BC347 [WINNERJOIN]
TRANSISTOR (NPN); 晶体管( NPN )型号: | BC347 |
厂家: | SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
描述: | TRANSISTOR (NPN) |
文件: | 总1页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
BC347
BC347 TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
1. EMITTER
2. BASE
PCM:
0.3
W (Tamb=25℃)
Collector current
ICM:
3. COLLECTOR
0.1
50
A
V
Collector-base voltage
1 2 3
V(BR)CBO
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA, IE=0
IC= 1mA , IB=0
MIN
50
45
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
IE= 100µA, IC=0
VCB=50V, IE=0
V
0.1
µA
µA
µA
Collector cut-off current
ICEO
VCE=35V, IB=0
0.1
0.1
450
0.3
1
Emitter cut-off current
IEBO
VEB= 3V, IC=0
DC current gain
hFE
VCE=5 V, IC= 2mA
IC= 10mA, IB= 1mA
IC= 10mA, IB= 1mA
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCEsat
VBEsat
V
V
V
CE=5V, IC=10mA,
Transition frequency
125
MHz
fT
f=30MHz
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
相关型号:
BC352
Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
MICRO-ELECTRO
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