W9425G6JH [WINBOND]
4 M × 4 BANKS × 16 BITS DDR SDRAM; 4米× 4组× 16位DDR SDRAM
| 型号： | W9425G6JH |
| 厂家： | 
WINBOND |
| 描述： | 4 M × 4 BANKS × 16 BITS DDR SDRAM |
| 文件： | 总52页 (文件大小：828K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
W9425G6JH
4 M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION.............................................................................................................................4
FEATURES....................................................................................................................................................4
KEY PARAMETERS ......................................................................................................................................5
PIN CONFIGURATION ..................................................................................................................................6
PIN DESCRIPTION........................................................................................................................................7
BLOCK DIAGRAM .........................................................................................................................................8
FUNCTIONAL DESCRIPTION.......................................................................................................................9
7.1
7.2
Power Up Sequence ..........................................................................................................................9
Command Function..........................................................................................................................10
7.2.1 Bank Activate Command......................................................................................................10
7.2.2 Bank Precharge Command ..................................................................................................10
7.2.3 Precharge All Command ......................................................................................................10
7.2.4 Write Command ...................................................................................................................10
7.2.5 Write with Auto-precharge Command...................................................................................10
7.2.6 Read Command ...................................................................................................................10
7.2.7 Read with Auto-precharge Command ..................................................................................10
7.2.8 Mode Register Set Command ..............................................................................................11
7.2.9 Extended Mode Register Set Command ..............................................................................11
7.2.10 No-Operation Command ......................................................................................................11
7.2.11 Burst Read Stop Command..................................................................................................11
7.2.12 Device Deselect Command..................................................................................................11
7.2.13 Auto Refresh Command.......................................................................................................11
7.2.14 Self Refresh Entry Command...............................................................................................12
7.2.15 Self Refresh Exit Command .................................................................................................12
7.2.16 Data Write Enable /Disable Command.................................................................................12
7.3
7.4
7.5
7.6
7.7
7.8
7.9
Read Operation................................................................................................................................12
Write Operation ................................................................................................................................13
Precharge.........................................................................................................................................13
Burst Termination.............................................................................................................................13
Refresh Operation............................................................................................................................13
Power Down Mode...........................................................................................................................14
Input Clock Frequency Change during Precharge Power Down Mode ............................................14
7.10 Mode Register Operation .................................................................................................................14
7.10.1 Burst Length field (A2 to A0) ................................................................................................14
7.10.2 Addressing Mode Select (A3)...............................................................................................15
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7.10.3 CAS Latency field (A6 to A4)................................................................................................16
7.10.4 DLL Reset bit (A8)................................................................................................................16
7.10.5 Mode Register /Extended Mode register change bits (BA0, BA1)........................................16
7.10.6 Extended Mode Register field ..............................................................................................16
7.10.7 Reserved field ......................................................................................................................16
8.
9.
OPERATION MODE ....................................................................................................................................17
8.1
8.2
8.3
8.4
Simplified Truth Table ......................................................................................................................17
Function Truth Table ........................................................................................................................18
Function Truth Table for CKE...........................................................................................................21
Simplified Stated Diagram................................................................................................................22
ELECTRICAL CHARACTERISTICS ............................................................................................................23
9.1
9.2
9.3
9.4
9.5
9.6
9.7
Absolute Maximum Ratings..............................................................................................................23
Recommended DC Operating Conditions ........................................................................................23
Capacitance .....................................................................................................................................24
Leakage and Output Buffer Characteristics......................................................................................24
DC Characteristics ...........................................................................................................................25
AC Characteristics and Operating Condition....................................................................................26
AC Test Conditions ..........................................................................................................................27
10. SYSTEM CHARACTERISTICS FOR DDR SDRAM.....................................................................................29
10.1 Table 1: Input Slew Rate for DQ, DQS, and DM ..............................................................................29
10.2 Table 2: Input Setup & Hold Time Derating for Slew Rate ...............................................................29
10.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate....................................................29
10.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate ....................................29
10.5 Table 5: Output Slew Rate Characteristics (X16 Devices only)........................................................29
10.6 Table 6: Output Slew Rate Matching Ratio Characteristics..............................................................30
10.7 Table 7: AC Overshoot/Undershoot Specification for Address and Control Pins..............................30
10.8 Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins...............................31
10.9 System Notes:..................................................................................................................................32
11. TIMING WAVEFORMS ................................................................................................................................34
11.1 Command Input Timing....................................................................................................................34
11.2 Timing of the CLK Signals................................................................................................................34
11.3 Read Timing (Burst Length = 4) .......................................................................................................35
11.4 Write Timing (Burst Length = 4) .......................................................................................................36
11.5 DM, DATA MASK (W9425G6JH) .....................................................................................................37
11.6 Mode Register Set (MRS) Timing.....................................................................................................38
11.7 Extend Mode Register Set (EMRS) Timing ......................................................................................39
11.8 Auto-precharge Timing (Read Cycle, CL = 2) ..................................................................................40
11.9 Auto-precharge Timing (Read cycle, CL = 2), continued..................................................................41
11.10 Auto-precharge Timing (Write Cycle) ...............................................................................................42
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11.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8)..............................................................................43
11.12 Burst Read Stop (BL = 8) .................................................................................................................43
11.13 Read Interrupted by Write & BST (BL = 8) .......................................................................................44
11.14 Read Interrupted by Precharge (BL = 8) ..........................................................................................44
11.15 Write Interrupted by Write (BL = 2, 4, 8)...........................................................................................45
11.16 Write Interrupted by Read (CL = 2, BL = 8)......................................................................................45
11.17 Write Interrupted by Read (CL = 3, BL = 4)......................................................................................46
11.18 Write Interrupted by Precharge (BL = 8)...........................................................................................46
11.19 2 Bank Interleave Read Operation (CL = 2, BL = 2).........................................................................47
11.20 2 Bank Interleave Read Operation (CL = 2, BL = 4).........................................................................47
11.21 4 Bank Interleave Read Operation (CL = 2, BL = 2).........................................................................48
11.22 4 Bank Interleave Read Operation (CL = 2, BL = 4).........................................................................48
11.23 Auto Refresh Cycle ..........................................................................................................................49
11.24 Precharged/Active Power Down Mode Entry and Exit Timing..........................................................49
11.25 Input Clock Frequency Change during Precharge Power Down Mode Timing.................................49
11.26 Self Refresh Entry and Exit Timing...................................................................................................50
12. PACKAGE SPECIFICATION .......................................................................................................................51
12.1 TSOP 66 lI – 400 mil ........................................................................................................................51
13. REVISION HISTORY ...................................................................................................................................52
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1. GENERAL DESCRIPTION
W9425G6JH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. W9425G6JH delivers a data bandwidth
of up to 500M words per second (-4). To fully comply with the personal computer industrial standard,
W9425G6JH is sorted into the following speed grades: -4, -5 and -5I. The -4 is compliant to the
DDR500/CL3 and CL4 specification. The -5/-5I is compliant to the DDR400/CL3 specification (the -5I
grade which is guaranteed to support -40°C ~ 85°C).
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9425G6JH is ideal for main memory in
high performance applications.
2. FEATURES
•
•
•
•
2.5V ±0.2V Power Supply for DDR400
2.4V~2.7V Power Supply for DDR500
Up to 250 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
•
•
•
•
•
•
•
•
•
•
•
•
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5, 3 and 4
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8µS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant
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3. KEY PARAMETERS
SYMBOL
DESCRIPTION
MIN/MAX.
Min.
-4
-
-5/-5I
7.5 nS
12 nS
6 nS
CL = 2
CL = 2.5
CL = 3
CL = 4
Max.
Min.
-
-
Max.
Min.
-
12 nS
5 nS
Clock Cycle Time
tCK
4 nS
Max.
Min.
12 nS
4 nS
12 nS
-
Max.
Min.
12 nS
36 nS
52 nS
75 mA
90 mA
140 mA
135 mA
70 mA
2 mA
-
Active to Precharge Command Period
Active to Ref/Active Command Period
40 nS
55 nS
65 mA
80 mA
120 mA
115 mA
65 mA
2 mA
tRAS
tRC
Min.
Operating Current: One Bank Active-Precharge
Operating Current: One Bank Active-Read-Precharge
Burst Operation Current
Max.
Max.
Max.
Max.
Max.
Max.
IDD0
IDD1
IDD4R
IDD4W
IDD5
IDD6
Burst Operation Current
Auto Refresh Burst current
Self-Refresh Current
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4. PIN CONFIGURATION
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
1
2
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
3
4
5
6
7
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
8
9
10
11
12
13
14
VDDQ
DQ8
NC
VSSQ
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
VDDQ
LDQS
NC
UDQS
NC
VDD
VREF
VSS
UDM
CLK
CLK
CKE
NC
NC
LDM
WE
CAS
RAS
CS
NC
A12
A11
A9
BA0
BA1
A10/AP
A0
A8
A7
A1
A6
A2
A5
A3
A4
VDD
VSS
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5. PIN DESCRIPTION
PIN
PIN NUMBER
NAME
FUNCTION
DESCRIPTION
Multiplexed pins for row and column address.
