

16.0

13.5

15.0

17.5

100

Table 4.

Rated peak pulse

current I_PP（A）¹⁾³⁾V_CL(V) at I_PP（A）¹⁾³⁾

Clamping voltage

Rated peak pulse

current I_PP（A）²⁾³⁾

Clamping voltage

V_CL(V) at I_PP（A）²⁾³⁾

Type number

Max.

190

170

150

130

Max.

ESD5641D07

ESD5641D10

ESD5641D12

ESD5641D15

Notes:

1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)

2) Non-repetitive current pulse, according to IEC61643-321. (10/1000μs current waveform)

3) Measured from pin 3 to pin 1 and pin 2.

Will Semiconductor Ltd.

Revision 1.5, 2017/12/11

ESD5641DXX

Typical characteristics (T_A= 25^oC, unless otherwise noted)

Front time: T₁= 1.25 T = 8s

Front time: T₁= 1.25 T = 10s

Time to half-value: T₂= 1000s

100

Time to half-value: T₂= 20s

T₂

1000

T₁

Time (s)

T₁

8/20μs waveform per IEC61000-4-5

10/1000μs waveform per IEC61643-321

ESD5641D07

Pulse waveform:t_p=8/20μs

ESD5641D10

Pulse waveform:t_p=10/1000μs

ESD5641D07

ESD5641D10

ESD5641D12

ESD5641D15

ESD5641D12

ESD5641D15

100

150

200

Ipp-Peak Pulse Current (A)

Clamping voltage vs. Peak pulse current

100

10000

1000

100

1000

100

125

150

Pulse time (s)

T_A- Ambient temperature (^oC)

Non-repetitive peak pulse power vs. Pulse time

Power derating vs. Ambient temperature

Will Semiconductor Ltd.

Revision 1.5, 2017/12/11

ESD5641DXX

Package outline dimensions

DFN2×2-3L

Dimensions In Millimeters

Symbol

Min.

0.50

0.00

Typ.

0.58

0.02

0.10 REF.

0.30

2.00

1.05

1.50

1.30

0.25

0.30

0.39

Max.

0.65

0.05

0.25

1.90

0.95

1.40

1.20

0.20

0.33

0.13

0.35

2.10

1.15

1.60

1.40

0.30

0.40

0.45

Recommended land pattern (Unit: mm)

1.30

0.40

Notes:

This recommended land pattern is for reference

purposes only. Please consult your manufacturing

group to ensure your PCB design guidelines are met.

0.40

1.60

Will Semiconductor Ltd.

Revision 1.5, 2017/12/11

ESD5641DXX

TAPE AND REEL INFORMATION

Reel Dimensions

Tape Dimensions

Quadrant Assignments For PIN1 Orientation In Tape

Q1 Q2

User Direction of Feed

RD Reel Dimension

7inch

8mm

2mm

Q1

13inch

Overall width of the carrier tape

Pitch between successive cavity centers

12mm

4mm

Q2

8mm

Q3

Pin1 Pin1 Quadrant

Q4

Will Semiconductor Ltd.

Revision 1.5, 2017/12/11

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