WSB20100TF-3/T [WILLSEMI]
Power Schottky Barrier Rectifier;
| 型号： | WSB20100TF-3/T |
| 厂家： | 
WILLSEMI |
| 描述： | Power Schottky Barrier Rectifier |
| 文件： | 总3页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSB20100T/WSB20100TF
WSB20100T/WSB20100TF
Power Schottky Barrier Rectifier
Features
www.sh-willsemi.com
2x10A average rectified forward current
Low forward voltage and Low leakage current
Excellent high junction temperature stability
High forward surge capability
TO-220
TO-220F
Circuit
Applications
High frequency switch model power supplies
DC-DC Convertors, Power adapters
TO-220
TO-220F
Marking
Absolute maximum ratings
Parameter
Symbol
VRM
VR
Value
100
100
10
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
Per diode
IF
A
Average rectified forward current
Per device
IF
20
A
(1)
IFSM
TJ
100
150
A
Peak Forward Surge Current
Junction temperature
0C
0C
0C
Operating temperature
Storage temperature
Topr
Tstg
-55 ~ 150
-55 ~ 150
Thermal Resistance Ratings
TO-220
2.2
4.4
Maximum Thermal Resistance
Junction To case (Per leg)
RθJC
°C/W
TO-220F
Order information
Device
Units/Tube
Package
TO-220
Marking
(2)
(3)
WSB20100T-3/T
WSB20100TF-3/T
WLSI100T20YW
WLSI20100TFYW
50
TO-220F
Will Semiconductor Ltd.
1
2014/9/2 – Rev. 1.1
WSB20100T/WSB20100TF
Note 1 : Pulse Width=8.3ms，Single Sine Pulse
Note 2 : WLSI=Willsemi; 100T= Device code;20=Special Code; Y=Year; W=Week (A~z)
Note 3 : WLSI=Willsemi; 20100= Device code; TF=Special Code; Y=Year; W=Week (A~z)
Electronics characteristics (TA=25oC, Per diode)
Parameter
Symbol
Condition
IR=0.5mA
Min.
Typ.
Max.
Unit
V
Reverse Breakdown Voltage
Forward voltage
VR
VF
IR
100
IF=10A
0.85
0.1
V
Reverse current
VR=100V
-
-
mA
pF
Junction capacitance
CJ
VR=25V, F=1MHz
110
Typical characteristics (Ta=25oC, Per diode)
T=150oC
10
0.01
1E-3
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
1500C
1250C
T=85oC
T=125oC
850C
1
250C
00C
-500C
T=25oC
0.1
T=0oC
0.01
1E-3
T=-50oC
0
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
Reverse Voltage (V)
Forward Voltage (V)
Forward voltage vs. Forward current
Reverse current vs. Reverse voltage
F=1MHZ
10
1000
100
10
WSB20100T
WSB20100TF
8
6
4
2
0
0
5
10
15
20
25
0
30
60
90
120
150
180
Case Temperature (0C)
Reverse Voltage (V)
Forward Current Derating Curve
Junction capacitance vs. Reverse voltage
2014/9/2 – Rev. 1.1
Will Semiconductor Ltd.
2
WSB20100T/WSB20100TF
Will Semiconductor Ltd.
3
2014/9/2 – Rev. 1.1
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