Row address: A0 − A12.
28 − 32,
A0 − A12
35 − 42
Address
Column address: A0 − A8. (A10 is used for Auto-precharge)
Select bank to activate during row address latch time, or
bank to read/write during column address latch time.
26, 27
BA0, BA1
Bank Select
2, 4, 5, 7, 8, 10,
11, 13, 54, 56, 57,
59, 60, 62, 63, 65
The DQ0 – DQ15 input and output data are synchronized
with both edges of DQS.
DQ0 −
DQ15
Data Input/ Output
DQS is Bi-directional signal. DQS is input signal during write
operation and output signal during read operation. It is Edge-
aligned with read data, Center-aligned with write data.
LDQS,
UDQS
16,51
24
Data Strobe
Chip Select
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and previous
operation continues.
CS
RAS ,
Command inputs (along with CS ) define the command
being entered.
23, 22, 21
20, 47
Command Inputs
Write Mask
CAS , WE
When DM is asserted “high” in burst write, the input data is
masked. DM is synchronized with both edges of DQS.
LDM, UDM
All address and control input signals are sampled on the
crossing of the positive edge of CLK and negative edge of
CLK,
CLK
Differential Clock
Inputs
45, 46
44
CLK .
CKE controls the clock activation and deactivation. When
CKE is low, Power Down mode, Suspend mode, or Self
Refresh mode is entered.
CKE
Clock Enable
49
VREF
VDD
VSS
Reference Voltage VREF is reference voltage for inputs.
1, 18, 33
34, 48, 66
Power
Power for logic circuit inside DDR SDRAM.
Ground for logic circuit inside DDR SDRAM.
Ground
Power for I/O
Buffer
Separated power from VDD, used for output buffer, to
improve noise.
3, 9, 15, 55, 61
6, 12, 52, 58, 64
VDDQ
VSSQ
NC
Ground for I/O
Buffer
Separated ground from VSS, used for output buffer, to
improve noise.
14, 17, 19, 25,
43, 50, 53
No Connection
No connection
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6. BLOCK DIAGRAM
CLK
DLL
CLOCK
CLK
BUFFER
CKE
CONTROL
CS
SIGNAL
GENERATOR
RAS
CAS
COMMAND
DECODER
COLUMN DECODER
COLUMN DECODER
WE
CELL ARRAY
BANK #0
CELL ARRAY
BANK #1
A10
A0
MODE
REGISTER
SENSE AMPLIFIER
SENSE AMPLIFIER
ADDRESS
BUFFER
A9
A11
A12
BA0
BA1
PREFETCH REGISTER
DQ0
DQ
DATA CONTROL
CIRCUIT
BUFFER
DQ15
COLUMN
COUNTER
LDQS
UDQS
REFRESH
COUNTER
LDM
UDM
COLUMN DECODER
COLUMN DECODER
CELL ARRAY
BANK #2
CELL ARRAY
BANK #3
SENSE AMPLIFIER
SENSE AMPLIFIER
NOTE: The cell array configuration is 8192 * 512 * 16
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7. FUNCTIONAL DESCRIPTION
7.1 Power Up Sequence
(1) Apply power and attempt to CKE at a low state ( ≤ 0.2V), all other inputs may be undefined
1) Apply VDD before or at the same time as VDDQ.
2) Apply VDDQ before or at the same time as VTT and VREF.
(2) Start Clock and maintain stable condition for 200 µS (min.).
(3) After stable power and clock, apply NOP and take CKE high.
(4) Issue precharge command for all banks of the device.
(5) Issue EMRS (Extended Mode Register Set) to enable DLL and establish Output Driver Type.
(6) Issue MRS (Mode Register Set) to reset DLL and set device to idle with bit A8.
(An additional 200 cycles(min) of clock are required for DLL Lock before any executable
command applied.)
(7) Issue precharge command for all banks of the device.
(8) Issue two or more Auto Refresh commands.
(9) Issue MRS-Initialize device operation with the reset DLL bit deactivated A8 to low.
CLK
CLK
ANY
CMD
Command
PREA
EMRS
2 Clock min.
MRS
PREA
AREF
AREF
MRS
tRFC
2 Clock min.
2 Clock min.
tRP
tRP
tRFC
200 Clock min.
Inputs
maintain stable
for 200 µS min.
Disable DLL reset with A8 = Low
Enable DLL
DLL reset with A8 = High
Initialization sequence after power-up
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7.2 Command Function
7.2.1 Bank Activate Command
(RAS = "L", CAS = "H", WE = "H", BA0, BA1 = Bank, A0 to A12 = Row Address)
The Bank Activate command activates the bank designated by the BA (Bank address) signal. Row
addresses are latched on A0 to A12 when this command is issued and the cell data is read out of
the sense amplifiers. The maximum time that each bank can be held in the active state is specified
as tRAS (max). After this command is issued, Read or Write operation can be executed.
7.2.2 Bank Precharge Command
(RAS = "L", CAS = "H", WE = "L", BA0, BA1 = Bank, A10 = "L", A0 to A9, A11, A12 = Don’t
Care)
The Bank Precharge command percharges the bank designated by BA. The precharged bank is
switched from the active state to the idle state.
7.2.3 Precharge All Command
(RAS = "L", CAS = "H", WE = "L", BA0, BA1 = Don’t Care, A10 = "H", A0 to A9, A11, A12 =
Don’t Care)
The Precharge All command precharges all banks simultaneously. Then all banks are switched to
the idle state.
7.2.4 Write Command
(RAS = "H", CAS = "L", WE = "L", BA0, BA1 = Bank, A10 = "L", A0 to A8 = Column Address)
The write command performs a Write operation to the bank designated by BA. The write data are
latched at both edges of DQS. The length of the write data (Burst Length) and column access
sequence (Addressing Mode) must be in the Mode Register at power-up prior to the Write
operation.
7.2.5 Write with Auto-precharge Command
(RAS = "H", CAS = "L", WE = "L", BA0, BA1 = Bank, A10 = "H", A0 to A8 = Column Address)
The Write with Auto-precharge command performs the Precharge operation automatically after the
Write operation. This command must not be interrupted by any other commands.
7.2.6 Read Command
(RAS = "H", CAS = "L", WE = "H", BA0, BA1 = Bank, A10 = "L", A0 to A8 = Column Address)
The Read command performs a Read operation to the bank designated by BA. The read data are
synchronized with both edges of DQS. The length of read data (Burst Length), Addressing Mode
and CAS Latency (access time from CAS command in a clock cycle) must be programmed in the
Mode Register at power-up prior to the Read operation.
7.2.7 Read with Auto-precharge Command
(RAS = "H", CAS = ”L”, WE = ”H”, BA0, BA1 = Bank, A10 = ”H”, A0 to A8 = Column Address)
The Read with Auto-precharge command automatically performs the Precharge operation after the
Read operation.
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1) READA≥ tRAS (min) - (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto-precharge command.
2) tRCD(min) ≤ READA < tRAS(min) - (BL/2) x tCK
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
7.2.8 Mode Register Set Command
(RAS = "L", CAS = "L", WE = "L", BA0 = "L", BA1 = "L", A0 to A12 = Register Data)
The Mode Register Set command programs the values of CAS Latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after power-
up are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
7.2.9 Extended Mode Register Set Command
(RAS = "L", CAS = "L", WE = "L", BA0 = "H", BA1 = "L", A0 to A12 = Register data)
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). These additional functions include DLL enable/disable,
output drive strength selection. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
7.2.10 No-Operation Command
(RAS = "H", CAS = "H", WE = "H")
The No-Operation command simply performs no operation (same command as Device Deselect).
7.2.11 Burst Read Stop Command
(RAS = "H", CAS = "H", WE = "L")
The Burst stop command is used to stop the burst operation. This command is only valid during a
Burst Read operation.
7.2.12 Device Deselect Command
(CS = "H")
The Device Deselect command disables the command decoder so that the RAS , CAS ,
WE and Address inputs are ignored. This command is similar to the No-Operation command.
7.2.13 Auto Refresh Command
(RAS = "L", CAS = "L", WE = "H", CKE = "H", BA0, BA1, A0 to A12 = Don’t Care)
AUTO REFRESH is used during normal operation of the DDR SDRAM and is analogous to CAS–
BEFORE–RAS (CBR) refresh in previous DRAM types. This command is non persistent, so it
must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. This makes the address
bits ”Don’t Care” during an AUTO REFRESH command. The DDR SDRAM requires AUTO
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REFRESH cycles at an average periodic interval of tREFI (maximum). To allow for improved
efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight AUTO REFRESH commands can be posted to any given
DDR SDRAM, and the maximum absolute interval between any AUTO REFRESH command and
the next AUTO REFRESH command is 8 * tREFI.
