ESD5661D12-2/TR [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;型号: | ESD5661D12-2/TR |
厂家: | WILLSEMI |
描述: | 1-Line, Uni-directional, Transient Voltage Suppressor |
文件: | 总6页 (文件大小:381K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESD5661DXX
ESD5661DXX
http//:www.sh-willsemi.com
1-Line, Uni-directional, Transient Voltage Suppressor
Descriptions
Pin1
Pin2
The ESD5661DXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD5661DXX is specifically designed to protect USB
port. TVS diode with higher surge capability is used to protect
USB voltage bus pin.
FBP1608-2L (Bottom View)
The ESD5661DXX is available in FBP1608-2L package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
Features
Circuit diagram
Reverse stand-off voltage: 7V ~ 15V
Surge protection according to IEC61000-4-5
see Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Pin1
Pin2
x
*
Solid-state silicon technology
X
*
= Device code(B C T)
= Month code
Applications
Marking (Top View)
Power supply protection
Power management
Order information
Table 1.
Device
Package
Shipping
Marking
B*
C*
T*
ESD5661D07-2/TR FBP1608-2L 10000/Tape&Reel
ESD5661D12-2/TR FBP1608-2L 10000/Tape&Reel
ESD5661D15-2/TR FBP1608-2L 10000/Tape&Reel
Will Semiconductor Ltd.
1
Revision 1.3, 2018/04/23
ESD5661DXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
1200
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.3, 2018/04/23
ESD5661DXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Standoff
Voltage
VRWM (V)
Breakdown voltage
VBR(V) IBR = 1mA
Forward voltage
VF(V) IF = 20mA
capacitance
F = 1MHz,
leakage current
IRM(nA) at VRWM
Type number
VR=0V (pF)
Max.
Min.
Typ.
Max.
Typ.
10
5
Max.
1000
100
Min.
0.45
0.45
0.45
Max.
1.25
1.25
1.25
Typ.
520
290
240
Max.
780
ESD5661D07
ESD5661D12
ESD5661D15
7
8.0
9.0
10.0
17.0
20.0
12
15
13.0
16.0
15.0
18.0
440
3
100
350
Table 4.
Clamping voltage
VCL(V) at IPP = 16A,
tp = 100ns 2)3)
Clamping voltage
VCL(V) at
Rated peak pulse
current IPP (A)1)3)
Clamping voltage
VCL(V) at IPP(A)1)3)
Type number
VESD = 8kV 2)3)
ESD5661D07
ESD5661D12
ESD5661D15
65
50
40
16
25
31
10
15
20
11
16
21
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20µs current waveform)
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.3, 2018/04/23
ESD5661DXX
Typical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T1= 1.25 T = 8s
100
90
Time to half-value: T2= 20s
90
50
T2
10
10
0
20
0
t
60ns
30ns
T
Time (s)
T1
tr = 0.7~1ns
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
800
35
ESD5661D15
Pulse waveform: tp = 8/20s
ESD5661D12
f = 1MHz
VAC = 50mV
700
30
25
20
15
10
5
ESD5661D07
600
500
400
300
200
100
0
ESD5661D07
ESD5661D12
ESD5661D15
0
10
20
IPP - Peak pulse current (A)
Clamping voltage vs. Peak pulse current
30
40
50
60
70
80
0
2
4
6
8
10 12 14 16 18
VR - Reverse voltage (V)
Capacitance vs. Reverse voltage
10000
1000
100
100
80
60
40
20
0
1
10
100
1000
0
25
50
75
100
125
150
Pulse time (s)
TA - Ambient temperature (oC)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.3, 2018/04/23
ESD5661DXX
PACKAGE OUTLINE DIMENSIONS
FBP1608-2L
L1
L2
E
D2
D1
D
L4
L3
L3
e
TOP VIEW
BOTTOM VIEW
Dimensions in Millimeters
Symbol
Min.
0.45
0.01
0.75
0.52
0.60
1.55
Typ.
0.50
Max.
0.55
0.09
0.85
0.68
0.76
1.65
A1
A
A
A1
D
0.05
SIDE VIEW
0.80
D1
D2
E
0.60
0.68
-
L1
L2
L3
L4
e
0.41Ref
0.85 Ref
0.08 Ref
0.34 Ref
0.95
Recommended land pattern (Unit: mm)
1.00
0.30
0.60
0.90
1.00
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 1.3, 2018/04/23
ESD5661DXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
User Direction of Feed
RD
W
Reel Dimension
7inch
8mm
2mm
Q1
13inch
Overall width of the carrier tape
12mm
4mm
Q2
16mm
8mm
Q3
P1
Pitch between successive cavity centers
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
6
Revision 1.3, 2018/04/23
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