AP512-PCB [WJCI]

UMTS-band 8W HBT Amplifier Module; UMTS波段8W HBT功率放大器模块


型号：	AP512-PCB
厂家：	WJ COMMUNICATION. INC.
描述：	UMTS-band 8W HBT Amplifier Module UMTS波段8W HBT功率放大器模块放大器功率放大器
文件：	总5页 (文件大小：267K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

The Communications Edge ^TM

AP512

UMTS-band 8W HBT Amplifier Module

Product Information

Product Features

Product Description

Functional Diagram

The AP512 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package. The multi-stage

amplifier module has 28.5 dB gain, while being able to

achieve high performance for UMTS-band applications with

+39 dBm of compressed 1dB power. The module has been

internally optimized for linearity to provide -55 dBc ALCR

at 28 dBm power for W-CDMA applications.

• 2110 – 2170 MHz

• 28.5 dB Gain

• -55 dBc ACLR

@ 28 dBm W-CDMA linear power

• +39 dBm P1dB

• +12 V Single Supply

• Power Down Mode

Top View

The AP512 uses a high reliability InGaP/GaAs HBT process

technology and does not require any external matching

components. The module operates off of a +12V supply and

does not requiring any negative biasing voltages; an internal

active bias allows the amplifier to maintain high linearity

over temperature. It has the added feature of a +5V power

down control pin. A low-cost metal housing allows the

device to have a low thermal resistance and achieves over

100 years MTTF. All devices are 100% RF and DC tested.

Pin No.

2 / 4

3 / 5

Function

RF Output

Vcc

Vpd

RF Input

Ground

• Bias Current Adjustable

• RoHS-complaint flange-mount pkg

Case

Applications

• Final stage amplifiers for Repeaters

• Optimized for driver amplifier PA

mobile infrastructure

The AP512 is targeted for use as a driver or final stage

amplifier in wireless infrastructure where high linearity and

high power is required. This combination makes the device an

excellent candidate for next generation multi-carrier 3G base

stations or repeaters using the UMTS frequency band.

Specifications ⁽¹⁾

Parameter

Operational Bandwidth

Units Min Typ Max Test Conditions

MHz

dBc

2110 – 2170

2140

-55

Test Frequency

Adjacent Channel Leakage Ratio

Power Gain

Input Return Loss

Output Return Loss

Output P1dB

-50

W-CDMA +28 dBm Total Power, ±5 MHz offset

Pout = +28 dBm

28.5

dBm

+39

+53

1.72

1.69

+12

Output IP3

Pout = +28 dBm/tone, Δf = 1 MHz

Pout = +28 dBm

Operating Current ⁽²⁾

Quiescent Current, Icq ⁽²⁾

Device Voltage, Vcc

Device Voltage, Vpd ⁽³⁾

Ruggedness

VSWR

1.55

10:1

1.80

Pull-down voltage: 0V = “OFF”, 5V=”ON”

Pout = +39 dBm CW, all phases

1. Test conditions unless otherwise noted: 25ºC.

2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).

Absolute Maximum Rating

Ordering Information

Parameter

Rating

Operating Case Temperature

Storage Temperature

-40 to +85 °C

-55 to +150 °C

Part No.

AP512

Description

UMTS-band 8W HBT Amplifier Module

Fully-Assembled Evaluation Board

RF Input Power (continuous)

+10 dBm

WCDMA signal (3GPP Test Model 1+ 32 DPCH)

AP512-PCB

Operation of this device above any of these parameters may cause permanent damage.

Specifications and information are subject to change without notice

Page 1 of 5 June 2006

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

The Communications Edge ^TM

AP512

UMTS-band 8W HBT Amplifier Module

Product Information

Class AB Configuration (AP512-PCB)

The AP512-PCB and AP512 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for

the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the

amplifier module, as described on the next page.

10μF

DNP

0Ω

DNP

100pF

.01μF

DNP

.01μF

100pF

Notes:

1. Please note that for reliable operation, the evaluation board and

mounting plate will have to be attached to a much larger heat sink

during operation and in laboratory environments to dissipate the

power consumed by the device. The use of a convection fan is also

recommended in laboratory environments. Details of the mounting holes

used in the WJ mounting plate are given on the last page of this datasheet.

2. The area around the module underneath the PCB should not contain any

soldermask in order to maintain good RF grounding.