7.2.14 Self Refresh Entry Command
(RAS = "L", CAS = "L", WE = "H", CKE = "L", BA0, BA1, A0 to A12 = Don’t Care)
The SELF REFRESH command can be used to retain data in the DDR SDRAM, even if the rest of
the system is powered down. When in the self refresh mode, the DDR SDRAM retains data
without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command except CKE is disabled (LOW). The DLL is automatically disabled upon entering SELF
REFRESH, and is automatically enabled upon exiting SELF REFRESH. Any time the DLL is
enabled a DLL Reset must follow and 200 clock cycles should occur before a READ command
can be issued. Input signals except CKE are “Don’t Care” during SELF REFRESH. Since CKE is a
SSTL_2 input, VREF must be maintained during SELF REFRESH.
7.2.15 Self Refresh Exit Command
(CKE = "H", CS = "H" or CKE = "H", RAS = "H", CAS = "H")
The procedure for exiting self refresh requires a sequence of commands. First, CLK must be
stable prior to CKE going back HIGH. Once CKE is HIGH, the DDR SDRAM must have NOP
commands issued for tXSNR because time is required for the completion of any internal refresh in
progress. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for
200 clock cycles before applying any other command.
The use of SELF REFREH mode introduces the possibility that an internally timed event can be
missed when CKE is raised for exit from self refresh mode. Upon exit from SELF REFRESH an
extra auto refresh command is recommended.
7.2.16 Data Write Enable /Disable Command
(DM = "L/H" or LDM, UDM = "L/H")
During a Write cycle, the DM or LDM, UDM signal functions as Data Mask and can control every
word of the input data. The LDM signal controls DQ0 to DQ7 and UDM signal controls DQ8 to
DQ15.
7.3 Read Operation
Issuing the Bank Activate command to the idle bank puts it into the active state. When the Read
command is issued after tRCD from the Bank Activate command, the data is read out sequentially,
synchronized with both edges of DQS (Burst Read operation). The initial read data becomes
available after CAS Latency from the issuing of the Read command. The CAS Latency must be set
in the Mode Register at power-up.
When the Precharge Operation is performed on a bank during a Burst Read and operation, the
Burst operation is terminated.
When the Read with Auto-precharge command is issued, the Precharge operation is performed
automatically after the Read cycle then the bank is switched to the idle state. This command
cannot be interrupted by any other commands. Refer to the diagrams for Read operation.
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7.4 Write Operation
Issuing the Write command after tRCD from the bank activate command. The input data is latched
sequentially, synchronizing with both edges(rising & falling) of DQS after the Write command
(Burst write operation). The burst length of the Write data (Burst Length) and Addressing Mode
must be set in the Mode Register at power-up.
When the Precharge operation is performed in a bank during a Burst Write operation, the Burst
operation is terminated.
When the Write with Auto-precharge command is issued, the Precharge operation is performed
automatically after the Write cycle, then the bank is switched to the idle state, The Write with Auto-
precharge command cannot be interrupted by any other command for the entire burst data
duration.
Refer to the diagrams for Write operation.
7.5 Precharge
There are two Commands, which perform the precharge operation (Bank Precharge and
Precharge All). When the Bank Precharge command is issued to the active bank, the bank is
precharged and then switched to the idle state. The Bank Precharge command can precharge one
bank independently of the other bank and hold the unprecharged bank in the active state. The
maximum time each bank can be held in the active state is specified as tRAS (max). Therefore, each
bank must be precharged within tRAS(max) from the bank activate command.
The Precharge All command can be used to precharge all banks simultaneously. Even if banks
are not in the active state, the Precharge All command can still be issued. In this case, the
Precharge operation is performed only for the active bank and the precharge bank is then
switched to the idle state.
7.6 Burst Termination
When the Precharge command is used for a bank in a Burst cycle, the Burst operation is
terminated. When Burst Read cycle is interrupted by the Precharge command, read operation is
disabled after clock cycle of (CAS Latency) from the Precharge command. When the Burst Write
cycle is interrupted by the Precharge command, the input circuit is reset at the same clock cycle at
which the precharge command is issued. In this case, the DM signal must be asserted "high"
during tWR to prevent writing the invalided data to the cell array.
When the Burst Read Stop command is issued for the bank in a Burst Read cycle, the Burst Read
operation is terminated. The Burst read Stop command is not supported during a write burst
operation. Refer to the diagrams for Burst termination.
7.7 Refresh Operation
Two types of Refresh operation can be performed on the device: Auto Refresh and Self Refresh.
By repeating the Auto Refresh cycle, each bank in turn refreshed automatically. The Refresh
operation must be performed 8192 times (rows) within 64mS. The period between the Auto
Refresh command and the next command is specified by tRFC.
Self Refresh mode enters issuing the Self Refresh command (CKE asserted "low") while all banks
are in the idle state. The device is in Self Refresh mode for as long as CKE held "low". In the case
of distributed Auto Refresh commands, distributed auto refresh commands must be issued every
7.8 µS and the last distributed Auto Refresh commands must be performed within 7.8 µS before
entering the self refresh mode. After exiting from the Self Refresh mode, the refresh operation
must be performed within 7.8 µS. In Self Refresh mode, all input/output buffers are disabled,
Publication Release Date: May 26, 2010
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W9425G6JH
resulting in lower power dissipation (except CKE buffer). Refer to the diagrams for Refresh
operation.
7.8 Power Down Mode
Two types of Power Down Mode can be performed on the device: Active Standby Power Down
Mode and Precharge Standby Power Down Mode.
When the device enters the Power Down Mode, all input/output buffers and DLL are disabled
resulting in low power dissipation (except CKE buffer).
Power Down Mode enter asserting CKE "low" while the device is not running a burst cycle. Taking
CKE "high" can exit this mode. When CKE goes high, a No operation command must be input at
next CLK rising edge. Refer to the diagrams for Power Down Mode.
7.9 Input Clock Frequency Change during Precharge Power Down Mode
DDR SDRAM input clock frequency can be changed under following condition:
DDR SDRAM must be in precharged power down mode with CKE at logic LOW level. After a
minimum of 2 clocks after CKE goes LOW, the clock frequency may change to any frequency
between minimum and maximum operating frequency specified for the particular speed grade.
During an input clock frequency change, CKE must be held LOW. Once the input clock frequency
is changed, a stable clock must be provided to DRAM before precharge power down mode may be
exited. The DLL must be RESET via EMRS after precharge power down exit. An additional MRS
command may need to be issued to appropriately set CL etc. After the DLL relock time, the DRAM
is ready to operate with new clock frequency.
7.10 Mode Register Operation
The mode register is programmed by the Mode Register Set command (MRS/EMRS) when all
banks are in the idle state. The data to be set in the Mode Register is transferred using the A0 to
A12 and BA0, BA1 address inputs.
The Mode Register designates the operation mode for the read or write cycle. The register is
divided into five filed: (1) Burst Length field to set the length of burst data (2) Addressing Mode
selected bit to designate the column access sequence in a Burst cycle (3) CAS Latency field to set
the assess time in clock cycle (4) DLL reset field to reset the DLL (5) Regular/Extended Mode
Register filed to select a type of MRS (Regular/Extended MRS). EMRS cycle can be implemented
the extended function (DLL enable/Disable mode).
The initial value of the Mode Register (including EMRS) after power up is undefined; therefore the
Mode Register Set command must be issued before power operation.
7.10.1 Burst Length field (A2 to A0)
This field specifies the data length for column access using the A2 to A0 pins and sets the Burst
Length to be 2, 4, and 8 words.
A2
0
A1
0
A0
0
BURST LENGTH
Reserved
2 words
0
0
1
0
1
0
4 words
0
1
1
8 words
1
x
x
Reserved
Publication Release Date: May 26, 2010
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7.10.2 Addressing Mode Select (A3)
The Addressing Mode can be one of two modes; Interleave mode or Sequential Mode, When the
A3 bit is "0", Sequential mode is selected. When the A3 bit is "1", Interleave mode is selected. Both
addressing Mode support burst length 2, 4, and 8 words.
A3
0
ADDRESSING MODE
Sequential
1
Interleave
7.10.2.1. Addressing Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
ACCESS ADDRESS
BURST LENGTH
n
2 words (address bits is A0)
not carried from A0 to A1
4 words (address bit A0, A1)
Not carried from A1 to A2
n + 1
n + 2
n + 3
n + 4
n + 5
n + 6
n + 7
8 words (address bits A2, A1 and A0)
Not carried from A2 to A3
7.10.2.2. Addressing Sequence for Interleave Mode
A Column access is started from the inputted column address and is performed by interleaving the
address bits in the sequence shown as the following.
