BY133 [WTE]

1.0A SILICON RECTIFIER; 1.0A硅整流
BY133
型号: BY133
厂家: WON-TOP ELECTRONICS    WON-TOP ELECTRONICS
描述:

1.0A SILICON RECTIFIER
1.0A硅整流

整流二极管 IOT
文件: 总3页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WTE  
PO WER SEM ICONDUCTORS  
BY133  
1.0A SILICON RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: Molded Plastic  
D
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
Mounting Position: Any  
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
!
!
!
!
B
5.21  
0.864  
2.72  
C
Marking: Type Number  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
BY133  
Unit  
VRRM  
VRWM  
VR  
1300  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
910  
1.0  
V
A
Average Rectified Output Current (Note 1)  
@TA = 75°C  
Non-Repetitive Peak Forward Surge Current 8.3ms Single  
half sine-wave superimposed on rated load (JEDEC Method)  
IFSM  
VFM  
IRM  
30  
A
V
Forward Voltage  
@IF = 1.0A  
1.0  
Peak Reverse Current  
@TA = 25°C  
5.0  
50  
µA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 2)  
Cj  
RJA  
Tj  
15  
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating Temperature Range  
50  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
°C  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
BY133  
1 of 3  
© 2002 Won-Top Electronics  
1.0  
0.8  
10  
1.0  
0.6  
0.4  
0.2  
0
0.1  
Tj = 25ºC  
PULSE WIDTH = 300µs  
2% DUTY CYCLE  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
40  
60  
80  
100 120 140 160 180  
TA, AMBIENT TEMPERATURE (ºC)  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
Fig. 1 Forward Current Derating Curve  
50  
40  
30  
100  
Tj = 25ºC  
f = 1MHz  
10  
20  
10  
0
8.3ms Single half sine-wave  
JEDEC Method  
1.0  
1.0  
10  
100  
1.0  
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
Fig. 4 Typical Junction Capacitance  
BY133  
2 of 3  
© 2002 Won-Top Electronics  
ORDERING INFORMATION  
Product No.!  
BY133-T3  
Package Type  
Shipping Quantity  
DO-41  
DO-41  
DO-41  
5000/Tape & Reel  
5000/Tape & Box  
1000 Units/Box  
BY133-TB  
BY133  
Products listed in  
are WTE  
devices.  
Preferred  
bold  
!T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.  
Shipping quantity given is for minimum packing quantity only. For minimum order  
quantity, please consult the Sales Department.  
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any  
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to  
manufacturer. WTE reserves the right to change any or all information herein without further notice.  
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life  
WARNING  
support devices or systems without the express written approval.  
Won-Top Electronics Co., Ltd.  
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan  
Phone: 886-7-822-5408 or 886-7-822-5410  
Fax: 886-7-822-5417  
Email: sales@wontop.com  
Internet: http://www.wontop.com  
Wepoweryoureveryday.  
BY133  
3 of 3  
© 2002 Won-Top Electronics  

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