ESD5681N12-2/TR [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;型号: | ESD5681N12-2/TR |
厂家: | WILLSEMI |
描述: | 1-Line, Uni-directional, Transient Voltage Suppressor |
文件: | 总6页 (文件大小:578K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESD5681NXX
ESD5681NXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD5681NXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD5681NXX is specifically designed to protect USB
port. TVS diode with higher surge capability is used to protect
USB voltage bus pin.
DFN1006-2L (Bottom View)
The ESD5681NXX is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
Features
Reverse stand-off voltage: 7V ~ 15V
Surge protection according to IEC61000-4-5
see Table 4
Circuit diagram
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Pin1
Pin2
x
*
Solid-state silicon technology
X
*
= Device code(I,J,W)
Applications
= Month code
Marking (Top View)
Power supply protection
Power management
Order information
Table 1.
Device
Package
Shipping
Marking
I*
J*
ESD5681N07-2/TR DFN1006-2L 10000/Tape&Reel
ESD5681N12-2/TR DFN1006-2L 10000/Tape&Reel
ESD5681N15-2/TR DFN1006-2L 10000/Tape&Reel
W*
Will Semiconductor Ltd.
1
Revision 1.3, 2017/09/18
ESD5681NXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp=8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
450
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.3, 2017/09/18
ESD5681NXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Stand off
Voltage
Breakdown voltage
VBR(V) IBR = 1mA
Forward voltage
VF(V) IF = 20mA
capacitance
F=1MHz,
leakage current
IRM(nA) at VRWM
Type number
VRWM (V)
VR=0V (pF)
Max.
Min.
Typ.
Max.
Typ.
10
Max.
1000
100
Min.
0.45
0.45
0.45
Max.
1.25
1.25
1.25
Typ.
140
80
Max.
210
ESD5681N07
ESD5681N12
ESD5681N15
7
8.0
9.0
10.0
17.0
20.0
12
15
13.0
16.0
15.0
18.0
1
120
0.5
50
65
100
Table 4.
Clamping voltage
VCL(V) at IPP = 16A,
tp = 100ns 2)3)
Clamping voltage
VCL(V) at
Rated peak pulse
current IPP (A)1)3) VCL(V) at IPP(A)1)3)
Clamping voltage
Type number
VESD = 8kV 2)3)
ESD5681N07
ESD5681N12
ESD5681N15
27
18
15
16
24
29
11
19
22
11
19
24
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20μs current waveform)
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.3, 2017/09/18
ESD5681NXX
Typical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T = 1.25 T = 8s
1
100
90
90
Time to half-value: T = 20s
2
50
T2
10
10
0
t
60ns
30ns
0
T5
T1
10
15
Time (s)
20
25
30
tr = 0.7~1ns
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
Pulse waveform:tp=8/20μS
32
150
140
130
120
110
100
90
f = 1MHz
VAC = 50mV
30
28
26
24
22
20
18
16
14
12
10
8
80
70
60
50
40
30
20
10
ESD5681N07
ESD5681N12
ESD5681N07
ESD5681N12
ESD5681N15
ESD5681N15
0
2
4
6
8
10 12 14 16 18
VR - Reverse voltage (V)
Capacitance vs. Reverse voltage
-3
0
3
6
9
12
15
18
21
24
27
30
Ipp-Peak Pulse Current (A)
Clamping voltage vs. Peak pulse current
100
80
60
40
20
0
1000
100
1
10
100
1000
0
25
50
75
100
125
150
TA - Ambient temperature (oC)
Pulse time (s)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Revision 1.3, 2017/09/18
Will Semiconductor Ltd.
4
PACKAGE OUTLINE DIMENSIONS
DFN1006-2Lꢀ ꢀ
b
CATHODE MARKING
(Ⅰ)
(Ⅱ)
(Ⅲ)
L
E
D
e
Top View
Bottom View
(Ⅰ)
(Ⅱ)
A
A3
A1
Side View
Dimensions in Millimeters
Symbol
Min.
0.340
0.000
Typ.
0.450
Max.
0.530
0.050
A
A1
A3
D
0.020
0.125 Ref.
1.000
0.950
0.550
0.200
0.450
1.075
0.675
0.300
0.550
E
0.600
b
0.250
L
0.500
e
0.650 BSC
Recommended PCB Layout (Unit: mm)
0.30
0.55
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
0.85
1.40
Will Semiconductor Ltd.
5
Revision 1.3, 2017/09/18
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
User Direction of Feed
RD Reel Dimension
7inch
13inch
12mm
4mm
Q2
W
P
Overall width of the carrier tape
8mm
2mm
Q1
Pitch between successive cavity centers
8mm
Q3
Pin1 Pin1 Quadrant
Q4
Will Semiconductor Ltd.
6
Revision 1.3, 2017/09/18
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