Addressing Sequence of Interleave Mode
DATA
Data 0
Data 1
ACCESS ADDRESS
BURST LENGTH
A8 A7 A6 A5 A4 A3 A2 A1 A0
2 words
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
4 words
8 words
Publication Release Date: May 26, 2010
Revision A01
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7.10.3 CAS Latency field (A6 to A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first
data read. The minimum values of CAS Latency depend on the frequency of CLK.
A6
0
A5
0
A4
0
CAS LATENCY
Reserved
Reserved
2
0
0
1
0
1
0
0
1
1
3
1
0
0
Reserved
Reserved
2.5
1
0
1
1
1
0
1
1
1
Reserved
7.10.4 DLL Reset bit (A8)
This bit is used to reset DLL. When the A8 bit is "1", DLL is reset.
7.10.5 Mode Register /Extended Mode register change bits (BA0, BA1)
These bits are used to select MRS/EMRS.
BA1
BA0
A12-A0
0
0
1
0
1
x
Regular MRS Cycle
Extended MRS Cycle
Reserved
7.10.6 Extended Mode Register field
1) DLL Switch field (A0)
This bit is used to select DLL enable or disable
A0
0
DLL
Enable
Disable
1
2) Output Driver Size Control field (A6, A1)
The 100%, 60% and 30% or matched impedance driver strength are required Extended Mode
Register Set (EMRS) as the following:
A6
0
A1
0
BUFFER STRENGTH
100% Strength
60% Strength
Reserved
0
1
1
0
1
1
30% Strength
7.10.7 Reserved field
•
Test mode entry bit (A7)
This bit is used to enter Test mode and must be set to "0" for normal operation.
•
Reserved bits (A9, A10, A11, A12)
These bits are reserved for future operations. They must be set to "0" for normal operation.
Publication Release Date: May 26, 2010
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8. OPERATION MODE
The following table shows the operation commands.
8.1 Simplified Truth Table
A12,
A11,
A9-A0
DEVICE
STATE
BA0,
BA1
SYM.
COMMAND
CKEn-1 CKEn DM(4)
A10
CS RAS
CAS
WE
ACT
Bank Active
Idle(3)
Any(3)
Any
H
H
H
H
X
X
X
X
X
X
X
X
V
V
X
V
V
L
V
X
X
V
L
L
L
L
L
L
H
H
H
L
H
L
L
L
PRE
Bank Precharge
Precharge All
Write
PREA
WRIT
H
L
L
Active(3)
H
Write with Auto-
precharge
WRITA
READ
READA
MRS
Active(3)
Active(3)
Active(3)
Idle
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
V
V
H
L
V
V
V
C
V
L
L
L
L
L
H
H
H
L
L
L
L
L
L
L
H
H
L
Read
Read with Auto-
precharge
V
H
C
V
Mode Register Set
L, L
H, L
Extended Mode
Register Set
EMRS
Idle
L
L
NOP
BST
No Operation
Burst Read Stop
Device Deselect
Auto Refresh
Any
Active
Any
H
H
H
H
H
X
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
X
L
H
H
X
L
H
L
DSL
H
L
X
H
H
X
X
X
X
X
X
X
X
AREF
SELF
Idle
Self Refresh Entry
Idle
L
L
L
H
L
X
H
X
H
X
H
X
X
X
H
X
H
X
H
X
X
Idle (Self
Refresh)
SELEX
PD
Self Refresh Exit
L
H
L
H
L
X
X
X
X
X
X
X
X
X
X
X
X
H
L
Power Down
Mode Entry
Idle/
Active(5)
H
L
Power Down
Mode Exit
Any (Power
Down)
PDEX
H
WDE
WDD
Data Write Enable
Data Write Disable
Active
Active
H
H
X
X
L
X
X
X
X
X
X
X
X
H
Notes:
1. V = Valid X = Don’t Care L = Low level H = High level
2. CKEn signal is input level when commands are issued.
CKEn-1 signal is input level one clock cycle before the commands are issued.
3. These are state designated by the BA0, BA1 signals.
4. LDM, UDM (W9425G6JH).
5. Power Down Mode can not entry in the burst cycle.
Publication Release Date: May 26, 2010
Revision A01
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8.2 Function Truth Table
(Note 1)
CURRENT
STATE
ADDRESS
COMMAND
ACTION
NOTES
CS RAS CAS
WE
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
X
H
H
H
L
X
H
L
X
X
H
L
X
DSL
NOP/BST
NOP
NOP
X
BA, CA, A10
READ/READA ILLEGAL
3
3
L
BA, CA, A10
WRIT/WRITA
ACT
ILLEGAL
Idle
H
H
L
H
L
BA, RA
Row activating
NOP
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
L
H
L
X
Refresh or Self refresh
Mode register accessing
NOP
2
2
L
L
Op-Code
X
H
H
H
L
X
H
L
X
X
H
L
X
X
NOP/BST
NOP
BA, CA, A10
READ/READA Begin read: Determine AP
4
4
3
5
L
BA, CA, A10
WRIT/WRITA
ACT
Begin write: Determine AP
ILLEGAL
Row Active
H
H
L
H
L
BA, RA
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
Precharge
L
H
L
X
ILLEGAL
L
L
Op-Code
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
Continue burst to end
Continue burst to end
Burst stop
X
NOP
X
BST
H
L
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
READ/READA Term burst, new read: Determine AP
6
3
Read
L
WRIT/WRITA
ACT
ILLEGAL
H
H
L
H
L
ILLEGAL
L
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
Term burst, precharging
ILLEGAL
L
H
L
L
L
Op-Code
X
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
Continue burst to end
Continue burst to end
ILLEGAL
X
NOP
X
BST
H
L
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
READ/READA Term burst, start read: Determine AP
6, 7
6
Write
L
WRIT/WRITA
ACT
Term burst, start read: Determine AP
ILLEGAL
H
H
L
H
L
3
L
PRE/PREA
AREF/SELF
MRS/EMRS
Term burst, precharging
ILLEGAL
8
L
H
L
L
L
Op-Code
ILLEGAL
Publication Release Date: May 26, 2010
Revision A01
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Function Truth Table, continued
CURRENT
STATE
ADDRESS
COMMAND
DSL
ACTION
NOTES
CS
RAS
CAS
WE
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
X
H
H
H
H
L
X
H
H
L
X
H
L
X
Continue burst to end
Continue burst to end
ILLEGAL
X
X
NOP
BST
H
L
BA, CA, A10 READ/READA
BA, CA, A10 WRIT/WRITA
ILLEGAL
Read with
Auto-
precharge
L
ILLEGAL
3
3
H
H
L
H
L
BA, RA
ACT
ILLEGAL
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
ILLEGAL
L
H
L
X
ILLEGAL
L
L
Op-Code
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
Continue burst to end
Continue burst to end
ILLEGAL
NOP
BST
H
L
BA, CA, A10 READ/READA
BA, CA, A10 WRIT/WRITA
ILLEGAL
Write with
Auto-
precharge
L
ILLEGAL
H
H
L
H
L
BA, RA
ACT
ILLEGAL
3
3
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
ILLEGAL
L
H
L
X
ILLEGAL
L
L
Op-Code
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
NOP-> Idle after tRP
NOP-> Idle after tRP
ILLEGAL
NOP
BST
H
L
BA, CA, A10 READ/READA
BA, CA, A10 WRIT/WRITA
ILLEGAL
3
3
3
Precharging
L
ILLEGAL
H
H
L
H
L
BA, RA
ACT
ILLEGAL
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
Idle after tRP
ILLEGAL
L
H
L
X
L
L
Op-Code
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
NOP-> Row active after tRCD
NOP-> Row active after tRCD
ILLEGAL
NOP
BST
H
L
BA, CA, A10 READ/READA
BA, CA, A10 WRIT/WRITA
ILLEGAL
3
3
3
3
Row
Activating
L
ILLEGAL
H
H
L
H
L
BA, RA
BA, A10
X
ACT
ILLEGAL
L
PRE/PREA
AREF/SELF
MRS/EMRS
ILLEGAL
L
H
L
ILLEGAL
L
L
Op-Code
ILLEGAL
Publication Release Date: May 26, 2010
Revision A01
- 19 -
W9425G6JH
Function Truth Table, continued
CURRENT
ADDRESS
COMMAND
ACTION
NOTES
CS RAS CAS
STATE
WE
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
X
H
H
H
H
L
X
H
H
L
X
H
L
X
DSL
NOP
BST
NOP->Row active after tWR
NOP->Row active after tWR
ILLEGAL
X
X
H
L
BA, CA, A10
READ/READA
WRIT/WRITA
ACT
ILLEGAL
3
3
3
3
Write
L
BA, CA, A10
ILLEGAL
Recovering
H
H
L
H
L
BA, RA
ILLEGAL
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
ILLEGAL
L
H
L
X
ILLEGAL
L
L
Op-Code
ILLEGAL
X
H
H
H
H
L
X
H
H
L
X
H
L
X
NOP->Enter precharge after tWR
NOP->Enter precharge after tWR
ILLEGAL
X
NOP
X
BST
Write
H
L
BA, CA, A10
READ/READA
WRIT/WRITA
ACT
ILLEGAL
3
3
3
3
Recovering
with Auto-
precharge
L
BA, CA, A10
ILLEGAL
H
H
L
H
L
BA, RA
ILLEGAL
L
BA, A10
PRE/PREA
AREF/SELF
MRS/EMRS
DSL
ILLEGAL
L
H
L
X
ILLEGAL
L
L
Op-Code
ILLEGAL
X
H
H
H
L
X
H
H
L
X
H
L
X
X
X
X
X
X
X
X
X
X
NOP->Idle after tRC
NOP->Idle after tRC
ILLEGAL
NOP
BST
Refreshing
H
X
X
X
H
L
READ/WRIT
ACT/PRE/PREA
ILLEGAL
H
L
ILLEGAL
L
AREF/SELF/MRS/EMRS ILLEGAL
X
H
H
H
X
H
H
L
DSL
NOP->Row after tMRD
NOP
NOP->Row after tMRD
ILLEGAL
Mode
Register
Accessing
BST
X
READ/WRIT
ILLEGAL
ACT/PRE/PREA/ARE
F/SELF/MRS/EMRS
L
L
X
X
X
ILLEGAL
Notes:
