MMST5401 [WINNERJOIN]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | MMST5401 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总1页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MMST5401
SOT-323
MMST5401 TRANSISTOR (PNP)
1. BASE
2. EMITTER
FEATURES
1. 25¡ À0. 05
3. COLLECTOR
Power dissipation
PCM:
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
ICM:
-0.2
A
V
Collector-base voltage
V(BR)CBO
:
-160
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
MIN
-160
-150
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=-10µA, IC=0
nA
nA
VCB=-120V, IE=0
-50
-50
IEBO
Emitter cut-off current
VEB=-3V, IC=0
hFE(1)
V
CE=-5V, IC=-1mA
50
60
50
DC current gain
hFE(2)
V
CE=-5V, IC=-10mA
CE=-5V, IC=-50mA
240
hFE(3)
V
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.2
-0.5
-1
Collector-emitter saturation voltage
Base-emitter voltage
V
IC=-10mA, IB=-1mA
V
IC=-50mA, IB=-5mA
-1
100
300
6
MHz
pF
Transition frequency
VCE=-10V, IC=-10mA, f=100MHz
Cob
Collector output capacitance
V
CB=-10V, IE=0, f=1MHz
V
CE=-5V, Ic=-0.2mA,
WEJ ELECNFTRONIC CO.,LTdB D
8
Noise figure
f=1KHZ, Rg=10Ω
Marking
K4M
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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