3. For proper and safe operation in the laboratory, the power-on sequencing

should be followed:

RF IN

RF OUT

DNP

0Ω

DNP

1. Connect RF In and Out

2. Connect the voltages and ground pins as shown in the circuit.

3. Apply the RF signal

4. Power down with the reverse sequence

Specifications and information are subject to change without notice

Page 2 of 5 June 2006

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

The Communications Edge ^TM

AP512

UMTS-band 8W HBT Amplifier Module

Product Information

Performance Graphs (AP512-PCB)

Gain vs. Output Power

Vcc=12V, Icq=1.7A, 25 °C

Vcc=12V, Icq=1.7A, 2140 MHz

2110MHz

2140MHz

2170MHz

-40 °C

+25 °C

+85 °C

Output Power (dBm)

ACLR vs. Output Power

W-CDMA 3GPP Test Model 1+32, Δf=±5 MHz, Vcc=12V, Icq=1.7A, 25 °C

W-CDMA 3GPP Test Model 1+32, Δf=±5 MHz, Vcc=12V, Icq=1.7A, 2140 MHz

-40

-45

-50

-55

-60

2110MHz

2140MHz

2170MHz

-40 °C

+25 °C

+85 °C

-45

-50

-55

-60

Average Output Power (dBm)

PAE vs. Output Power

Icc vs. Output Power

Vcc=12V, Icq=1.7A, 25 °C

W-CDMA 3GPP Test Model 1+32, 2140 MHz, Vcc=12V, Icq=1.7A

Vcc=12V, 2140 MHz

2.0

1.9

1.8

1.7

1.6

1.5

2110MHz

2140MHz

2170MHz

-40 °C

+25 °C

+85 °C

-40 °C

+25 °C

+85 °C

Output Power (dBm)

Specifications and information are subject to change without notice

Page 3 of 5 June 2006

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

The Communications Edge ^TM

AP512

UMTS-band 8W HBT Amplifier Module

Product Information

MTTF Calculation

The MTTF of the AP512 can be calculated by first To calculate the MTTF for the module, the junction

determining how much power is being dissipated by the temperature needs to be determined. This can be easily

amplifier module. Because the device’s intended application calculated with the module’s power dissipation, the thermal

is to be a power amplifier pre-driver or final stage output resistance value, and the case temperature of operation:

amplifier, the output RF power of the amplifier will help

lower the overall power dissipation. In addition, the

amplifier can be biased with different quiescent currents, so

the calculation of the MTTF is custom to each application.

T_j= P_diss* R_th+ T_case

T_j= Junction temperature

_diss= Power dissipation (calculated from above)

R_th= Thermal resistance = 4.5 ˚C/W

T_case= Case temperature of module’s heat sink

The power dissipation of the device can be calculated with

the following equation:

From a numerical standpoint, the MTTF can be calculated

using the Arrhenius equation:

_diss= V_cc* I_cc– (Output RF Power – Input RF Power),

V_cc= Operating supply voltage = 12V

I_cc= Operating current

MTTF = A* e^(Ea/k/Tj)

A = Pre-exponential Factor = 6.087 x 10^-11hours

Ea = Activation Energy = 1.39 eV

{The RF power is converted to Watts}

k = Boltzmann’s Constant = 8.617 x 10^-5eV/ ºK

T_j= Junction Temperature (ºK) = T_j(ºC) + 273

While the maximum recommended case temperature on the

datasheet is listed at 85 ˚C, it is suggested that customers

maintain an MTTF above 1 million hours. This would

convert to a derating curve for maximum case temperature vs.

power dissipation as shown in the plot below.

A graphical view of the MTTF can be shown in the plot

below.

MTTF vs. Junction Temperature

Maximum Recommended Case Temperature vs. Power Dissipation

1.E+07

to maintain 1 million hours MTTF

1.E+06

1.E+05

130

140

150

160

170

180

Junction Temperature (°C)

Power Dissipation (Watts)

Specifications and information are subject to change without notice

Page 4 of 5 June 2006

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

The Communications Edge ^TM

AP512

UMTS-band 8W HBT Amplifier Module

Product Information

Outline Drawing

AP512

Product Marking

The device will be marked with an “AP512” designator

with an alphanumeric lot code on the top surface of the

Outline Drawing for the Heatsink Shipped

with the WJ Evaluation Board

package noted as “ABCD” on the drawing.

manufacturing date will also be printed as “XXYY”, where

the “XX” represents the week number from 1 – 52.

The product will be shipped in tubes in multiples of 15.

ESD / MSL Information

ESD Rating: Class 1C

Value:

Test:

Passes at ≥ 1,000 to < 2,000 volts

Human Body Model (HBM)

Standard:

JEDEC Standard JESD22-A114

ESD Rating: Class III

Value:

Test:

Standard:

Passes ≥ 500 to < 1,000 volts

Charged Device Model (CDM)

JEDEC Standard JESD22-C101

The supplied mounting plate with the evaluation board should be mounted and attached to a larger heatsink for proper thermal

operation in a laboratory environment.

Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 5 of 5 June 2006

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