1. All entries assume that CKE was active (High level) during the preceding clock cycle and the current clock cycle.
2. Illegal if any bank is not idle.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
4. Illegal if tRCD is not satisfied.
5. Illegal if tRAS is not satisfied.
6. Must satisfy burst interrupt condition.
7. Must avoid bus contention, bus turn around, and/or satisfy write recovery requirements.
8. Must mask preceding data which don’t satisfy tWR
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
Publication Release Date: May 26, 2010
- 20 -
Revision A01
W9425G6JH
8.3 Function Truth Table for CKE
CKE
n-1
CURRENT
STATE
ADDRESS
ACTION
NOTES
CS RAS CAS
WE
n
X
H
H
H
H
L
H
L
X
H
L
X
X
H
H
L
X
X
H
L
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
INVALID
Exit Self Refresh->Idle after tXSNR
Exit Self Refresh->Idle after tXSNR
ILLEGAL
L
Self Refresh
Power Down
L
L
L
L
X
X
X
X
X
X
X
H
L
ILLEGAL
L
X
X
X
X
X
H
L
X
X
X
X
X
X
H
L
Maintain Self Refresh
INVALID
H
L
X
H
L
Exit Power down->Idle after tIS
Maintain power down mode
Refer to Function Truth Table
Enter Power down
Enter Power down
Self Refresh
L
H
H
H
H
H
H
L
H
L
2
2
1
L
All banks Idle
L
L
L
L
H
L
L
ILLEGAL
L
L
X
X
X
X
H
L
ILLEGAL
X
H
L
X
X
H
L
X
X
X
H
L
Power down
H
H
H
H
H
H
L
Refer to Function Truth Table
Enter Power down
Enter Power down
ILLEGAL
3
3
L
Row Active
L
L
L
L
H
L
L
ILLEGAL
L
L
X
X
ILLEGAL
X
X
X
Power down
Any State
Other Than
Listed Above
H
H
X
X
X
X
X
Refer to Function Truth Table
Notes:
1. Self refresh can enter only from the all banks idle state.
2. Power Down occurs when all banks are idle; this mode is referred to as precharge power down.
3. Power Down occurs when there is a row active in any bank; this mode is referred to as active power down.
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
Publication Release Date: May 26, 2010
Revision A01
- 21 -
W9425G6JH
8.4 Simplified Stated Diagram
SELF
REFRESH
SREF
SREFX
AREF
MRS/EMRS
MODE
REGISTER
SET
AUTO
REFRESH
IDLE
PD
PDEX
ACT
POWER
DOWN
ACTIVE
POWERDOWN
PDEX
PD
ROW
ACTIVE
BST
Read
Read
Write
Write
Read
Write
Read
Read A
Write A
Read A
Write A
Read A
PRE
Write A
Read A
PRE
PRE
POWER
APPLIED
POWER
ON
PRE
CHARGE
PRE
Automatic Sequence
Command Sequence
Publication Release Date: May 26, 2010
Revision A01
- 22 -
W9425G6JH
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
Input/Output Voltage
SYMBOL
RATING
UNIT
VIN, VOUT
VDD, VDDQ
TOPR
-0.5 ~ VDDQ + 0.5
V
V
Power Supply Voltage
-1 ~ 3.6
0 ~ 70
-40 ~ 85
-55 ~ 150
260
Operating Temperature (-4/-5)
Operating Temperature (-5I)
Storage Temperature
°C
°C
°C
°C
W
TOPR
TSTG
Soldering Temperature (10s)
Power Dissipation
TSOLDER
PD
1
Short Circuit Output Current
IOUT
50
mA
Note: Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -4/-5, TA = -40 to 85°C for -5I)
SYM.
VDD
PARAMETER
Power Supply Voltage (for -5/-5I)
Power Supply Voltage (for -4)
I/O Buffer Supply Voltage (for -5/-5I)
MIN.
2.3
TYP.
MAX.
2.7
UNIT NOTES
2.5
-
V
V
V
V
2
2
2
2
VDD
2.4
2.7
VDDQ
2.3
2.5
-
2.7
VDDQ
2.4
2.7
I/O Buffer Supply Voltage (for -4)
Input reference Voltage
VREF
VTT
0.49 x VDDQ
VREF - 0.04
VREF + 0.15
-0.3
0.50 x VDDQ
0.51 x VDDQ
VREF + 0.04
VDDQ + 0.3
VREF - 0.15
VDDQ + 0.3
V
V
V
V
V
2, 3
2, 8
2
Termination Voltage (System)
Input High Voltage (DC)
VREF
VIH (DC)
VIL (DC)
VICK (DC)
-
-
-
Input Low Voltage (DC)
2
Differential Clock DC Input Voltage
Input Differential Voltage.
CLK and CLK inputs (DC)
-0.3
15
VID (DC)
0.36
-
VDDQ + 0.6
V
13, 15
VIH (AC)
VIL (AC)
Input High Voltage (AC)
Input Low Voltage (AC)
Input Differential Voltage.
CLK and CLK inputs (AC)
VREF + 0.31
-
-
-
-
V
V
2
2
VREF - 0.31
VID (AC)
0.7
-
VDDQ + 0.6
V
13, 15
VX (AC)
Differential AC input Cross Point Voltage
Differential Clock AC Middle Point
VDDQ/2 - 0.2
VDDQ/2 - 0.2
-
-
VDDQ/2 + 0.2
VDDQ/2 + 0.2
V
V
12, 15
14, 15
VISO (AC)
Notes: Undershoot Limit: VIL (min) = -1.5V with a pulse width < 5 nS
Overshoot Limit: VIH (max) = VDDQ +1.5V with a pulse width < 5 nS
VIH (DC) and VIL (DC) are levels to maintain the current logic state.
VIH (AC) and VIL (AC) are levels to change to the new logic state.
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9.3 Capacitance
(VDD = VDDQ = 2.5V ±0.2V, f = 1 MHz, TA = 25 °C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V)
DELTA
UNIT
SYMBOL
PARAMETER
MIN.
MAX.
(MAX.)
CIN
CCLK
CI/O
Input Capacitance (except for CLK pins)
Input Capacitance (CLK pins)
DQ, DQS, DM Capacitance
2.0
2.0
4.0
3.0
3.0
5.0
0.5
0.25
0.5
pF
pF
pF
Note: These parameters are periodically sampled and not 100% tested.
9.4 Leakage and Output Buffer Characteristics
SYMBOL
PARAMETER
UNIT
MIN.
MAX.
NOTES
Input Leakage Current
II (L)
-2
2
µA
Any input 0V < VIN < VDD, VREF Pin 0V < VIN <
1.35V (All other pins not under test = 0V)
Output Leakage Current
IO (L)
VOH
VOL
-5
5
µA
V
(Output disabled, 0V < VOUT < VDDQ)
Output High Voltage
VTT +0.76
-
-
(under AC test load condition)
Output Low Voltage
VTT -0.76
V
(under AC test load condition)
Output Levels: Full drive option
High Current
IOH
IOL
-15
15
-
-
mA
mA
4, 6
4, 6
(VOUT = VDDQ - 0.373V, min. VREF, min. VTT
Low Current
(VOUT = 0.373V, max. VREF, max. VTT)
Output Levels: Reduced drive option - 60%
High Current
IOHR
-9
-
mA
5
(VOUT = VDDQ - 0.763V, min. VREF, min. VTT
Low Current
IOLR
9
-
-
-
mA
mA
mA
5
5
5
(VOUT = 0.763V, max. VREF, max. VTT)
Output Levels: Reduced drive option - 30%
High Current
IOHR(30)
IOLR(30)
-4.5
4.5
(VOUT = VDDQ – 1.056V, min. VREF, min. VTT
Low Current
(VOUT = 1.056V, max. VREF, max. VTT)
Publication Release Date: May 26, 2010
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9.5 DC Characteristics
MAX.
