SCG002_07 [WJCI]

InGaP HBT Gain Block; 的InGaP HBT增益模块
SCG002_07
型号: SCG002_07
厂家: WJ COMMUNICATION. INC.    WJ COMMUNICATION. INC.
描述:

InGaP HBT Gain Block
的InGaP HBT增益模块

文件: 总4页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SCG002  
InGaP HBT Gain Block  
Product Features  
Product Description  
Functional Diagram  
GND  
The SCG002 is a general-purpose buffer amplifier that  
offers high dynamic range in a low-cost surface-mount  
package. At 1000 MHz, the SCG002 typically provides 21  
dB of gain, +29 dBm Output IP3, and +15.5 dBm P1dB.  
DC – 6 GHz  
4
+15.5 dBm P1dB at 1 GHz  
+29 dBm OIP3 at 1 GHz  
21 dB Gain at 1 GHz  
3.8 dB Noise Figure  
The SCG002 consists of Darlington pair amplifiers using  
the high reliability InGaP/GaAs HBT process technology  
and only requires DC-blocking capacitors, a bias resistor,  
and an inductive RF choke for operation. The device is  
ideal for wireless applications and is housed in a lead-  
free/green/RoHS-compliant SOT-89 SMT package. All  
devices are 100% RF and DC tested.  
1
2
3
Available in Lead-free / green  
SOT-89 Package Style  
RF IN  
GND  
RF OUT  
Internally matched to 50 Ω  
Function  
Pin No.  
Input  
1
3
Output/Bias  
Ground  
Applications  
The broadband MMIC amplifier can be directly applied to  
various current and next generation wireless technologies  
such as GPRS, GSM, CDMA, and W-CDMA. In addition,  
the SCG002 will work for other various applications within  
the DC to 6 GHz frequency range such as CATV and  
mobile wireless.  
2, 4  
Mobile Infrastructure  
CATV / FTTX  
W-LAN / ISM  
RFID  
WiMAX / WiBro  
Specifications (1)  
Typical Performance (1)  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Units Min Typ Max  
Parameter  
Frequency  
Units  
MHz  
Typical  
MHz  
MHz  
dB  
DC  
6000  
500  
21.6  
-17  
900  
1900  
20.5  
-15  
2140  
S21  
dB  
dB  
21  
19.7  
-14.5  
-21  
1000  
21  
S11  
-17  
-18  
S22  
dB  
-18  
-21  
Output P1dB  
Output IP3 (2)  
Test Frequency  
Gain  
dBm  
dBm  
MHz  
dB  
+15.5  
+29  
2000  
20  
Output P1dB  
Output IP3 (2)  
Noise Figure  
dBm  
dBm  
dB  
+15.8 +15.5  
+15  
+29  
3.8  
+14.9  
+29  
+28  
3.8  
+29  
3.7  
3.8  
19  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (2)  
Noise Figure  
Device Voltage  
Device Current  
dB  
14  
dB  
20  
dBm  
dBm  
dB  
+15  
+29  
3.8  
V
3.5  
3.9  
4.3  
mA  
45  
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +5 V, Rbias = 24 , 50 system.  
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
Absolute Maximum Rating  
Parameter  
Rating  
Ordering Information  
Operating Case Temperature  
Storage Temperature  
Device Current  
RF Input Power (continuous)  
Junction Temperature  
-40 to +85 °C  
-55 to +150 °C  
150 mA  
Part No.  
Description  
InGaP HBT Gain Block  
(lead-free/green/RoHS-compliant SOT-89 package)  
SCG002B-G  
SCG002B-PCB  
+12 dBm  
700 –2400 MHz Fully Assembled Eval. Board  
+250 °C  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Page 1 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  
SCG002  
InGaP HBT Gain Block  
Typical Device RF Performance  
Supply Bias = +5 V, Rbias = 24 , Icc = 45 mA  
Frequency  
S21  
MHz  
dB  
100  
22  
500  
21.6  
-17  
900  
21  
1900  
20.5  
-15  
2140  
19.7  
-15  
2400  
19.2  
-15  
3500  
17.4  
-16  
5800  
14.3  
-19  
S11  
dB  
-18  
-16  
-18  
S22  
dB  
-16.7  
-17  
-20  
-21  
-22  
-35  
-16  
Output P1dB  
Output IP3  
Noise Figure  
dBm  
dBm  
dB  
+15.4 +15.6 +15.5  
+15  
+29  
3.8  
+15  
+29  
3.8  
+15  
+29  
3.9  
+14.5  
+11  
+28  
3.9  
+28  
3.8  
+29  
3.8  
1. Test conditions: T = 25 ºC, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24 , Icc = 45 mA typical, 50 System.  
2. 3OIP measured with two tones at an output power of -1 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.  
Gain vs. Frequency  
S11, S22 vs. Frequency  
Vde vs. Icc  
120  
100  
80  
60  
40  
20  
0
22  
20  
18  
16  
14  
12  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
S11  
+25C  
S22  
+25C -40C +85C  
0
1
2
3
4
5
6
0.0  
1.0  
2.0  
Vde (V)  
3.0  
4.0  
5.0  
500  
1000  
1500 2000  
Frequency (MHz)  
2500  
3000  
Frequency (GHz)  
OIP3 vs. Frequency  
Noise Figure vs. Frequency  
P1dB vs. Frequency  
32  
30  
28  
26  
24  
4.5  
20  
4
3.5  
3
18  
16  
14  
12  
10  
2.5  
2
+25C -40C +85C  
+25C -40C +85C  
500  
1000  
1500  
2000  
500  
1000  
1500 2000  
Frequency (MHz)  
2500  
3000  
500  
1000  
1500 2000  
Frequency (MHz)  
2500  
3000  
Frequency (MHz)  
Typical Device S-Parameters  
S-Parameters (Vdevice = +3.9 V, ICC = 45 mA, T = 25 °C, calibrated to device leads)  
Freq (MHz)  
50  
S11 (dB)  
-33.66  
