ESD5661D12-2/TR [WILLSEMI]

1-Line, Uni-directional, Transient Voltage Suppressor;
ESD5661D12-2/TR
型号: ESD5661D12-2/TR
厂家: WILLSEMI    WILLSEMI
描述:

1-Line, Uni-directional, Transient Voltage Suppressor

文件: 总6页 (文件大小:381K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD5661DXX  
ESD5661DXX  
http//:www.sh-willsemi.com  
1-Line, Uni-directional, Transient Voltage Suppressor  
Descriptions  
Pin1  
Pin2  
The ESD5661DXX is a transient voltage suppressor  
designed to protect power interfaces. It is suitable to replace  
multiple discrete components in portable electronics.  
The ESD5661DXX is specifically designed to protect USB  
port. TVS diode with higher surge capability is used to protect  
USB voltage bus pin.  
FBP1608-2L (Bottom View)  
The ESD5661DXX is available in FBP1608-2L package.  
Standard products are Pb-free and Halogen-free.  
Pin1  
Pin2  
Features  
Circuit diagram  
Reverse stand-off voltage: 7V ~ 15V  
Surge protection according to IEC61000-4-5  
see Table 4  
ESD protection according to IEC61000-4-2  
±30kV (contact and air discharge)  
Low clamping voltage  
Pin1  
Pin2  
x
*
Solid-state silicon technology  
X
*
= Device codeB C T)  
= Month code  
Applications  
Marking (Top View)  
Power supply protection  
Power management  
Order information  
Table 1.  
Device  
Package  
Shipping  
Marking  
B*  
C*  
T*  
ESD5661D07-2/TR FBP1608-2L 10000/Tape&Reel  
ESD5661D12-2/TR FBP1608-2L 10000/Tape&Reel  
ESD5661D15-2/TR FBP1608-2L 10000/Tape&Reel  
Will Semiconductor Ltd.  
1
Revision 1.3, 2018/04/23  
ESD5661DXX  
Absolute maximum ratings  
Table 2.  
Parameter  
Peak pulse power (tp = 8/20μs)  
ESD according to IEC61000-4-2 air discharge  
ESD according to IEC61000-4-2 contact discharge  
Junction temperature  
Symbol  
Rating  
Unit  
Ppk  
1200  
±30  
W
VESD  
kV  
±30  
TJ  
TOP  
TL  
125  
oC  
oC  
oC  
oC  
Operating temperature  
-40~85  
260  
Lead temperature  
Storage temperature  
TSTG  
-55~150  
Electrical characteristics (TA = 25oC, unless otherwise noted)  
I
IPP  
VRWM Reverse stand-off voltage  
IR Reverse leakage current  
VBR Reverse breakdown voltage  
VF  
IF  
Forward voltage  
Forward current  
VFC  
IPP  
Forward clamping voltage  
Peak pulse current  
VCL  
IPP  
Clamping voltage  
Peak pulse current  
IBR  
IR  
VFC VF  
VRWM VBR VCL  
V
IF  
IPP  
Definitions of electrical characteristics  
Will Semiconductor Ltd.  
2
Revision 1.3, 2018/04/23  
ESD5661DXX  
Electrical characteristics (TA = 25oC, unless otherwise noted)  
Table 3.  
Reverse  
Junction  
Reverse  
Standoff  
Voltage  
VRWM (V)  
Breakdown voltage  
VBR(V) IBR = 1mA  
Forward voltage  
VF(V) IF = 20mA  
capacitance  
F = 1MHz,  
leakage current  
IRM(nA) at VRWM  
Type number  
VR=0V (pF)  
Max.  
Min.  
Typ.  
Max.  
Typ.  
10  
5
Max.  
1000  
100  
Min.  
0.45  
0.45  
0.45  
Max.  
1.25  
1.25  
1.25  
Typ.  
520  
290  
240  
Max.  
780  
ESD5661D07  
ESD5661D12  