SYM.
PARAMETER
UNIT NOTES
-4
-5/-5I
Operating current: One Bank Active-Precharge;
tRC = tRC min; tCK = tCK min;
DQ, DM and DQS inputs changing once per clock cycle;
Address and control inputs changing once every two clock cycles
IDD0
75
65
7
Operating current: One Bank Active-Read-Precharge;
Burst = 4; tRC = tRC min; CL = 3; tCK = tCK min; IOUT = 0 mA; Address
and control inputs changing once per clock cycle.
Precharge Power Down standby current:
All Banks Idle; Power down mode;
IDD1
90
5
80
5
7, 9
IDD2P
CKE < VIL max; tCK = tCK min; Vin = VREF for DQ, DQS and DM
Idle standby current:
CS > VIH min; All Banks Idle; CKE > VIH min; tCK = tCK min;
Address and other control inputs changing once per clock cycle;
Vin > VIH min or Vin < VIL max for DQ, DQS and DM
Precharge floating standby current:
IDD2N
IDD2F
25
25
20
20
7
CS > VIH min; all banks idle; CKE > VIH min;
Address and other control inputs changing once per clock cycle;
VIN = VREF for DQ, DQS and DM.
Precharge quiet standby current:
CS > VIH min; all banks idle; CKE > VIH min;
Address and other control inputs stable at > VIH min or < VIL max;
Vin = VREF for DQ, DQS and DM.
Active Power Down standby current:
One Bank Active; Power down mode;
CKE < VIL max; tCK = tCK min;
IDD2Q
IDD3P
20
20
20
20
mA
Vin = VREF for DQ, DQS and DM
Active standby current:
CS > VIH min; CKE > VIH min; One Bank Active-Precharge;
tRC = tRAS max; tCK = tCK min;
IDD3N
35
30
7
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
Operating current:
Burst = 2; Reads; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL=2; tCK = tCK min; IOUT = 0mA
IDD4R
IDD4W
140
135
120
115
7, 9
Operating current:
Burst = 2; Write; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL = 2; tCK = tCK min;
DQ, DM and DQS inputs changing twice per clock cycle
Auto Refresh current: tRC = tRFC min
7
7
IDD5
IDD6
70
2
65
2
Self Refresh current: CKE < 0.2V; external clock on; tCK = tCK min
Random Read current: 4 Banks Active Read with activate every
20nS, Auto-Precharge Read every 20 nS;
Burst = 4; tRCD = 3; IOUT = 0mA;
IDD7
210
175
DQ, DM and DQS inputs changing twice per clock cycle;
Address changing once per clock cycle
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9.6 AC Characteristics and Operating Condition
-4
-5/-5I
MAX.
SYM.
PARAMETER
UNIT
NOTES
MIN.
52
60
36
16
16
1
MAX.
MIN.
55
70
40
15
15
1
15
10
15
tRC
tRFC
tRAS
tRCD
tRAP
tCCD
tRP
Active to Ref/Active Command Period
Ref to Ref/Active Command Period
Active to Precharge Command Period
Active to Read/Write Command Delay Time
Active to Read with Auto-precharge Enable
Read/Write(a) to Read/Write(b) Command Period
Precharge to Active Command Period
Active(a) to Active(b) Command Period
Write Recovery Time
nS
70000
100000
tCK
nS
16
8
15
tRRD
tWR
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
tDAL
Auto-precharge Write Recovery + Precharge Time
CL = 2
tCK
18
-
-
4
4
-
-
10
10
7.5
6
5
12
12
12
-
CL = 2.5
tCK
CLK Cycle Time
CL = 3
CL = 4
-
nS
tAC
-0.7
-0.6
0.7
0.6
-0.7
-0.6
0.7
0.6
16
16
Data Access Time from CLK, CLK
tDQSCK
DQS Output Access Time from CLK, CLK
tDQSQ
tCH
Data Strobe Edge to Output Data Edge Skew
CLk High Level Width
CLK Low Level Width
0.4
0.55
0.55
0.4
0.55
0.55
0.45
0.45
min
(tCL,tCH)
tHP-0.5
0.9
0.45
0.45
Min,
(tCL,tCH)
tHP-0.5
0.9
tCK
nS
tCK
nS
11
tCL
tHP
CLK Half Period (minimum of actual tCH, tCL)
tQH
tRPRE
tRPST
tDS
DQ Output Data Hold Time from DQS
DQS Read Preamble Time
DQS Read Postamble Time
DQ and DM Setup Time to DQS, slew rate 0.5V/nS
DQ and DM Hold Time to DQS, slew rate 0.5V/nS
DQ and DM Input Pulse Width (for each input)
DQS Input High Pulse Width
DQS Input Low Pulse Width
DQS Falling Edge to CLK Setup Time
DQS Falling Edge Hold Time from CLK
1.1
0.6
1.1
0.6
11
0.4
0.4
0.4
1.75
0.35
0.35
0.2
0.2
0
0.25
0.4
0.85
0.6
0.6
0.7
0.4
0.4
0.4
1.75
0.35
0.35
0.2
0.2
0
0.25
0.4
0.72
0.6
0.6
0.7
tDH
tDIPW
tDQSH
tDQSL
tDSS
tDSH
tCK
11
11
tWPRES Clock to DQS Write Preamble Set-up Time
nS
tCK
tWPRE
tWPST
tDQSS
tIS
DQS Write Preamble Time
DQS Write Postamble Time
0.6
1.15
0.6
1.25
Write Command to First DQS Latching Transition
Input Setup Time (fast slew rate)
Input Hold Time (fast slew rate)
Input Setup Time (slow slew rate)
Input Hold Time (slow slew rate)
19, 21-23
19, 21-23
20-23
tIH
tIS
tIH
0.7
0.7
20-23
nS
tIPW
Control & Address Input Pulse Width (for each input)
2.2
2.2
tHZ
tLZ
0.7
0.7
Data-out High-impedance Time from CLK, CLK
-0.7
0.7
1.5
-0.7
0.7
1.5
Data-out Low-impedance Time from CLK, CLK
tT(SS)
tWTR
tXSNR
tXSRD
tREFI
tMRD
SSTL Input Transition
0.5
2
72
200
0.5
2
75
200
Internal Write to Read Command Delay
Exit Self Refresh to non-Read Command
Exit Self Refresh to Read Command
Refresh Interval Time (4K/ 64mS)
Mode Register Set Cycle Time
tCK
nS
tCK
µS
nS
7.8
7.8
17
8
10
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9.7 AC Test Conditions
PARAMETER
SYMBOL
VIH
VALUE
UNIT
V
Input High Voltage (AC)
VREF + 0.31
VREF - 0.31
0.5 x VDDQ
0.5 x VDDQ
Vx (AC)
Input Low Voltage (AC)
VIL
V
Input Reference Voltage
Termination Voltage
VREF
VTT
V
V
Differential Clock Input Reference Voltage
VR
V
VID (AC)
1.5
V
V
Input Difference Voltage. CLK and CLK Inputs (AC)
Output Timing Measurement Reference Voltage
VOTR
0.5 x VDDQ
VDDQ
VTT
V
V
V
IHmin (AC)
V
SWING (MAX)
REF
50 Ω
IL max (AC)
VSS
Output
T
T
Output
V(out)
30pF
SLEW = (VIHmin (AC) - VILmax (AC)) /
T
Timing Reference Load
Notes:
(1) Conditions outside the limits listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
(2)
(3)
(4)
(5)
(6)
All voltages are referenced to VSS, VSSQ.
Peak to peak AC noise on VREF may not exceed ±2% VREF(DC).
VOH = 1.95V, VOL = 0.35V
VOH = 1.9V, VOL = 0.4V
The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.
(7)
(8)
(9)
These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values
of tCK and tRC.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set
equal to VREF and must track variations in the DC level of VREF.
These parameters depend on the output loading. Specified values are obtained with the output open.
(10) Transition times are measured between VIH min(AC) and VIL max(AC).Transition (rise and fall) of input signals have a fixed
slope.
(11) IF the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to
the nearest decimal place.
(i.e., tDQSS = 1.25 × tCK, tCK = 5 nS, 1.25 × 5 nS = 6.25 nS is rounded up to 6.2 nS.)
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(12) VX is the differential clock cross point voltage where input timing measurement is referenced.
(13) VID is magnitude of the difference between CLK input level and CLK input level.
(14) VISO means {VICK(CLK)+VICK( CLK )}/2.
(15) Refer to the figure below.
CLK
VX
VX
V
ICK
VICK
V
X
VX
VX
V
ID(AC)
CLK
V
ICK
VICK
V
SS
V
ID(AC)
0 V Differential
V
ISO
V
ISO(min)
VISO(max)
V
SS
(16) tAC and tDQSCK depend on the clock jitter. These timing are measured at stable clock.