-25.70  
-22.88  
-20.95  
-21.62  
-22.23  
-21.00  
-20.58  
-22.29  
-24.96  
-38.73  
-27.75  
-22.85  
S11 (ang)  
160.38  
57.47  
S21 (dB)  
22.12  
21.92  
21.40  
20.67  
19.85  
19.15  
18.29  
17.55  
16.72  
15.98  
15.29  
14.67  
14.12  
S21 (ang)  
177.97  
160.79  
142.72  
126.57  
111.46  
99.29  
S12 (dB)  
-23.51  
-23.66  
-23.41  
-23.49  
-23.03  
-23.10  
-22.58  
-22.06  
-21.59  
-20.86  
-20.66  
-19.86  
-19.66  
S12 (ang)  
-0.74  
0.45  
S22 (dB)  
S22 (ang)  
-42.92  
-25.55  
-22.04  
-16.66  
-14.30  
-15.12  
-13.92  
-12.97  
-11.90  
-10.64  
-9.87  
-10.61  
-59.74  
500  
1000  
1500  
2000  
2500  
3000  
3500  
4000  
4500  
5000  
5500  
6000  
73.66  
0.69  
-132.34  
-164.52  
-178.04  
-177.70  
170.72  
153.21  
137.74  
126.68  
121.15  
119.72  
122.34  
88.39  
1.82  
77.79  
2.10  
25.60  
1.10  
16.65  
86.85  
2.16  
10.75  
74.67  
0.98  
4.19  
62.69  
-1.56  
-5.93  
-8.63  
-10.67  
-12.11  
19.24  
51.73  
11.58  
41.78  
-158.73  
-167.85  
32.60  
-10.03  
-10.68  
23.12  
Device S-parameters are available for download off of the website at: http://www.wj.com  
Specifications and information are subject to change without notice  
Page 2 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  
SCG002  
InGaP HBT Gain Block  
Recommended Application Circuit  
Vcc  
Icc = 45 mA  
SCG002B-PCB  
R4  
Bias  
Resistor  
C4  
Bypass  
Capacitor  
C3  
0.018 µF  
L1  
RF Choke  
RF IN  
RF OUT  
SCG002B  
C2  
Blocking  
Capacitor  
C1  
Blocking  
Capacitor  
Recommended Component Values  
Recommended Bias Resistor Values  
Reference  
Designator  
L1  
Frequency (MHz)  
Supply  
Voltage  
5 V  
R1 value  
Size  
50  
500  
900  
1900  
27 nH  
68 pF  
2200  
22 nH  
68 pF  
2500  
18 nH  
56 pF  
3500  
15 nH  
39 pF  
820 nH  
.018 µF  
220 nH  
1000 pF  
68 nH  
100 pF  
24.4 ohms  
46.7 ohms  
91 ohms  
0805  
0805  
1210  
1210  
2010  
2010  
C1, C2, C4  
6 V  
8 V  
1. The proper values for the components are dependent upon the intended frequency of operation.  
2. The following values are contained on the evaluation board to achieve optimal broadband performance:  
9 V  
113 ohms  
136 ohms  
180 ohms  
10 V  
12 V  
Ref. Desig.  
L1  
Value / Type  
Size  
39 nH wirewound inductor  
56 pF chip capacitor  
0.018 µF chip capacitor  
Do Not Place  
0603  
0603  
0603  
C1, C2  
C3  
The proper value for R1 is dependent upon the supply  
voltage and allows for bias stability over temperature.  
WJ recommends a minimum supply bias of +5 V.  
1% tolerance resistor is recommended.  
A
C4  
R4  
0805  
241% tolerance  
Specifications and information are subject to change without notice  
Page 3 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  
SCG002  
InGaP HBT Gain Block  
SCG002B-G Mechanical Information  
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free  
(maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.  
Outline Drawing  
Product Marking  
The component will be marked with an  
“S002G” designator with an alphanumeric lot  
code on the top surface of the package. The  
obsolete tin-lead package is marked with an  
“S002” designator followed by an  
alphanumeric lot code.  
Tape and reel specifications for this part are  
located on the website in the “Application  
Notes” section.  
MSL / ESD Rating  
Land Pattern  
ESD Rating: Class 1A  
Value:  
Test:  
Standard:  
Passes between 250 and 500V  
Human Body Model (HBM)  
JEDEC Standard JESD22-A114  
MSL Rating: Level 3 at +260 °C convection reflow  
Standard: JEDEC Standard J-STD-020  
Mounting Config. Notes  
1. Ground / thermal vias are critical for the proper performance of  
this device. Vias should use a .35mm (#80 / .0135”) diameter  
drill and have a final plated thru diameter of .25 mm (.010”).  
2. Add as much copper as possible to inner and outer layers near  
the part to ensure optimal thermal performance.  
3. Mounting screws can be added near the part to fasten the board  
to a heatsink. Ensure that the ground / thermal via region  
contacts the heatsink.  
4. Do not put solder mask on the backside of the PC board in the  
region where the board contacts the heatsink.  
5. RF trace width depends upon the PC board material and  
construction.  
6. Use 1 oz. Copper minimum.  
7. All dimensions are in millimeters (inches). Angles are in  
degrees.  
Thermal Specifications  
Parameter  
Operating Case Temperature  
Rating  
-40 to +85 °C  
Thermal Resistance, Rth  
131 °C/W  
Specifications and information are subject to change without notice  
Page 4 of 4 April 2007  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  

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