ESD5681N15-2/TR [WILLSEMI]

1-Line, Uni-directional, Transient Voltage Suppressor;
ESD5681N15-2/TR
型号: ESD5681N15-2/TR
厂家: WILLSEMI    WILLSEMI
描述:

1-Line, Uni-directional, Transient Voltage Suppressor

文件: 总6页 (文件大小:578K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD5681NXX  
ESD5681NXX  
1-Line, Uni-directional, Transient Voltage Suppressor  
http//:www.sh-willsemi.com  
Descriptions  
The ESD5681NXX is a transient voltage suppressor  
designed to protect power interfaces. It is suitable to replace  
multiple discrete components in portable electronics.  
The ESD5681NXX is specifically designed to protect USB  
port. TVS diode with higher surge capability is used to protect  
USB voltage bus pin.  
DFN1006-2L (Bottom View)  
The ESD5681NXX is available in DFN1006-2L package.  
Standard products are Pb-free and Halogen-free.  
Pin1  
Pin2  
Features  
Reverse stand-off voltage: 7V ~ 15V  
Surge protection according to IEC61000-4-5  
see Table 4  
Circuit diagram  
ESD protection according to IEC61000-4-2  
±30kV (contact and air discharge)  
Low clamping voltage  
Pin1  
Pin2  
x
*
Solid-state silicon technology  
X
*
= Device codeI,J,W)  
Applications  
= Month code  
Marking (Top View)  
Power supply protection  
Power management  
Order information  
Table 1.  
Device  
Package  
Shipping  
Marking  
I*  
J*  
ESD5681N07-2/TR DFN1006-2L 10000/Tape&Reel  
ESD5681N12-2/TR DFN1006-2L 10000/Tape&Reel  
ESD5681N15-2/TR DFN1006-2L 10000/Tape&Reel  
W*  
Will Semiconductor Ltd.  
1
Revision 1.3, 2017/09/18  
ESD5681NXX  
Absolute maximum ratings  
Table 2.  
Parameter  
Peak pulse power (tp=8/20μs)  
ESD according to IEC61000-4-2 air discharge  
ESD according to IEC61000-4-2 contact discharge  
Junction temperature  
Symbol  
Rating  
Unit  
Ppk  
450  
±30  
W
VESD  
kV  
±30  
TJ  
TOP  
TL  
125  
oC  
oC  
oC  
oC  
Operating temperature  
-40~85  
260  
Lead temperature  
Storage temperature  
TSTG  
-55~150  
Electrical characteristics (TA = 25oC, unless otherwise noted)  
I
IPP  
VRWM Reverse stand-off voltage  
IR Reverse leakage current  
VBR Reverse breakdown voltage  
VF  
IF  
Forward voltage  
Forward current  
VFC  
IPP  
Forward clamping voltage  
Peak pulse current  
VCL  
IPP  
Clamping voltage  
Peak pulse current  
IBR  
IR  
VFC VF  
VRWM VBR VCL  
V
IF  
IPP  
Definitions of electrical characteristics  
Will Semiconductor Ltd.  
2
Revision 1.3, 2017/09/18  
ESD5681NXX  
Electrical characteristics (TA = 25oC, unless otherwise noted)  
Table 3.  
Reverse  
Junction  
Reverse  
Stand off  
Voltage  
Breakdown voltage  
VBR(V) IBR = 1mA  
Forward voltage  
VF(V) IF = 20mA  
capacitance  
F=1MHz,  
leakage current  
IRM(nA) at VRWM  
Type number  
VRWM (V)  
VR=0V (pF)  
Max.  
Min.  
Typ.  
Max.  
Typ.  
10  
Max.  
1000  
100  
Min.  
0.45  
0.45  
0.45  
Max.  
1.25  
1.25  
1.25  
Typ.  
140  
80  
Max.  
210  
ESD5681N07  
ESD5681N12  
ESD5681N15  
7
8.0  
9.0  
10.0  