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For -5 speed grade at CL=2.5 and tCK=6 nS
tDAL = ((15 nS / 6 nS) + (15 nS / 6 nS)) clocks = ((3) + (3)) clocks = 6 clocks
(19) For command/address input slew rate ≥1.0 V/nS.
(20) For command/address input slew rate ≥0.5 V/nS and <1.0 V/nS.
(21) For CLK & CLK slew rate ≥1.0 V/nS (single--ended).
(22) These parameters guarantee device timing, but they are not necessarily tested on each device. They may be
guaranteed by device design or tester correlation.
(23) Slew Rate is measured between VOH(ac) and VOL(ac).
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10. SYSTEM CHARACTERISTICS FOR DDR SDRAM
The following specification parameters are required in systems using DDR500, DDR400 & DDR333
devices to ensure proper system performance. These characteristics are for system simulation
purposes and are guaranteed by design.
10.1 Table 1: Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
PARAMETER
SYM.
DDR500
DDR400
UNIT NOTES
MIN. MAX. MIN. MAX.
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
0.5
4.0
V/nS
a, m
10.2 Table 2: Input Setup & Hold Time Derating for Slew Rate
INPUT SLEW RATE
0.5 V/nS
ΔtIS
0
ΔtIH
0
UNIT
pS
NOTES
i
i
i
0.4 V/nS
+50
+100
0
pS
0.3 V/nS
0
pS
10.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate
INPUT SLEW RATE
0.5 V/nS
ΔtDS
0
ΔtDH
UNIT
pS
NOTES
0
0
0
k
k
k
0.4 V/nS
+75
+150
pS
0.3 V/nS
pS
10.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
INPUT SLEW RATE
±0.0 nS/V
ΔtDS
0
ΔtDH
UNIT
pS
NOTES
0
0
0
j
j
j
+50
+100
pS
±0.25 nS/V
pS
±0.5 nS/V
10.5 Table 5: Output Slew Rate Characteristics (X16 Devices only)
SLEW RATE
CHARACTERISTIC
TYPICAL
RANGE (V/NS)
MINIMUM
(V/NS)
MAXIMUM
(V/NS)
NOTES
Pullup Slew Rate
1.2 ~ 2.5
1.2 ~ 2.5
0.7
0.7
5.0
5.0
a, c, d, f, g, h
b, c, d, f, g, h
Pulldown Slew Rate
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10.6 Table 6: Output Slew Rate Matching Ratio Characteristics
SLEW RATE CHARACTERISTIC
PARAMETER
DDR500
DDR400
NOTES
MIN.
0.67
MAX.
MIN.
MAX.
Output Slew Rate Matching Ratio (Pullup to Pulldown)
1.5
0.67
1.5
e, m
10.7 Table 7: AC Overshoot/Undershoot Specification for Address and Control Pins
SPECIFICATION
PARAMETER
DDR500
DDR400
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
1.5 V
1.5 V
1.5 V
1.5 V
The area between the overshoot signal and VDD must be less than
or equal to Max. area in Figure 3
3.0 V-nS
3.0 V-nS
3.0 V-nS
3.0 V-nS
The area between the undershoot signal and GND must be less than
or equal to Max. area in Figure 3
VDD
Overshoot
5
Max. amplitude = 1.5V
4
3
2
Max. area
1
0
-1
-2
Max. amplitude = 1.5V
-3
GND
-4
-5
0
0.5 0.68751.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.06.3125 6.5 7.0
Time (nS)
Undershoot
Figure 3: Address and Control AC Overshoot and Undershoot Definition
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10.8 Table 8: Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
SPECIFICATION
PARAMETER
DDR500
DDR400
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
1.2 V
1.2 V
1.2 V
1.2 V
The area between the overshoot signal and VDD must be less than
or equal to Max. area in Figure 4
1.44 V-nS
1.44 V-nS
1.44 V-nS
1.44 V-nS
The area between the undershoot signal and GND must be less than
or equal to Max. area in Figure 4
VDD
Overshoot
5
Max. amplitude = 1.2V
4
3
2
Max. area
1
0
-1
-2
Max. amplitude = 1.2V
-3
GND
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Time (nS)
Undershoot
Figure 4: DQ/DM/DQS AC Overshoot and Undershoot Definition
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10.9 System Notes:
a. Pullup slew rate is characterized under the test conditions as shown in Figure 1.
Test point
Output
50 Ω
VSSQ
Figure 1: Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
VDDQ
50 Ω
Output
Test point
Figure 2: Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV ± 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV ± 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs
switching and only one output switching.
Example: For typical slew rate, DQ0 is switching
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high
The remaining DQ bits remain the same as for previous state
d. Evaluation conditions
Typical:
25 oC (T Ambient), VDDQ = nominal, typical process
Minimum: 70 oC (T Ambient), VDDQ = minimum, slow-slow process
Maximum: 0 oC (T Ambient), VDDQ = maximum, fast-fast process
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e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and
voltage, over the entire temperature and voltage range. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOP II package devices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below
0.5 V/nS as shown in Table 2. The Input slew rate is based on the lesser of the slew rates
determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew
rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise,
fall rate and DC-DC delta rise, fall rate. Input slew rate is based on the lesser of the slew rates
determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)}-{1/(slew Rate2)}
For example: If Slew Rate 1 is 0.5 V/nS and Slew Rate 2 is 0.4 V/nS, then the delta rise, fall rate is
-0.5 nS/V. Using the table given, this would result in the need for an increase in tDS and tDH of 100
pS.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/nS. The
I/O slew rate is based on the lesser of the AC-AC slew rate and the DC-DC slew rate. The input
slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC)
to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve
setup and hold times. Signal transitions through the DC region must be monotonic.
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11. TIMING WAVEFORMS
11.1 Command Input Timing
11.2 Timing of the CLK Signals
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11.3 Read Timing (Burst Length = 4)
tCH
tCL
tCK
CLK
CLK
tIS
tIH
CMD
READ
tIS
tIH
ADD
Col
tDQSCK
tDQSCK
tRPST
tDQSCK
CAS Latency = 2
DQS
tRPRE
Hi-Z
Hi-Z
Hi-Z
tQH
Preamble
Postamble
tDQSQ
tDQSQ
tQH
tDQSQ
Hi-Z
Hi-Z
Hi-Z
Output
(Data)
QA0
QA1
QA2
QA3
tAC
tLZ
tHZ
tDQSCK
tDQSCK
tRPST
tDQSCK
tRPRE
CAS Latency = 3
DQS
Hi-Z
Hi-Z
tQH
Preamble
Postamble
tDQSQ
tDQSQ
tQH
tDQSQ
Output
(Data)
QA0
QA1
QA2
QA3
tAC
tLZ
tHZ
Notes: The correspondence of LDQS, UDQS to DQ. (W9425G6JH)
LDQS
UDQS
DQ0~7
DQ8~15
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Revision A01
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W9425G6JH
11.4 Write Timing (Burst Length = 4)
tCK
tCL
tCH
CLK
CLK
tIH
tIS
WRIT
CMD
tIH
tIS
tDSS
tDSH
tDSS
tDSH
tDQSH
tDH
Col
ADD
x4, x8 device
DQS
tWPRES
tWPST
tDQSL
tDQSH
tWPRE
Preamble
tDS
Postamble
tDH
tDS
tDS
tDH
Input
(Data)
DA2
DA3
DA0
DA1
tDSS
tDSH
tDQSH
tDSS
tDQSL
tDSH
tDQSS
x16 device
LDQS
tWPST
tDQSH
tWPRES
tWPRE
Postamble
tDH
Preamble
tDS
tDS
tDS
tDH
tDH
DA1
DA2
DA3
DA0
DQ0~7
tDQSS
tDSH
tDSS
tWPST
tDSH
tDQSH
tDSS
tDQSL
tDQSH
tWPRES
tWPRE
UDQS
Postamble
tDH
Preamble
tDS
tDS
tDS
tDH
tDH
DA0
DA1
DA2
DA3
DQ8~15
tDQSS
Note: x16 has two DQSs (UDQS for upper byte and LDQS for lower byte). Even if one of the 2 bytes is not used, both UDQS
and LDQS must be toggled.
Publication Release Date: May 26, 2010
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Revision A01
W9425G6JH
11.5 DM, DATA MASK (W9425G6JH)
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.6 Mode Register Set (MRS) Timing
CLK
CLK
tMRD
CMD
ADD
MRS
NEXT CMD
Register Set data
Burst Length
A0
A1
A2
A2
0
A1
0
A0
0
Sequential
Interleaved
Burst Length
Addressing Mode
CAS Latency
Reserved
Reserved
0
0
1
2
4
8
2
4
8
0
1
0
0
1
1
A3
A4
1
0
0
1
0
1
Reserved
Reserved
1
1
0
A5
A6
A7
A8
1
1
1
Addressing Mode
A3
0
Sequential
Interleaved
Reserved
"0"
1
DLL Reset
CAS Latency
Reserved
A6
0
A5
0
A4
0
"0"
"0"
"0"
"0"
"0"
"0"
A9
0
0
1
A10
A11
A12
BA0
BA1
2
3
0
1
0
Reserved
0
1
1
1
0
0
4
Reserved
2.5
1
0
1
1
1
0
Mode Register Set
or
Extended Mode
Register Set
Reserved
1
1
1
DLL Reset
No
A8
0
Yes
1
* "Reserved" should stay "0" during MRS cycle.