ESD5661D15  
7
8.0  
9.0  
10.0  
17.0  
20.0  
12  
15  
13.0  
16.0  
15.0  
18.0  
440  
3
100  
350  
Table 4.  
Clamping voltage  
VCL(V) at IPP = 16A,  
tp = 100ns 2)3)  
Clamping voltage  
VCL(V) at  
Rated peak pulse  
current IPP (A)1)3)  
Clamping voltage  
VCL(V) at IPP(A)1)3)  
Type number  
VESD = 8kV 2)3)  
ESD5661D07  
ESD5661D12  
ESD5661D15  
65  
50  
40  
16  
25  
31  
10  
15  
20  
11  
16  
21  
Notes:  
1) Non-repetitive current pulse, according to IEC61000-4-5.8/20µs current waveform)  
2) Non-repetitive current pulse, according to IEC61000-4-2.  
3) Measured from pin 1 to pin 2.  
Will Semiconductor Ltd.  
3
Revision 1.3, 2018/04/23  
ESD5661DXX  
Typical characteristics (TA = 25oC, unless otherwise noted)  
100  
Front time: T1= 1.25 T = 8s  
100  
90  
Time to half-value: T2= 20s  
90  
50  
T2  
10  
10  
0
20  
0
t
60ns  
30ns  
T
Time (s)  
T1  
tr = 0.7~1ns  
Time (ns)  
Contact discharge current waveform per IEC61000-4-2  
8/20μs waveform per IEC61000-4-5  
800  
35  
ESD5661D15  
Pulse waveform: tp = 8/20s  
ESD5661D12  
f = 1MHz  
VAC = 50mV  
700  
30  
25  
20  
15  
10  
5
ESD5661D07  
600  
500  
400  
300  
200  
100  
0
ESD5661D07  
ESD5661D12  
ESD5661D15  
0
10  
20  
IPP - Peak pulse current (A)  
Clamping voltage vs. Peak pulse current  
30  
40  
50  
60  
70  
80  
0
2
4
6
8
10 12 14 16 18  
VR - Reverse voltage (V)  
Capacitance vs. Reverse voltage  
10000  
1000  
100  
100  
80  
60  
40  
20  
0
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
Pulse time (s)  
TA - Ambient temperature (oC)  
Non-repetitive peak pulse power vs. Pulse time  
Power derating vs. Ambient temperature  
Will Semiconductor Ltd.  
4
Revision 1.3, 2018/04/23  
ESD5661DXX  
PACKAGE OUTLINE DIMENSIONS  
FBP1608-2L  
L1  
L2  
E
D2  
D1  
D
L4  
L3  
L3  
e
TOP VIEW  
BOTTOM VIEW  
Dimensions in Millimeters  
Symbol  
Min.  
0.45  
0.01  
0.75  
0.52  
0.60  
1.55  
Typ.  
0.50  
Max.  
0.55  
0.09  
0.85  
0.68  
0.76  
1.65  
A1  
A
A
A1  
D
0.05  
SIDE VIEW  
0.80  
D1  
D2  
E
0.60  
0.68  
L1  
L2  
L3  
L4  
e
0.41Ref  
0.85 Ref  
0.08 Ref  
0.34 Ref  
0.95  
Recommended land pattern (Unit: mm)  
1.00  
0.30  
0.60  
0.90  
1.00  
Notes:  
This recommended land pattern is for reference  
purposes only. Please consult your manufacturing  
group to ensure your PCB design guidelines are met.  
Will Semiconductor Ltd.  
5
Revision 1.3, 2018/04/23  
ESD5661DXX  
TAPE AND REEL INFORMATION  
Reel Dimensions  
Tape Dimensions  
P1  
Quadrant Assignments For PIN1 Orientation In Tape  
Q1  
Q3  
Q2  
Q4  
Q1  
Q3  
Q2  
Q4  
User Direction of Feed  
RD  
W
Reel Dimension  
7inch  
8mm  
2mm  
Q1  
13inch  
Overall width of the carrier tape  
12mm  
4mm  
Q2  
16mm  
8mm  
Q3  
P1  
Pitch between successive cavity centers  
Q4  
Pin1 Pin1 Quadrant  
Will Semiconductor Ltd.  
6
Revision 1.3, 2018/04/23  

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