17.0  
20.0  
12  
15  
13.0  
16.0  
15.0  
18.0  
1
120  
0.5  
50  
65  
100  
Table 4.  
Clamping voltage  
VCL(V) at IPP = 16A,  
tp = 100ns 2)3)  
Clamping voltage  
VCL(V) at  
Rated peak pulse  
current IPP A1)3) VCL(V) at IPPA1)3)  
Clamping voltage  
Type number  
VESD = 8kV 2)3)  
ESD5681N07  
ESD5681N12  
ESD5681N15  
27  
18  
15  
16  
24  
29  
11  
19  
22  
11  
19  
24  
Notes:  
1) Non-repetitive current pulse, according to IEC61000-4-5.8/20μs current waveform)  
2) Non-repetitive current pulse, according to IEC61000-4-2.  
3) Measured from pin 1 to pin 2.  
Will Semiconductor Ltd.  
3
Revision 1.3, 2017/09/18  
ESD5681NXX  
Typical characteristics (TA = 25oC, unless otherwise noted)  
100  
Front time: T = 1.25 T = 8s  
1
100  
90  
90  
Time to half-value: T = 20s  
2
50  
T2  
10  
10  
0
t
60ns  
30ns  
0
T5  
T1  
10  
15  
Time (s)  
20  
25  
30  
tr = 0.7~1ns  
Time (ns)  
Contact discharge current waveform per IEC61000-4-2  
8/20μs waveform per IEC61000-4-5  
Pulse waveform:tp=8/20μS  
32  
150  
140  
130  
120  
110  
100  
90  
f = 1MHz  
VAC = 50mV  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
80  
70  
60  
50  
40  
30  
20  
10  
ESD5681N07  
ESD5681N12  
ESD5681N07  
ESD5681N12  
ESD5681N15  
ESD5681N15  
0
2
4
6
8
10 12 14 16 18  
VR - Reverse voltage (V)  
Capacitance vs. Reverse voltage  
-3  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
Ipp-Peak Pulse Current (A)  
Clamping voltage vs. Peak pulse current  
100  
80  
60  
40  
20  
0
1000  
100  
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
TA - Ambient temperature (oC)  
Pulse time (s)  
Non-repetitive peak pulse power vs. Pulse time  
Power derating vs. Ambient temperature  
Revision 1.3, 2017/09/18  
Will Semiconductor Ltd.  
4
PACKAGE OUTLINE DIMENSIONS  
DFN1006-2Lꢀ ꢀ  
b
CATHODE MARKING  
(Ⅰ)  
(Ⅱ)  
(Ⅲ)  
L
E
D
e
Top View  
Bottom View  
(Ⅰ)  
(Ⅱ)  
A
A3  
A1  
Side View  
Dimensions in Millimeters  
Symbol  
Min.  
0.340  
0.000  
Typ.  
0.450  
Max.  
0.530  
0.050  
A
A1  
A3  
D
0.020  
0.125 Ref.  
1.000  
0.950  
0.550  
0.200  
0.450  
1.075  
0.675  
0.300  
0.550  
E
0.600  
b
0.250  
L
0.500  
e
0.650 BSC  
Recommended PCB Layout (Unit: mm)  
0.30  
0.55  
Notes:  
This recommended land pattern is for reference  
purposes only. Please consult your manufacturing  
group to ensure your PCB design guidelines are met.  
0.85  
1.40  
Will Semiconductor Ltd.  
5
Revision 1.3, 2017/09/18  
TAPE AND REEL INFORMATION  
Reel Dimensions  
Tape Dimensions  
P1  
Quadrant Assignments For PIN1 Orientation In Tape  
Q1  
Q3  
Q2  
Q4  
Q1  
Q3  
Q2  
Q4  
User Direction of Feed  
RD Reel Dimension  
7inch  
13inch  
12mm  
4mm  
Q2  
W
P
Overall width of the carrier tape  
8mm  
2mm  
Q1  
Pitch between successive cavity centers  
8mm  
Q3  
Pin1 Pin1 Quadrant  
Q4  
Will Semiconductor Ltd.  
6
Revision 1.3, 2017/09/18  

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