MRS or EMRS
Regular MRS cycle
Extended MRS cycle
BA1
BA0
0
0
1
1
0
1
0
1
Reserved
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.7 Extend Mode Register Set (EMRS) Timing
CLK
CLK
tMRD
CMD
ADD
EMRS
NEXT CMD
Register Set data
DLL Switch
A0
0
A0
DLL Switch
Enable
Disable
1
A1
A2
Buffer Strength
"0 "
A3
A4
A5
A6
"0 "
"0 "
"0 "
A1
0
A6
0
Buffer Strength
Reserved
100% Strength
60% Strength
1
0
0
1
1
1
Reserved
30% Strength
Buffer Strength
A7
A8
A9
"0 "
"0 "
"0 "
BA0
BA1
0
MRS or EMRS
0
1
Regular MRS cycle
Extended MRS cycle
Reserved
0
0
1
1
1
A10
A11
"0 "
"0 "
A12 "0 "
BA0 "0 "
BA1 "0 "
Mode Register Set
or
Extended Mode
Register Set
*“Reserved＂should stay“0＂during EMRS cycle
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.8 Auto-precharge Timing (Read Cycle, CL = 2)
1) tRCD (READA) ≥ tRAS (MIN) – (BL/2) × tCK
tRAS
tRP
CLK
CLK
BL=2
ACT
READA
ACT
AP
CMD
DQS
DQ
Q0 Q1
BL=4
ACT
READA
AP
ACT
CMD
DQS
DQ
Q0 Q1 Q2 Q3
BL=8
READA
ACT
AP
ACT
CMD
DQS
DQ
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
Notes: CL=2 shown; same command operation timing with CL = 2,5 and CL=3
In this case, the internal precharge operation begin after BL/2 cycle from READA command.
AP
Represents the start of internal precharging.
The Read with Auto-precharge command cannot be interrupted by any other command.
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.9 Auto-precharge Timing (Read cycle, CL = 2), continued
2) tRCD/RAP(min) ≤ tRCD (READA) < tRAS (min) – (BL/2) × tCK
tRAS
tRP
CLK
CLK
BL=2
ACT
READA
ACT
AP
CMD
tRAP
tRCD
DQS
DQ
Q0 Q1
BL=4
ACT
READA
AP
ACT
CMD
DQS
DQ
tRAP
tRCD
Q0 Q1 Q2 Q3
BL=8
ACT
READA
AP
ACT
CMD
tRAP
tRCD
DQS
DQ
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
Notes: CL2 shown; same command operation timing with CL = 2.5, CL=3.
In this case, the internal precharge operation does not begin until after tRAS (min) has command.
AP
Represents the start of internal precharging.
The Read with Auto-precharge command cannot be interrupted by any other command.
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.10 Auto-precharge Timing (Write Cycle)
CLK
CLK
tDAL
BL=2
WRITA
AP
ACT
CMD
DQS
DQ
D0 D1
tDAL
AP
BL=4
WRITA
ACT
CMD
DQS
DQ
D0 D1 D2 D3
tDAL
AP
BL=8
WRITA
ACT
CMD
DQS
DQ
D0 D1 D2 D3 D4 D5 D6 D7
The Write with Auto-precharge command cannot be interrupted by any other command.
AP
Represents the start of internal precharging.
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8)
11.12 Burst Read Stop (BL = 8)
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.13 Read Interrupted by Write & BST (BL = 8)
Burst Read cycle must be terminated by BST Command to avoid I/O conflict.
11.14 Read Interrupted by Precharge (BL = 8)
CLK
CLK
CMD
READ
PRE
CAS Latency = 2
DQS
CAS Latency
DQ
Q0
Q1
Q2
Q3
Q4
Q5
CAS Latency = 3
DQS
CAS Latency
DQ
Q0
Q1
Q2
Q3
Q4
Q5
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.15 Write Interrupted by Write (BL = 2, 4, 8)
11.16 Write Interrupted by Read (CL = 2, BL = 8)
CLK
CLK
WRIT
READ
CMD
DQS
DM
tWTR
D3
D0
D1
D2
D4
D5
D6
D7
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
DQ
Data must be
masked by DM
Data masked by READ command,
DQS input ignored.
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.17 Write Interrupted by Read (CL = 3, BL = 4)
CLK
CLK
CMD
DQS
WRIT
READ
DM
DQ
tWTR
D3
D0
D1
D2
Q0
Q1
Q2
Q3
Data must be masked by DM
11.18 Write Interrupted by Precharge (BL = 8)
CLK
CLK
CMD
DQS
WRIT
PRE
ACT
tWR
tRP
DM
DQ
D0
D1
D2
D3
D4
D5
D6
D7
Data must be
masked by DM
Data masked by PRE
command, DQS input ignored.
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.19 2 Bank Interleave Read Operation (CL = 2, BL = 2)
CLK
CLK
tRC(b)
tRC(a)
tRRD
tRRD
ACTa
ACTb
READAa
READAb
tRP(a)
ACTa
ACTb
CMD
tRCD(a)
tRAS(a)
tRCD(b)
tRAS(b)
tRP(b)
DQS
DQ
Preamble
CL(a)
Postamble
CL(b)
Preamble
Postamble
Q0a Q1a
Q0b Q1b
ACTa/b
: Bank Act. CMD of bank a/b
READAa/b : Read with Auto Pre.CMD of bank a/b
APa/b : Auto Pre. of bank a/b
APa
APb
11.20 2 Bank Interleave Read Operation (CL = 2, BL = 4)
CLK
CLK
tRC(b)
tRC(a)
tRRD
tRRD
CMD
ACTa
ACTb
READAa
READAb
ACTa
ACTb
tRCD(a)
tRP(a)
tRAS(a)
tRCD(b)
tRP(b)
tRAS(b)
DQS
DQ
Preamble
CL(a)
Postamble
CL(b)
Q0a Q1a Q2a Q3a Q0b Q1b Q2b Q3b
ACTa/b
: Bank Act. CMD of bank a/b
READAa/b : Read with Auto Pre.CMD of bank a/b
APa/b : Auto Pre. of bank a/b
APb
APa
Publication Release Date: May 26, 2010
Revision A01
- 47 -
W9425G6JH
11.21 4 Bank Interleave Read Operation (CL = 2, BL = 2)
CLK
CLK
tRC(a)
tRRD
tRRD
tRRD
tRRD
CMD
ACTa
ACTb
ACTc
READAa
ACTd
READAb
ACTa
READAc
tRCD(a)
tRAS(a)
tRP
tRCD(b)
tRAS(b)
tRCD(c)
tRAS(c)
tRCD(d)
tRAS(d)
DQS
DQ
Preamble
Postamble Preamble
CL(b)
CL(a)
Q0a Q1a
Q0b Q1b
ACTa/b/c/d
: Bank Act. CMD of bank a/b/c/d
READAa/b/c/d : Read with Auto Pre.CMD of bank a/b/c/d
APa/b/c/d : Auto Pre. of bank a/b/c/d
APa
APb
11.22 4 Bank Interleave Read Operation (CL = 2, BL = 4)
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.23 Auto Refresh Cycle
Note: CKE has to be kept “High” level for Auto-Refresh cycle.
11.24 Precharged/Active Power Down Mode Entry and Exit Timing
Note:
1. If power down occurs when all banks are idle, this mode is referred to as precharge power down.
2. If power down occurs when there is a row active in any bank, this mode is referred to as active power down.
11.25 Input Clock Frequency Change during Precharge Power Down Mode Timing
CLK
CLK
DLL
RESET
NOP
NOP
NOP
tIS
NOP
NOP
CMD
CMD
CKE
Frequency Change
Occurs here
200 clocks
tRP
Stable new clock
before power down exit
Minmum 2 clocks
required before
changing frequency
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
11.26 Self Refresh Entry and Exit Timing
Note: If the clock frequency is changed during self refresh mode, a DLL reset is required upon exit.
Publication Release Date: May 26, 2010
Revision A01
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W9425G6JH
12. PACKAGE SPECIFICATION
12.1 TSOP 66 lI – 400 mil
E1
E
D
O 1
O
L
L1
O
O 1
Publication Release Date: May 26, 2010
Revision A01
- 51 -
W9425G6JH
13. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
Initial formally data sheet
A01
May 26, 2010
All
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
Publication Release Date: May 26, 2010
- 52 -
Revision A01
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